Researcher profile

Cyril P. Opeil

Cyril P. Opeil contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate

Trust snapshot

Quick read

Trust 13 - Baseline
2works
0followers
1topics
4close collaborators

Actions

Decide how to stay connected

Follow researcher0

Research graph

See the researcher in context

Open full explorer

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this graph slice

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

2 published item(s)

preprint2014arXiv

Anomalous CDW ground state in Cu$_2$Se: a wave-like fluctuation of $\it{dc}$ I-V curve near 50 K

A charge density wave (CDW) ground state is observed in polycrystalline Cu$_2$Se below 125 K, which corresponds to an energy gap of 40.9 meV and an electron-phonon coupling constant of 0.6. Due to the polycrystalline structure, the Peierls transition process has been expanded to a wide temperature range from 90 to 160 K. The Hall carrier concentration shows a continuous decrease from 2.1$\times$10$^{20}$ to 1.6$\times$10$^{20}$ cm$^{-3}$ in the temperature range from 160 K to 80 K, while almost unchanged above 160 K and below 90 K. After entering the CDW ground state, a wave-like fluctuation was observed in the I-V curve near 50 K, which exhibits as a periodic negative differential resistivity in an applied electric field due to the current. We also investigated the doping effect of Zn, Ni, and Te on the CDW ground state. Both Zn and Ni doped Cu$_2$Se show a CDW character with increased energy gap and electron-phonon coupling constant, but no notable Peierls transition was observed in Te doped Cu$_2$Se. Similar wave-like I-V curve was also seen in Cu$_{1.98}$Zn$_{0.02}$Se near 40 K. The regular fluctuation in $\it{dc}$ I-V curve was not magnetic field sensitive, but temperature and sample size sensitive.

preprint2012arXiv

Transport Properties of Ni, Co, Fe, Mn Doped Cu0.01Bi2Te2.7Se0.3 for Thermoelectric Device Applications

Bi2Te3 based thermoelectric devices typically use a nickel layer as a diffusion barrier to block the diffusion of solder or copper atoms from the electrode into the thermoelectric material. Previous studies have shown degradation in the efficiency of these thermoelectric devices may be due to the diffusion of the barrier layer into the thermoelectric material. In this work Ni, Co, Fe, and Mn are intentionally doped into Cu0.01Bi2Te2.7Se0.3 in order to understand their effects on the thermoelectric material. Thermoelectric transport properties including the Seebeck coefficient, thermal conductivity, electrical resistivity, carrier concentration, and carrier mobility of Cu0.01Bi2Te2.7Se0.3 doped with 2 atomic percent M (M=Ni, Co, Fe, Mn) as Cu0.01Bi2Te2.7Se0.3M0.02, are studied in a temperature range of 5-525 K.