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Christopher W. Petz

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cond-mat.mes-hall cond-mat.mtrl-sci

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preprint2011arXiv

Inhomogeneous low temperature epitaxial breakdown during Si overgrowth of GeSi quantum dots

Low temperature epitaxial breakdown of inhomogeneously strained Si capping layers is investigated. By growing Si films on coherently strained GeSi quantum dot surfaces, we differentiate effects of surface roughness, strain, and growth orientation on the mechanism of epitaxial breakdown. Using atomic force microscopy and high resolution cross-sectional transmission electron microscopy we find that while local lattice strain up to 2% has a negligible effect, growth on higher-index facets such as {113} significantly reduces the local breakdown thickness. Nanoscale growth mound formation is observed above all facet orientations. Since diffusion lengths depend directly on the surface orientation, we relate the variation in epitaxial thickness to the low temperature stability of specific growth facets and on the average size of kinetically limited growth mounds.

preprint2011arXiv

Mechanisms for directed self-assembly of heteroepitaxial Ge/Si quantum dots with deterministic placement and sub-23nm spacing on SiC nanotemplates

Artificially ordered Ge quantum dot (QD) arrays, where confined carriers can interact via exchange coupling, may create unique functionalities such as cluster qubits and spintronic bandgap systems. Development of such arrays for quantum computing requires fine control over QD size and spatial arrangement on the sub-35 nm length scale. We employ fine-probe electron-beam irradiation to locally decompose ambient hydrocarbons onto a bare Si (001) surface. These carbonaceous patterns are annealed in UHV, forming ordered arrays of nanoscale SiC precipitates that serve as templates for subsequent Ge quantum dot self-assembly during heteroepitaxy. This templating approach has so far produced interdot spacings down to 22.5 nm, and smaller spacings should be possible. We investigate the templated feature evolution during UHV processing to identify key mechanisms that must be controlled in order to preserve pattern fidelity and reduce broadening of the quantum dot size distribution. A key finding is that the presence of a small background of excess carbon reduces Ge surface diffusion, thereby suppressing coarsening to relatively high temperatures. In fact, coarsening of the carbonaceous nanodot template prior to conversion to SiC can be a more important contributor to size dispersion, and must be avoided through control of thermal budget.

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