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Cyril P. Opeil

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2 publications

preprint2014arXiv

Anomalous CDW ground state in Cu2_2Se: a wave-like fluctuation of dc\it{dc} I-V curve near 50 K

A charge density wave (CDW) ground state is observed in polycrystalline Cu2_2Se below 125 K, which corresponds to an energy gap of 40.9 meV and an electron-phonon coupling constant of 0.6. Due to the polycrystalline structure, the Peierls transition process has been expanded to a wide temperature range from 90 to 160 K. The Hall carrier concentration shows a continuous decrease from 2.1×\times1020^{20} to 1.6×\times1020^{20} cm−3^{-3} in the temperature range from 160 K to 80 K, while almost unchanged above 160 K and below 90 K. After entering the CDW ground state, a wave-like fluctuation was observed in the I-V curve near 50 K, which exhibits as a periodic negative differential resistivity in an applied electric field due to the current. We also investigated the doping effect of Zn, Ni, and Te on the CDW ground state. Both Zn and Ni doped Cu2_2Se show a CDW character with increased energy gap and electron-phonon coupling constant, but no notable Peierls transition was observed in Te doped Cu2_2Se. Similar wave-like I-V curve was also seen in Cu1.98_{1.98}Zn0.02_{0.02}Se near 40 K. The regular fluctuation in dc\it{dc} I-V curve was not magnetic field sensitive, but temperature and sample size sensitive.

preprint2012arXiv

Transport Properties of Ni, Co, Fe, Mn Doped Cu0.01Bi2Te2.7Se0.3 for Thermoelectric Device Applications

Bi2Te3 based thermoelectric devices typically use a nickel layer as a diffusion barrier to block the diffusion of solder or copper atoms from the electrode into the thermoelectric material. Previous studies have shown degradation in the efficiency of these thermoelectric devices may be due to the diffusion of the barrier layer into the thermoelectric material. In this work Ni, Co, Fe, and Mn are intentionally doped into Cu0.01Bi2Te2.7Se0.3 in order to understand their effects on the thermoelectric material. Thermoelectric transport properties including the Seebeck coefficient, thermal conductivity, electrical resistivity, carrier concentration, and carrier mobility of Cu0.01Bi2Te2.7Se0.3 doped with 2 atomic percent M (M=Ni, Co, Fe, Mn) as Cu0.01Bi2Te2.7Se0.3M0.02, are studied in a temperature range of 5-525 K.

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