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Christoph Becher

Christoph Becher appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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quant-phcond-mat.mtrl-sciphysics.opticscond-mat.mes-hallphysics.app-phphysics.atom-phphysics.comp-phphysics.gen-ph

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Published work

35 published item(s)

preprint2022arXiv

2022 Roadmap for Materials for Quantum Technologies

Quantum technologies are poised to move the foundational principles of quantum physics to the forefront of applications. This roadmap identifies some of the key challenges and provides insights on materials innovations underlying a range of exciting quantum technology frontiers. Over the past decades, hardware platforms enabling different quantum technologies have reached varying levels of maturity. This has allowed for first proof-of-principle demonstrations of quantum supremacy, for example quantum computers surpassing their classical counterparts, quantum communication with reliable security guaranteed by laws of quantum mechanics, and quantum sensors uniting the advantages of high sensitivity, high spatial resolution, and small footprints. In all cases, however, advancing these technologies to the next level of applications in relevant environments requires further development and innovations in the underlying materials. From a wealth of hardware platforms, we select representative and promising material systems in currently investigated quantum technologies. These include both the inherent quantum bit systems as well as materials playing supportive or enabling roles, and cover trapped ions, neutral atom arrays, rare earth ion systems, donors in silicon, color centers and defects in wide-band gap materials, two-dimensional materials and superconducting materials for single-photon detectors. Advancing these materials frontiers will require innovations from a diverse community of scientific expertise, and hence this roadmap will be of interest to a broad spectrum of disciplines.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Coherence of a charge stabilised tin-vacancy spin in diamond

Quantum information processing (QIP) with solid state spin qubits strongly depends on the efficient initialisation of the qubit's desired charge state. While the negatively charged tin-vacancy ($\text{SnV}^{-}$) centre in diamond has emerged as an excellent platform for realising QIP protocols due to long spin coherence times at liquid helium temperature and lifetime limited optical transitions, its usefulness is severely limited by termination of the fluorescence under resonant excitation [1,2,3]. Here, we unveil the underlying charge cycle of group IV-vacancy (G4V) centres and exploit it to demonstrate highly efficient initialisation of the desired negative charge state of single SnV centres while preserving long term stable optical resonances. We furthermore all-optically probe the coherence of the ground state spins by means of coherent population trapping and find a spin dephasing time of 5$μ$s. Additionally, we demonstrate proof-of-principle single shot spin state readout without the necessity of a magnetic field aligned to the symmetry axis of the defect.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Entangling single atoms over 33 km telecom fibre

Heralded entanglement between distant quantum memories is the key resource for quantum networks. Based on quantum repeater protocols, these networks will facilitate efficient large-scale quantum communication and distributed quantum computing. However, despite vast efforts, long-distance fibre based network links have not been realized yet. Here we present results demonstrating heralded entanglement between two independent, remote single-atom quantum memories generated over fibre links with a total length up to 33 km. To overcome the attenuation losses in the long optical fibres of photons initially emitted by the Rubidium quantum memories, we employ polarization-preserving quantum frequency conversion to the low loss telecom band. The presented work represents a milestone towards the realization of efficient quantum network links.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Effect of phonons on the electron spin resonance absorption spectrum

The unavoidable presence of vibrations in solid-state devices can drastically modify the expected electron spin resonance (ESR) absorption spectrum in magnetically active systems. In this work, we model the effect of phonons and temperature on the ESR signal in molecular systems with strong $E \otimes e$ Jahn-Teller (JT) effect and an electronic spin-$1/2$. Our microscopic model considers the linear JT interaction with a continuum of phonon modes, the spin-orbit coupling, the Zeeman effect, and the response of the system under a weak oscillating magnetic field. We derive a Lindblad master equation for the orbital and spin degrees of freedom, where one- and two-phonon processes are considered for the phonon-induced relaxation, and the thermal dependence of Ham reduction factors is calculated. We find that the suppression of ESR signals is due to phonon broadening but not based on the common assumption of orbital quenching. Our results can be applied to explain the experimentally observed absence of the ESR signal in color centers in diamond, such as the neutral nitrogen-vacancy and negatively charged silicon-vacancy color centers in diamond.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Spectroscopic Investigations of Negatively Charged Tin-Vacancy Centres in Diamond

The recently discovered negatively charged tin-vacancy centre in diamond is a promising candidate for applications in quantum information processing (QIP). We here present a detailed spectroscopic study encompassing single photon emission and polarisation properties, the temperature dependence of emission spectra as well as a detailed analysis of the phonon sideband and Debye-Waller factor. Using photoluminescence excitation spectroscopy (PLE) we probe an energetically higher lying excited state and prove fully lifetime limited linewidths of single emitters at cryogenic temperatures. For these emitters we also investigate the stability of the charge state under resonant excitation. These results provide a detailed insight into the spectroscopic properties of the $\text{SnV}^-$ centre and lay the foundation for further studies regarding its suitability in QIP.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Long-distance distribution of atom-photon entanglement at telecom wavelength

