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Ciro Taranto

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Published work

5 published item(s)

preprint2016arXiv

Screened moments and absence of ferromagnetism in FeAl

While the stoichiometric intermetallic compound FeAl is found to be paramagnetic in experiment, standard band-theory approaches predict the material to be ferromagnetic. We show that this discrepancy can be overcome by a better treatment of electronic correlations with density functional plus dynamical mean field theory. Our results show no ferromagnetism down to 100 K and since the susceptibility is decreasing at the lowest temperatures studied we also do not expect ferromagnetism at even lower temperatures. This behavior is found to originate from temporal quantum fluctuations that screen short-lived local magnetic moments of 1.6 $μ_B$ on Fe.

preprint2015arXiv

Correlated starting points for the functional renormalization group

We present a general frame to extend functional renormalization group (fRG) based computational schemes by using an exactly solvable interacting reference problem as starting point for the RG flow. The systematic expansion around this solution accounts for a non-perturbative inclusion of correlations. Introducing auxiliary fermionic fields by means of a Hubbard-Stratonovich transformation, we derive the flow equations for the auxiliary fields and determine the relation to the conventional weak-coupling truncation of the hierarchy of flow equations. As a specific example we consider the dynamical mean-field theory (DMFT) solution as reference system, and discuss the relation to the recently introduced DMF$^2$RG and the dual-fermion formalism.

preprint2013arXiv

Electronics with correlated oxides: SrVO$_3$/SrTiO$_3$ as a Mott transistor

We employ density functional theory plus dynamical mean field theory and identify the physical origin of why two layers of SrVO$_3$ on a SrTiO$_3$ substrate are insulating: the thin film geometry lifts the orbital degeneracy which in turn triggers a Mott-Hubbard transition. Two layers of SrVO$_3$ are just at the verge of a Mott-Hubbard transition and hence ideally suited for technological applications of the Mott-Hubbard transition: the heterostructure is highly sensitive to strain, electric field, and temperature. A gate voltage can also turn the insulator into a metal, so that a transistor with ideal on-off (metal-insulator) switching properties is realized.

preprint2012arXiv

Comparing $GW$+DMFT and LDA+DMFT for the testbed material SrVO$_3$

We have implemented the $GW$+dynamical mean field theory (DMFT) approach in the Vienna ab initio simulation package. Employing the interaction values obtained from the locally unscreened random phase approximation (RPA), we compare $GW$+DMFT and LDA+DMFT against each other and against experiment for SrVO$_3$. We observed a partial compensation of stronger electronic correlations due to the reduced $GW$ bandwidth and weaker correlations due to a larger screening of the RPA interaction, so that the obtained spectra are quite similar and well agree with experiment. Noteworthily, the $GW$+DMFT better reproduces the position of the lower Hubbard side band.

preprint2012arXiv

Effective Onsite Interaction for Dynamical Mean-Field Theory

A scheme to incorporate non-local polarizations into the dynamical mean-field theory (DMFT) and a tailor-made way to determine the effective interaction for the DMFT are systematically investigated. Applying it to the two-dimensional Hubbard model, we find that non-local polarizations induce a non-trivial filling-dependent anti-screening effect for the effective interaction. The present scheme combined with density functional theory offers an ab initio way to derive effective onsite interactions for the impurity problem in DMFT. We apply it to SrVO3 and find that the anti-screening competes with the screening caused by the off-site interaction.