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Chul-Hee Min

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4 publications

preprint2020arXiv

Orbital Fingerprint of Topological Fermi Arcs in a Weyl Semimetal

The monopnictides TaAs and TaP are well-established Weyl semimetals. Yet, a precise assignment of Fermi arcs, accomodating the predicted chiral charge of the bulk Weyl points, has been difficult in these systems, and the topological character of different surface features in the Fermi surface is not fully understood. Here, employing a joint analysis from linear dichroism in angle-resolved photoemission and first-principles calculations, we unveil the orbital texture on the full Fermi surface of TaP(001). We observe pronounced switches in the orbital texture at the projectedWeyl nodes, and show how they facilitate a topological classification of the surface band structure. Our findings establish a critical role of the orbital degrees of freedom in mediating the surface-bulk connectivity in Weyl semimetals.

preprint2016arXiv

Electronic structure of YbB6_{6}: Is it a Topological Insulator or not?

To resolve the controversial issue of the topological nature of the electronic structure of YbB6_{6}, we have made a combined study using density functional theory (DFT) and angle resolved photoemission spectroscopy (ARPES). Accurate determination of the low energy band topology in DFT requires the use of modified Becke-Johnson exchange potential incorporating the spin-orbit coupling and the on-site Coulomb interaction UU of Yb 4f4f electrons as large as 7 eV. We have double-checked the DFT result with the more precise GW band calculation. ARPES is done with the non-polar (110) surface termination to avoid band bending and quantum well confinement that have confused ARPES spectra taken on the polar (001) surface termination. Thereby we show definitively that YbB6_{6} has a topologically trivial B 2pp-Yb 5dd semiconductor band gap, and hence is a non-Kondo non-topological insulator (TI). In agreement with theory, ARPES shows pure divalency for Yb and a pp-dd band gap of 0.3 eV, which clearly rules out both of the previous scenarios of ff-dd band inversion Kondo TI and pp-dd band inversion non-Kondo TI. We have also examined the pressure-dependent electronic structure of YbB6_{6}, and found that the high pressure phase is not a Kondo TI but a \emph{p}-\emph{d} overlap semimetal.

preprint2013arXiv

The importance of Charge Fluctuations for the Topological Phase in SmB6_6

The discovery of topologically non-trivial states in band insulators has induced an extensive search for topological phase in strongly correlated electron systems. In particular, samarium hexaboride (SmB6_6) has drawn much attention as it might represent a new class of condensed matter called topological Kondo insulator. Kondo insulators (KI) can have non-trivial Z2_2 topology because the energy gap opens at the Fermi energy (EFE_F) by hybridization between an odd- parity renormalized ff band and an even- parity conduction dd band. However, the characteristics of SmB6_6 deviate from the conventional KI because its gap is insensitive to doping and pressure. Thus, it is unclear what makes the gap of SmB6_6 different from that of KI, and how the band inversion features occur. In this manuscript, we demonstrate the importance of charge fluctuations in SmB6_6. Our angle-resolved photoemission spectroscopy (ARPES) results reveal that with decreasing temperature the bottom of the dd-ff hybridized band at the Xˉ\bar{\text{X}} point gradually shifts from below to above EFE_F. This shift accompanies a redistribution of spectral weight from the upper to the lower quasiparticle band, and reflects the change in both carrier density and the number of localized ff electron. Moreover, because this hybridized band is predicted to have odd parity and to induce a non-trivial Z2Z_{2} topology, we compare our ARPES spectra with theoretical surface band structures and find signatures of topological surface states. Therefore, our results indicate that SmB6_6 is a charge fluctuating topological insulator having the odd-parity hybridized band above EFE_F at the XX point. This demonstrates that the charge fluctuations do not only drive the insulating bulk phase but also the non-trivial topological phase.

preprint2012arXiv

Single Dirac-cone on the Cs-covered topological insulator surface Sb2Te3(0001)

Using angle-resolved photoelectron spectroscopy we investigate the surface electronic structure of the three-dimensional topological insulator (TI) Sb2Te3(0001). Our data show the presence of a topological surface state in the bulk energy gap with the Dirac-point located above the Fermi level. The adsorption of Cs-atoms on Sb2Te3(0001) gives rise to a downward energy shift of the electronic valence band states which saturates at a value of ~200 meV. For the saturation coverage the Dirac-point of the linearly dispersive surface state resides in close proximity to the Fermi level. The electronic structure of the Cs/Sb2Te3 interface therefore considerably deviates from previously studied metal-TI interfaces based on the isostructural compound Bi2Se3 which points to the importance of atomic composition in these hetero systems.

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