Entanglement between stationary quantum memories and photonic channels is the essential resource for future quantum networks. Together with entanglement distillation it will enable for efficient distribution of quantum states. Here we report on the generation and observation of entanglement between a Rb-87 atom and a photon at telecom wavelength over 20 km optical fiber. For this purpose, we use polarization-preserving quantum frequency conversion to transform the wavelength of a photon entangled with the atomic spin state from 780 nm to the telecom S-band at 1522 nm. We achieve an unprecedented external device conversion efficiency of 57% and observe an entanglement fidelity between the atom and telecom photon of $\geqslant$78.5$\pm$0.9% over 20 km optical fiber, mainly limited by decoherence of the atomic state. This result is an important milestone on the road to distribute quantum information on a large scale.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Spin Measurements of NV Centers Coupled to a Photonic Crystal Cavity

Nitrogen-vacancy (NV) centers feature outstanding properties like a spin coherence time of up to one second as well as a level structure offering the possibility to initialize, coherently manipulate and optically read-out the spin degree of freedom of the ground state. However, only about three percent of their photon emission are channeled into the zero phonon line (ZPL), limiting both the rate of indistinguishable single photons and the signal-to-noise ratio (SNR) of coherent spin-photon interfaces. We here report on the enhancement of the SNR of the optical spin read-out achieved by tuning the mode of a two-dimensional photonic crystal (PhC)cavity into resonance with the NV-ZPL. PhC cavities are fabricated by focused ion beam (FIB) milling in thin reactive ion (RIE) etched ultrapure single crystal diamond membranes featuring modes with Q-factors of up to 8250 at mode volumes below one cubic wavelength. NV centers are produced in the cavities in a controlled fashion by a high resolution atomic force microscope (AFM) implantation technique. On cavity resonance we observe a lifetime shortening from 9.0ns to 8.0ns as well as an enhancement of the ZPL emission by almost one order of magnitude. Although on resonance the collection efficiency of ZPL photons and the spin-dependent fluorescence contrast are reduced, the SNR of the optical spin read-out is almost tripled for the cavity-coupled NV centers.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Photoluminescence excitation and spectral hole burning spectroscopy of silicon vacancy centers in diamond

Silicon-vacancy (SiV) centers in diamond are promising systems for quantum information applications due to their bright single photon emission and optically accessible spin states. Furthermore, SiV centers in low-strain diamond are insensitive to pertubations of the dielectric environment, i.e. they show very weak spectral diffusion. This property renders ensembles of SiV centers interesting for sensing applications. We here report on photoluminescence excitation (PLE) spectroscopy on an SiV ensemble in a low strain, CVD-grown high quality diamond layer, where we measure the fine structure with high resolution and obtain the linewidths and splittings of the SiV centers. We investigate the temperature dependence of the width and position of the fine structure peaks. Our measurements reveal linewidths of about 10 GHz as compared to a lifetime limited width on the order of 0.1 GHz. This difference arises from the inhomogeneous broadening of the transitions caused by residual strain. To overcome inhomogeneous broadening we use spectral hole burning spectroscopy which enables us to measure a nearly lifetime limited homogeneous linewidth of 279 MHz. Furthermore, we demonstrate evidence of coherent interaction in the system by driving a $Λ$-scheme. Additional measurements on single emitters created by ion implantation confirm the homogeneous linewidths seen in the spectral hole burning experiments and relate the ground state splitting to the decoherence rate.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Site selective growth of heteroepitaxial diamond nanoislands containing single SiV centers

We demonstrate the controlled preparation of heteroepitaxial diamond nano- and microstructures on silicon wafer based iridium films as hosts for single color centers. Our approach uses electron beam lithography followed by reactive ion etching to pattern the carbon layer formed by bias enhanced nucleation on the iridium surface. In the subsequent chemical vapor deposition process, the patterned areas evolve into regular arrays of (001) oriented diamond nano-islands with diameters of <500nm and a height of approx. 60 nm. In the islands, we identify single SiV color centers with narrow zero phonon lines down to 1 nm at room temperature.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Ultrafast, all-optical coherent control of single silicon vacancy colour centres in diamond

