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D. Allen

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2 published item(s)

preprint2013arXiv

Periodicity and perfect state transfer in quantum walks on variants of cycles

We systematically investigated perfect state transfer between antipodal nodes of discrete time quantum walks on variants of the cycles C_4, C_6 and C_8 for three choices of coin operator. Perfect state transfer was found, in general, to be very rare, only being preserved for a very small number of ways of modifying the cycles. We observed that some of our useful modifications of C_4 could be generalised to an arbitrary number of nodes, and present three families of graphs which admit quantum walks with interesting dynamics either in the continuous time walk, or in the discrete time walk for appropriate selections of coin and initial conditions. These dynamics are either periodicity, perfect state transfer, or very high fidelity state transfer. These families are modifications of families known not to exhibit periodicity or perfect state transfer in general. The robustness of the dynamics is tested by varying the initial state, interpolating between structures and by adding decoherence.

preprint2012arXiv

Three Dimensionial Surface Modelling: A Novel Analysis Technique for Non-Destructive X-Ray Diffraction Imaging of Semiconductor Die Warpage & Strain in Fully Encapsulated Integrated Circuits

Future complementary metal oxide semiconductor (CMOS) scaling for advanced integrated circuit (IC) technologies may well depend on "More than Moore" (MtM) approaches using heterogeneous integration of semiconductor-based devices. In order to realise this, advanced packaging technologies including System in Package (SiP), System on Chip (SoC) and 3D Integrated Circuits (3D ICs) are key enabling technologies. However, these advanced packages are plagued by reliability problems and to date there is no proven or accepted non-destructive metrology which can simultaneously probe materials properties such as strain, warpage, dislocation generation, etc. in these systems from bare silicon die through to a fully encapsulated packaged system. We report herein on the development of a novel, x-ray diffraction amd analysis technique, which can address this major metrology gap, and we demonstrate the non-destructive production of X-Y spatial maps of deformations and strain fields in Si die inside fully encapsulated integrated circuit packages. The technique, which we call 3-dimensional surface modelling (3DSM), is used to obtain high resolution (~3 μm) strain/warpage maps, and quantitative information on the nature and extent of warpage in a demonstration quad no flat lead (QFN) advanced package running from early stage silicon die bonding through to the end of the manufacturing process, i.e. a fully encapsulated and production ready chip.