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Researcher profile

Christos Papavassiliou

Christos Papavassiliou contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
Emerging Technologieseess.SYSystems and Controleess.SPNeural and Evolutionary Computing

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Published work

6 published item(s)

preprint2022arXiv

A CMOS-based Characterisation Platform for Emerging RRAM Technologies

Mass characterisation of emerging memory devices is an essential step in modelling their behaviour for integration within a standard design flow for existing integrated circuit designers. This work develops a novel characterisation platform for emerging resistive devices with a capacity of up to 1 million devices on-chip. Split into four independent sub-arrays, it contains on-chip column-parallel DACs for fast voltage programming of the DUT. On-chip readout circuits with ADCs are also available for fast read operations covering 5-decades of input current (20nA to 2mA). This allows a device's resistance range to be between 1k$Ω$ and 10M$Ω$ with a minimum voltage range of $\pm$1.5V on the device.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

A High-Voltage Characterisation Platform For Emerging Resistive Switching Technologies

Emerging memristor-based array architectures have been effectively employed in non-volatile memories and neuromorphic computing systems due to their density, scalability and capability of storing information. Nonetheless, to demonstrate a practical on-chip memristor-based system, it is essential to have the ability to apply large programming voltage ranges during the characterisation procedures for various memristor technologies. This work presents a 16x16 high voltage memristor characterisation array employing high voltage CMOS circuitry. The proposed system has a maximum programming range of $\pm22V$ to allow on-chip electroforming and I-V sweep. In addition, a Kelvin voltage sensing system is implemented to improve the readout accuracy for low memristance measurements. This work addresses the limitation of conventional CMOS-memristor platforms which can only operate at low voltages, thus limiting the characterisation range and integration options of memristor technologies.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

A Wide Dynamic Range Read-out System For Resistive Switching Technology

The memristor, because of its controllability over a wide dynamic range of resistance, has emerged as a promising device for data storage and analog computation. A major challenge is the accurate measurement of memristance over a wide dynamic range. In this paper, a novel read-out circuit with feedback adjustment is proposed to measure and digitise input current in the range between 20nA and 2mA. The magnitude of the input currents is estimated by a 5-stage logarithmic current-to-voltage amplifier which scales a linear analog-to-digital converter. This way the least significant bit tracks the absolute input magnitude. This circuit is applicable to reading single memristor conductance, and is also preferable in analog computing where read-out accuracy is particularly critical. The circuits have been realized in Bipolar-CMOS-DMOS (BCD) Gen2 technology.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

An Adiabatic Capacitive Artificial Neuron with RRAM-based Threshold Detection for Energy-Efficient Neuromorphic Computing

In the quest for low power, bio-inspired computation both memristive and memcapacitive-based Artificial Neural Networks (ANN) have been the subjects of increasing focus for hardware implementation of neuromorphic computing. One step further, regenerative capacitive neural networks, which call for the use of adiabatic computing, offer a tantalising route towards even lower energy consumption, especially when combined with `memimpedace' elements. Here, we present an artificial neuron featuring adiabatic synapse capacitors to produce membrane potentials for the somas of neurons; the latter implemented via dynamic latched comparators augmented with Resistive Random-Access Memory (RRAM) devices. Our initial 4-bit adiabatic capacitive neuron proof-of-concept example shows 90% synaptic energy saving. At 4 synapses/soma we already witness an overall 35% energy reduction. Furthermore, the impact of process and temperature on the 4-bit adiabatic synapse shows a maximum energy variation of 30% at 100 degree Celsius across the corners without any functionality loss. Finally, the efficacy of our adiabatic approach to ANN is tested for 512 & 1024 synapse/neuron for worst and best case synapse loading conditions and variable equalising capacitance's quantifying the expected trade-off between equalisation capacitance and range of optimal power-clock frequencies vs. loading (i.e. the percentage of active synapses).

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

An FPGA-based System for Generalised Electron Devices Testing

Electronic systems are becoming more and more ubiquitous as our world digitises. Simultaneously, even basic components are experiencing a wave of improvements with new transistors, memristors, voltage/current references, data converters, etc, being designed every year by hundreds of R&D groups world-wide. To date, the workhorse for testing all these designs has been a suite of lab instruments including oscilloscopes and signal generators, to mention the most popular. However, as components become more complex and pin numbers soar, the need for more parallel and versatile testing tools also becomes more pressing. In this work, we describe and benchmark an FPGA system developed that addresses this need. This general purpose testing system features a 64-channel source-meter unit (SMU), and 2x banks of 32 digital pins for digital I/O. We demonstrate that this bench-top system can obtain $170 pA$ current noise floor, $40 ns$ pulse delivery at $\pm13.5 V$ and $12 mA$ maximum current drive/channel. We then showcase the instrument's use in performing a selection of three characteristic measurement tasks: a) current-voltage (IV) characterisation of a diode and a transistor, b) fully parallel read-out of a memristor crossbar array and c) an integral non-linearity (INL) test on a DAC. This work introduces a down-scaled electronics laboratory packaged in a single instrument which provides a shift towards more affordable, reliable, compact and multi-functional instrumentation for emerging electronic technologies.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Analysing and Measuring the Performance ofMemristive Integrating Amplifiers

Recording reliably extracellular neural activities isan essential prerequisite for the development of bioelectronicsand neuroprosthetic applications. Recently, a fully differential,2-stage, integrating pre-amplifier was proposed for amplifyingand then digitising neural signals. The amplifier featured a finelytuneable offset that was used as a variable threshold detector.Given that the amplifier is integrating, the DC operating pointkeeps changing during integration, rendering traditional analysis(AC/DC) unsuitable. In this work, we analyse the operation ofthis circuit and propose alternative definitions for validating thenecessary key performance metrics, including: gain, bandwidth,offset tuning range and offset sensitivity with respect to thememory states of the employed memristors. The amplificationprocess is analysed largely through investigating the transientbehaviour during the integration phase. This benchmarkingapproach is finally leveraged for providing useful insights anddesign trade-offs of the memristor-based integrating amplifier.

0 citations0 reviewsNo code linkedOpen access