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Researcher profile

Cristian Vaju

Cristian Vaju contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.str-elcond-mat.mtrl-sci

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Published work

2 published item(s)

preprint2013arXiv

Electric pulse induced electronic patchwork in the Mott insulator GaTa$_{4}$Se$_{8}$

Following a recent discovery of the Insulator-to-Metal Transition induced by electric field in GaTa$_{4}$Se$_{8}$, we performed a detailed Scanning Tunneling Microscopy/Spectroscopy study of both pristine (insulating) and transited (conducting) crystals of this narrow gap Mott insulator. The spectroscopic maps show that pristine samples are spatially homogeneous insulators while the transited samples reveal at nanometer scale a complex electronic pattern that consists of metallic and super-insulating patches immersed in the pristine insulating matrix. Surprisingly, both kinds of patches are accompanied by a strong local topographic inflation, thus evidencing for a strong electron-lattice coupling involved in this metal-insulator transition. Finally, using a strong electric field generated across the STM tunneling junction, we demonstrate the possibility to trig the metal-insulator transition locally even at room temperature.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Electric-Field-Induced Resistive Switching in a Family of Mott Insulators : towards Non-Volatile Mott-RRAM Memories

The fundamental building blocks of modern silicon-based microelectronics, such as double gate transistors in non-volatile Flash memories, are based on the control of electrical resistance by electrostatic charging. Flash memories could soon reach their miniaturization limits mostly because reliably keeping enough electrons in an always smaller cell size will become increasingly difficult . The control of electrical resistance at the nanometer scale therefore requires new concepts, and the ultimate resistance-change device is believed to exploit a purely electronic phase change such as the Mott insulator to insulator transition [2]. Here we show that application of short electric pulses allows to switch back and forth between an initial high-resistance insulating state ("0" state) and a low-resistance "metallic" state ("1" state) in the whole class of Mott Insulator compounds AM4X8 (A = Ga, Ge; M= V, Nb, Ta; X = S, Se). We found that electric fields as low as 2 kV/cm induce an electronic phase change in these compounds from a Mott insulating state to a metallic-like state. Our results suggest that this transition belongs to a new class of resistive switching and might be explained by recent theoretical works predicting that an insulator to metal transition can be achieved by a simple electric field in a Mott Insulator. This new type of resistive switching has potential to build up a new class of Resistive Random Access Memory (RRAM) with fast writing/erasing times (50 ns to 10 μs) and resistance ratios ΔR/R of the order of 25% at room temperature.

0 citations0 reviewsNo code linkedOpen access