Recently, the negatively charged silicon vacancy centre (SiV) in diamond has emerged as a novel promising system for quantum information processing (QIP) due to its superior spectral properties and advantageous electronic structure: The SiV offers an optically accessible Λ-type level structure with a large orbital level splitting even without the need of an external magnetic field and previous studies determined the ground state coherence time of the centre to be on the order of 35-45ns. While these studies already indicate the feasibility of an ultrafast all-optical coherent control of the SiV, no experimental realization has been presented so far. Here, we report on optical Rabi oscillations and Ramsey interference between the ground and the excited state of the SiV using 12 ps long, resonant rotation pulses. Moreover, utilizing a Λ-scheme, we demonstrate Raman-based coherent Rabi rotations and Ramsey interference within the ground state manifold using a single, 1ps long off-resonant pulse. These measurements prove the accessibility of the complete set of single-qubit operations relying solely on optical fields and pave the way for high-speed QIP applications using SiV centres.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Nanoimplantation and Purcell enhancement of single NV centers in photonic crystal cavities in diamond

We present the controlled creation of single nitrogen-vacancy (NV) centers via ion implantation at the center of a photonic crystal cavity which is fabricated in an ultrapure, single crystal diamond membrane. High-resolution placement of NV centers is achieved using collimation of a 5keV-nitrogen ion beam through a pierced tip of an atomic force microscope (AFM). We demonstrate coupling of the implanted NV centers' broad band fluorescence to a cavity mode and observe Purcell enhancement of the spontaneous emission. The results are in good agreement with a master equation model for the cavity coupling.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Quantum and classical telecommunication channel multiplexing

We demonstrate the multiplexing of a classical coherent and a quantum state of light in a single telecommunciation fiber. For this purpose we make use of spontaneous parametric down conversion and quantum frequency conversion to generate photon pairs at 854 nm and the telecom O-band. The herald photon triggers a telecom C-band laser pulse. The telecom single photon and the laser pulse are combined and coupled to a standard telecom fiber. Low background time correlation of the classical and quantum signal behind the fiber shows successful telecommunication channel multiplexing.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Telecom-heralded single photon absorption by a single atom

We present, characterize, and apply a photonic quantum interface between the near infrared and telecom spectral regions. A singly resonant optical parametric oscillator (OPO) operated below threshold, in combination with external filters, generates high-rate ($>2.5\cdot10^6~{\rm s}^{-1}$) narrowband photon pairs ($\sim 7$ MHz bandwidth); the signal photons are tuned to resonance with an atomic transition in Ca$^+$, while the idler photons are at telecom wavelength. Quantum interface operation is demonstrated through high-rate absorption of single photons by a single trapped ion ($\sim 670~{\rm s}^{-1}$), heralded by coincident telecom photons.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

All-optical formation of coherent dark states of silicon-vacancy spins in diamond

Spin impurities in diamond can be versatile tools for a wide range of solid-state-based quantum technologies, but finding spin impurities which offer sufficient quality in both photonic and spin properties remains a challenge for this pursuit. The silicon-vacancy center has recently attracted a lot of interest due to its spin-accessible optical transitions and the quality of its optical spectrum. Complementing these properties, spin coherence is essential for the suitability of this center as a spin-photon quantum interface. Here, we report all-optical generation of coherent superpositions of spin states in the ground state of a negatively charged silicon-vacancy center using coherent population trapping. Our measurements reveal a characteristic spin coherence time, T2*, exceeding 250 nanoseconds at 4 K. We further investigate the role of phonon-mediated coupling between orbital states as a source of irreversible decoherence. Our results indicate the feasibility of all-optical coherent control of silicon-vacancy spins using ultrafast laser pulses.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Deterministic coupling of a single silicon-vacancy color center to a photonic crystal cavity in diamond

Deterministic coupling of single solid-state emitters to nanocavities is the key for integrated quantum information devices. We here fabricate a photonic crystal cavity around a preselected single silicon-vacancy color center in diamond and demonstrate modification of the emitters internal population dynamics and radiative quantum efficiency. The controlled, room-temperature cavity coupling gives rise to a resonant Purcell enhancement of the zero-phonon transition by a factor of 19, coming along with a 2.5-fold reduction of the emitter's lifetime.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Narrow-band single photon emission at room temperature based on a single Nitrogen-vacancy center coupled to an all-fiber-cavity

We report the realization of a device based on a single Nitrogen-vacancy (NV) center in diamond coupled to a fiber-cavity for use as single photon source (SPS). The device consists of two concave mirrors each directly fabricated on the facets of two optical fibers and a preselected nanodiamond containing a single NV center deposited onto one of these mirrors. Both, cavity in- and output are directly fiber-coupled and the emission wavelength is easily tunable by variation of the separation of the two mirrors with a piezo-electric crystal. By coupling to the cavity we achieve an increase of the spectral photon rate density by two orders of magnitude compared to free-space emission of the NV center. With this work we establish a simple all-fiber based SPS with promising prospects for the integration into photonic quantum networks.

