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Cinzia Casiraghi

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Published work

7 published item(s)

preprint2020arXiv

Raman Fingerprints of Graphene Produced by Anodic Electrochemical Exfoliation

Electrochemical exfoliation is one of the most promising methods for scalable production of graphene. However, limited understanding of its Raman spectrum as well as lack of measurement standards for graphene strongly limit its industrial applications. In this work we show a systematic study of the Raman spectrum of electrochemically exfoliated graphene, produced using different electrolytes and different types of solvents in varying amounts. We demonstrate that no information on the thickness can be extracted from the shape of the 2D peak as this type of graphene is defective. Furthermore, the number of defects and the uniformity of the samples strongly depend on the experimental conditions, including post-processing. Under specific conditions, formation of short conductive trans-polyacetylene chains has been observed. Our Raman analysis provides guidance for the community on how to get information on defects coming from electrolyte, temperature and other experimental conditions, by making Raman spectroscopy a powerful metrology tool.

preprint2016arXiv

Raman fingerprints of atomically precise graphene nanoribbons

Bottom-up approaches allow the production of ultra-narrow and atomically precise graphene nanoribbons (GNRs), with electronic and optical properties controlled by the specific atomic structure. Combining Raman spectroscopy and ab-initio simulations, we show that GNR width, edge geometry and functional groups all influence their Raman spectra. The low-energy spectral region below 1000 cm-1 is particularly sensitive to edge morphology and functionalization, while the D peak dispersion can be used to uniquely fingerprint the presence of GNRs, and differentiates them from other sp2 carbon nanostructures.

preprint2012arXiv

Probing the Nature of Defects in Graphene by Raman Spectroscopy

Raman Spectroscopy is able to probe disorder in graphene through defect-activated peaks. It is of great interest to link these features to the nature of disorder. Here we present a detailed analysis of the Raman spectra of graphene containing different type of defects. We found that the intensity ratio of the D and D' peak is maximum (~ 13) for sp3-defects, it decreases for vacancy-like defects (~ 7) and reaches a minimum for boundaries in graphite (~3.5).

preprint2012arXiv

Raman spectroscopy of graphene and bilayer under biaxial strain: bubbles and balloons

In this letter we use graphene bubbles to study the Raman spectrum of graphene under biaxial (e.g. isotropic) strain. Our Gruneisen parameters are in excellent agreement with the theoretical values. Discrepancy in the previously reported values is attributed to the interaction of graphene with the substrate. Bilayer balloons (intentionally pressurized membranes) have been used to avoid the effect of the substrate and to study the dependence of strain on the inter-layer interactions.

preprint2011arXiv

Electrochemical behaviour of monolayer and bilayer graphene

Results of a study on the electrochemical properties of exfoliated single and multilayer graphene flakes are presented. Graphene flakes were deposited on silicon/silicon oxide wafers to enable fast and accurate characterization by optical microscopy and Raman spectroscopy. Conductive silver paint and silver wires were used to fabricate contacts; epoxy resin was employed as masking coating in order to expose a stable, well defined area of graphene. Both multilayer and monolayer graphene microelectrodes showed quasi-reversible behavior during voltammetric measurements in potassium ferricyanide. However, the standard heterogeneous charge transfer rate constant, k°, was estimated to be higher for mono-layer graphene flakes.

preprint2011arXiv

High-Yield Production and Transfer of Graphene Flakes Obtained by Anodic Bonding

We report large-yield production of graphene flakes on glass by anodic bonding. Under optimum conditions, we counted several tens of flakes with lateral size around 20-30 μm and few tens of flakes with larger size. 60-70% of the flakes have negligible D peak. We show that it is possible to easily transfer the flakes by wedging technique. The transfer on silicon does not damage graphene and lowers the doping. The charge mobility of the transferred flakes on silicon is of the order of 6000 cm^2/V s (at carrier concentration of 10^12 cm^-2), which is typical for devices prepared on this substrate with exfoliated graphene.

preprint2006arXiv

Born-Oppenheimer Breakdown in Graphene

The Born-Oppenheimer approximation (BO) has proven effective for the accurate determination of chemical reactions, molecular dynamics and phonon frequencies in a wide range of metallic systems. Graphene, recently discovered in the free state, is a zero band-gap semiconductor, which becomes a metal if the Fermi energy is tuned applying a gate-voltage Vg. Graphene electrons near the Fermi energy have twodimensional massless dispersions, described by Dirac cones. Here we show that a change in Vg induces a stiffening of the Raman G peak (i.e. the zone-center E2g optical phonon), which cannot be described within BO. Indeed, the E2g vibrations cause rigid oscillations of the Dirac-cones in the reciprocal space. If the electrons followed adiabatically the Dirac-cone oscillations, no change in the phonon frequency would be observed. Instead, since the electron-momentum relaxation near the Fermi level is much slower than the phonon motion, the electrons do not follow the Dirac-cone displacements. This invalidates BO and results in the observed phonon stiffening. This spectacular failure of BO is quite significant since BO has been the fundamental paradigm to determine crystal vibrations from the early days of quantum mechanics.