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Chungang Duan

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cond-mat.dis-nn cond-mat.mtrl-sci cond-mat.str-el physics.app-ph

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preprint2022arXiv

Ferroelectricity driven by magnetism in quasi-one-dimensional Ba9Fe3Se15

The spin-induced ferroelectricity in quasi-1D spin chain system is little known, which could be fundamentally different from those in three-dimensional (3D) system. Here, we report the ferroelectricity driven by a tilted screw spin order and its exotic dynamic in the spin-chain compound Ba9Fe3Se15. It is found that the spin-induced polarization has already occurred and exhibits magnetoelectric coupling behavior far above the long-range spin order (LRSO) at TN = 14 K. The polarized entities grow and their dynamic responses slow down gradually with decreasing temperature and permeate the whole lattice to form 3D ferroelectricity at TN. Our results reveal that the short-range spin orders (SRSOs) in the decoupled chains play a key role for the exotic dynamic in this dimension reduced system. Ba9Fe3Se15 is the only example so far which exhibits electric polarization above LRSO temperature because of the formation of SRSOs.

preprint2020arXiv

Recent advances, perspectives and challenges in ferroelectric synapses

The multiple ferroelectric polarization tuned by external electric field could be used to simulate the biological synaptic weight. Ferroelectric synaptic devices have two advantages compared with other reported ones: One is the intrinsic switching of ferroelectric domains without invoking of defect migration as in resistive oxides contributes reliable performance in these ferroelectric synapses. Another tremendous advantage is the extremely low energy consumption because the ferroelectric polarization is manipulated by electric field which eliminate the Joule heating by current as in magnetic and phase change memory. Ferroelectric synapses are potential for the construction of low-energy and effective brain-like intelligent networks. Here we summarize recent pioneering work of ferroelectric synapses involving the structure of ferroelectric tunnel junctions (FTJs), ferroelectric diodes (FDs) and ferroelectric field effect transistors (FeFETs), respectively, and shed light on future work needed to accelerate their application for efficient neural network.