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Claire Marrache-Kikuchi

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Published work

2 published item(s)

preprint2022arXiv

Density-tuned isotherms and dynamic change at phase transition in a gate-controlled superconducting system

Two-dimensional electron gases in SrTiO3-based heterostructures provide a platform to study the real-time evolution of the macroscopic state with a variation of the carrier density, and the impact of structural properties on the emergence of the superconducting state. We have explored the isothermal evolution of the electron gas in AlOx/SrTiO3 by measuring the variation of resistance with continuous gate-voltage-controlled tuning of its carrier density. It is seen that condensation of the ordered phase leads to non-monotonic isotherms within the superconducting dome. The timescale for dynamic change following changes in gate voltage is measured across the phase transition. It is found to be tens of seconds near the onset of superconductivity, significantly larger compared to the normal state. Such a large timescale governing the kinetics of the phase transition presumably arises from the strong impact of structural defects and distortions of the substrate on the development of superconducting islands.

preprint2011arXiv

Transport Measurements of Strongly-Correlated Electrons on Helium in a Classical Point-Contact Device

We present transport measurements of electrons on the surface of liquid helium in a microchannel device in which a constriction may be formed by a split-gate electrode. The surface electron current passing through the microchannel first decreases and is then completely suppressed as the split-gate voltage is swept negative. The current decreases in a steplike manner, due to changes in the number of electrons able to pass simultaneously through the constriction. We investigate the dependence of the electron transport on the AC driving voltage and the DC potentials applied to the sample electrodes, in order to understand the electrostatic potential profile of the constriction region. Our results are in good agreement with a finite element modeling analysis of the device. We demonstrate that the threshold of current flow depends not only on the applied potentials but also on the surface electron density. The detailed understanding of the characteristics of such a device is an important step in the development of mesoscopic experiments with surface electrons on liquid helium.