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Chung-Soo Kim

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Published work

4 published item(s)

preprint2020arXiv

Nanostructured-membrane electron phase plates

Electron beams can acquire designed phase modulations by passing through nanostructured material phase plates. These phase modulations enable electron wavefront shaping and benefit electron microscopy, spectroscopy, lithography, and interferometry. However, in the fabrication of electron phase plates, the typically used focused-ion-beam-milling method limits the fabrication throughput and hence the active area of the phase plates. Here, we fabricated large-area electron phase plates with electron-beam lithography and reactive-ion-etching. The phase plates are characterized by electron diffraction in transmission electron microscopes with various electron energies, as well as diffractive imaging in a scanning electron microscope. We found the phase plates could produce a null in the center of the bright-field based on coherent interference of diffractive beams. Our work adds capabilities to the fabrication of electron phase plates. The nullification of the direct beam and the tunable diffraction efficiency demonstrated here also paves the way towards novel dark-field electron-microscopy techniques and tunable electron phase plates.

preprint2016arXiv

A nanofabricated, monolithic, path-separated electron interferometer

We report a self-aligned, monolithic electron interferometer, consisting of two 45 nm thick silicon layers separated by 20 $μ$m. This interferometer was fabricated from a single crystal silicon cantilever on a transmission electron microscope grid by gallium focused ion-beam milling. Using this interferometer, we demonstrate beam path-separation, and obtain interference fringes in a Mach-Zehnder geometry, in an unmodified 200 kV transmission electron microscope. The fringes have a period of 0.32 nm, which corresponds to the $\left[\bar{1}\bar{1}1\right]$ lattice planes of silicon, and a maximum contrast of 15 %. This design can potentially be scaled to millimeter-scale, and used in electron holography. It can also be applied to perform fundamental physics experiments, such as interaction-free measurement with electrons.

preprint2015arXiv

Designs for a Quantum Electron Microscope

One of the astounding consequences of quantum mechanics is that it allows the detection of a target using an incident probe, with only a low probability of interaction of the probe and the target. This 'quantum weirdness' could be applied in the field of electron microscopy to generate images of beam-sensitive specimens with substantially reduced damage to the specimen. A reduction of beam-induced damage to specimens is especially of great importance if it can enable imaging of biological specimens with atomic resolution. Following a recent suggestion that interaction-free measurements are possible with electrons, we now analyze the difficulties of actually building an atomic resolution interaction-free electron microscope, or "quantum electron microscope". A quantum electron microscope would require a number of unique components not found in conventional transmission electron microscopes. These components include a coherent electron-beam splitter or two-state-coupler, and a resonator structure to allow each electron to interrogate the specimen multiple times, thus supporting high success probabilities for interaction-free detection of the specimen. Different system designs are presented here, which are based on four different choices of two-state-couplers: a thin crystal, a grating mirror, a standing light wave and an electro-dynamical pseudopotential. Challenges for the detailed electron optical design are identified as future directions for development. While it is concluded that it should be possible to build an atomic resolution quantum electron microscope, we have also identified a number of hurdles to the development of such a microscope and further theoretical investigations that will be required to enable a complete interpretation of the images produced by such a microscope.

preprint2014arXiv

Universal scaling of the critical temperature for thin films near the superconducting-to-insulating transition

Thin superconducting films form a unique platform for geometrically-confined, strongly-interacting electrons. They allow an inherent competition between disorder and superconductivity, which in turn enables the intriguing superconducting-to-insulator transition and believed to facilitate the comprehension of high-Tc superconductivity. Furthermore, understanding thin film superconductivity is technologically essential e.g. for photo-detectors, and quantum-computers. Consequently, the absence of an established universal relationships between critical temperature ($T_c$), film thickness ($d$) and sheet resistance ($R_s$) hinders both our understanding of the onset of the superconductivity and the development of miniaturised superconducting devices. We report that in thin films, superconductivity scales as $d^.$$T_c(R_s)$. We demonstrated this scaling by analysing the data published over the past 46 years for different materials (and facilitated this database for further analysis). Moreover, we experimentally confirmed the discovered scaling for NbN films, quantified it with a power law, explored its possible origin and demonstrated its usefulness for superconducting film-based devices.