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Congwei Xie

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Published work

4 published item(s)

preprint2022arXiv

PNO: A Promising Deep-UV Nonlinear Optical Material with Extremely High Second Harmonic Generation Effect

In this work, the polar tetrahedron [PN$_2$O$_2$] was revealed as a new deep-ultraviolet (deep-UV) nonlinear optically active unit. Accordingly, a thermodynamically stable compound (PNO) consisting of the polar [PN$_2$O$_2$] units was predicted and suggested as a promising candidate of deep-UV nonlinear optical (NLO) material. Compared with other deep-UV materials known to date, PNO possesses the strongest second harmonic generation (SHG) coefficient (about 6 times that of KH$_2$PO$_4$ (KDP)). Moreover, its three-dimensional connectivity endows it with good mechanical and thermal properties. Therefore, PNO should be a new option for non-$π$-conjugated deep-UV NLO materials.

preprint2015arXiv

Effect of carbon vacancies on structural and mechanical properties of stable zirconium carbides: A first principles study

By using evolutionary algorithm USPEX, we have predicted a number of stable zirconium carbides. In addition to the well-known rocksalt-type stoichiometric ZrC (Fm-3m), present prediction also identifies five stable substoichiometric zirconium carbides adopting rocksalt-type structures with ordered carbon vacancies, Zr8C7 (P-1), Zr6C5 (C2/m), Zr5C4 (P-1), Zr3C2 (C2/m), and Zr2C (Fd-3m). The effects of carbon vacancies on structural and mechanical properties are investigated. We highlight that the distribution of carbon vacancies has significant influence on volume, Pugh's ratio, and hardness. We further propose that hardness can be enhanced by replacing carbon vacancies with suitable elements, in particular nitrogen and oxygen.

preprint2013arXiv

Evolutionary search for new high-k dielectric materials: methodology and applications to hafnia-based oxides

High-k dielectric materials are important as gate oxides in microelectronics and as potential dielectrics for capacitors. In order to enable computational discovery of novel high-k dielectric materials, we propose a fitness model (energy storage density) that includes the dielectric constant, bandgap, and intrinsic breakdown field. This model, used as fitness function in conjunction with first-principles calculations and global optimization evolutionary algorithm USPEX, efficiently leads to practically important results. We found a number of high-fitness structures of SiO2 and HfO2, some of which correspond to known phases and some are new. The results allow us to propose characteristics (genes) common to high-fitness structures - these are the coordination polyhedra and their degree of distortion. Our variable-composition searches in the HfO2-SiO2 system uncovered several high-fitness states. This hybrid algorithm opens up a new avenue of discovering novel high-k dielectrics with both fixed and variable compositions, and will speed up the process of materials discovery.

preprint2013arXiv

Prediction of stable hafnium carbides: their stoichiometries, mechanical properties, and electronic structure

Hafnium carbides are studied by a systematic search for possible stable stoichiometric compounds in the Hf-C system at ambient pressure using variable-composition ab initio evolutionary algorithm implemented in the USPEX code. In addition to well-known HfC, we predicted two additional compounds Hf3C2 and Hf6C5. The structure of Hf6C5 with space group C2/m contains 11 atoms in the primitive cell and this prediction revives the earlier proposal by A. I. Gusev. The stable structure of Hf3C2 also has space group C2/m, and is more energetically favorable than the Immm, P-3m1, P2 and C2221 structures put forward by A. I. Gusev. Dynamical and mechanical stability of the newly predicted structures have been verified by calculations of their phonons and elastic constants. The bulk and shear moduli of Hf3C2 are 195.8 GPa and 143.1 GPa, respectively, while for Hf6C5 they are 227.9 GPa and 187.2 GPa, respectively. Their mechanical properties are inferior to those of HfC due to the presence of structural vacancies. Chemical bonding, band structure, and Bader charge are presented and discussed.