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Conor Delaney

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Published work

3 published item(s)

preprint2020arXiv

Branching Quantum Convolutional Neural Networks

Neural network-based algorithms have garnered considerable attention in condensed matter physics for their ability to learn complex patterns from very high dimensional data sets towards classifying complex long-range patterns of entanglement and correlations in many-body quantum systems. Small-scale quantum computers are already showing potential gains in learning tasks on large quantum and very large classical data sets. A particularly interesting class of algorithms, the quantum convolutional neural networks (QCNN) could learn features of a quantum data set by performing a binary classification task on a nontrivial phase of quantum matter. Inspired by this promise, we present a generalization of QCNN, the branching quantum convolutional neural network, or bQCNN, with substantially higher expressibility. A key feature of bQCNN is that it leverages mid-circuit (intermediate) measurement results, realizable on current trapped-ion systems, obtained in pooling layers to determine which sets of parameters will be used in the subsequent convolutional layers of the circuit. This results in a branching structure, which allows for a greater number of trainable variational parameters in a given circuit depth. This is of particular use on current-day NISQ devices, where circuit depth is limited by gate noise. We present an overview of the ansatz structure and scaling, and provide evidence of its enhanced expressibility compared to QCNN. Using artificially-constructed large data sets of training states as a proof-of-concept we demonstrate the existence of training tasks in which bQCNN far outperforms an ordinary QCNN. Finally, we present future directions where the classical branching structure and increased density of trainable parameters in bQCNN would be particularly valuable.

preprint2013arXiv

Metal-Insulator Transition in Variably Doped (Bi1-xSbx)2Se3 Nanosheets

Topological insulators are novel quantum materials with metallic surface transport, but insulating bulk behavior. Often, topological insulators are dominated by bulk contributions due to defect induced bulk carriers, making it difficult to isolate the more interesting surface transport characteristics. Here, we report the synthesis and characterization of nanosheets of topological insulator Bi2Se3 with variable Sb-doping level to control the electron carrier density and surface transport behavior. (Bi1-xSbx)2Se3 thin films of thickness less than 10 nm are prepared by epitaxial growth on mica substrates in a vapor transport setup. The introduction of Sb in Bi2Se3 effectively suppresses the room temperature electron density from ~4 \times 10^13/cm^2 in pure Bi2Se3 (x = 0) to ~2 \times 10^12/cm^2 in (Bi1-xSbx)2Se3 at x ~0.15, while maintaining the metallic transport behavior. At x > ~0.20, a metal-insulator transition (MIT) is observed indicating that the system has transformed into an insulator in which the metallic surface conduction is blocked. In agreement with the observed MIT, Raman spectroscopy reveals the emergence of vibrational modes arising from Sb-Sb and Sb-Se bonds at high Sb concentrations, confirming the appearance of Sb2Se3 crystal structure in the sample. These results suggest that nanostructured chalcogenide films with controlled doping can be a tunable platform for fundamental studies and electronic applications of topological insulator systems.

preprint2013arXiv

Observation of Low Energy Raman Modes in Twisted Bilayer Graphene

Two new Raman modes below 100 cm^-1 are observed in twisted bilayer graphene grown by chemical vapor deposition. The two modes are observed in a small range of twisting angle at which the intensity of the G Raman peak is strongly enhanced, indicating that these low energy modes and the G Raman mode share the same resonance enhancement mechanism, as a function of twisting angle. The 94 cm^-1 mode (measured with a 532 nm laser excitation) is assigned to the fundamental layer breathing vibration (ZO (prime) mode) mediated by the twisted bilayer graphene lattice, which lacks long-range translational symmetry. The dependence of this modes frequency and linewidth on the rotational angle can be explained by the double resonance Raman process which is different from the previously-identified Raman processes activated by twisted bilayer graphene superlattice. The dependence also reveals the strong impact of electronic-band overlaps of the two graphene layers. Another new mode at 52 cm^-1, not observed previously in the bilayer graphene system, is tentatively attributed to a torsion mode in which the bottom and top graphene layers rotate out-of-phase in the plane.