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preprint2013arXiv

Coupling of a single NV-center in diamond to a fiber-based microcavity

We report on the coupling of a single Nitrogen-vacancy (NV) center in a nanodiamond to a fiber-based microcavity at room temperature. Investigating the very same NV center inside the cavity and in free-space allows to systematically explore a new regime of phonon-assisted cavity feeding. Making use of the NV center's strongly broadened emission, we realize a widely tunable, narrowband single photon source. A master equation model well reproduces our experimental results and predicts a transition into a Purcell-enhanced emission regime at low temperatures.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Evaluation of nitrogen- and silicon-vacancy defect centres as single photon sources in quantum key distribution

We demonstrate a quantum key distribution (QKD) testbed for room temperature single photon sources based on defect centres in diamond. A BB84 protocol over a short free-space transmission line is implemented. The performance of nitrogen-vacancy (NV) as well as silicon-vacancy defect (SiV) centres is evaluated and an extrapolation for next-generation sources with enhanced efficiency is discussed.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Low temperature investigations and surface treatments of colloidal narrowband fluorescent nanodiamonds

We report fluorescence investigations and Raman spectroscopy on colloidal nanodiamonds (NDs) obtained via bead assisted sonic disintegration (BASD) of a polycrystalline chemical vapor deposition film. The BASD NDs contain in situ created silicon vacancy (SiV) centers. Whereas many NDs exhibit emission from SiV ensembles, we also identify NDs featuring predominant emission from a single bright SiV center. We demonstrate oxidation of the NDs in air as a tool to optimize the crystalline quality of the NDs via removing damaged regions resulting in a reduced ensemble linewidth as well as single photon emission with increased purity. We furthermore investigate the temperature dependent zero-phonon-line fine-structure of a bright single SiV center as well as the polarization properties of its emission and absorption.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Low temperature investigations of single silicon vacancy colour centres in diamond

We study single silicon vacancy (SiV) centres in chemical vapour deposition (CVD) nanodiamonds on iridium as well as an ensemble of SiV centres in a high quality, low stress CVD diamond film by using temperature dependent luminescence spectroscopy in the temperature range 5-295 K. We investigate in detail the temperature dependent fine structure of the zero-phonon-line (ZPL) of the SiV centres. The ZPL transition is affected by inhomogeneous as well as temperature dependent homogeneous broadening and blue shifts by about 20 cm-1 upon cooling from room temperature to 5 K. We employ excitation power dependent g(2) measurements to explore the temperature dependent internal population dynamics of single SiV centres and infer almost temperature independent dynamics.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Optical signatures of silicon-vacancy spins in diamond

Colour centres in diamond have emerged as versatile tools for solid-state quantum technologies ranging from quantum information to metrology, where the nitrogen-vacancy centre is the most studied to-date. Recently, this toolbox has expanded to include different materials for their nanofabrication opportunities, and novel colour centres to realize more efficient spin-photon quantum interfaces. Of these, the silicon-vacancy centre stands out with ultrabright single photon emission predominantly into the desirable zero-phonon line. The challenge for utilizing this centre is to realise the hitherto elusive optical access to its electronic spin. Here, we report spin-tagged resonance fluorescence from the negatively charged silicon-vacancy centre. In low-strain bulk diamond spin-selective excitation under finite magnetic field reveals a spin-state purity approaching unity in the excited state. We also investigate the effect of strain on the centres in nanodiamonds and discuss how spin selectivity in the excited state remains accessible in this regime.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Single-photon frequency conversion in nonlinear crystals

Frequency conversion of single photons in a nonlinear crystal is theoretically discussed. Losses and noise are included within a Heisenberg-Langevin formalism for the propagating photon field. We calculate the first- and second-order correlation functions of the frequency-converted light when the input is a train of single-photon pulses. This model allows one to identify the requirements on the nonlinear device so that it can be integrated in a quantum network.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

The electronic structure of the silicon vacancy color center in diamond

The negatively charged silicon vacancy (SiV) color center in diamond has recently proven its suitability for bright and stable single photon emission. However, its electronic structure so far has remained elusive. We here explore the electronic structure by exposing single SiV defects to a magnetic field where the Zeeman effect lifts the degeneracy of magnetic sublevels. The similar response of single centers and a SiV ensemble in a low strain reference sample proves our ability to fabricate almost perfect single SiVs, revealing the true nature of the defect's electronic properties. We model the electronic states using a group-theoretical approach yielding a good agreement with the experimental observations. Furthermore, the model correctly predicts polarization measurements on single SiV centers and explains recently discovered spin selective excitation of SiV defects.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Electronic transitions of single silicon vacancy centers in the near-infrared spectral region

Photoluminescence (PL) spectra of single silicon vacancy (SiV) centers frequently feature very narrow room temperature PL lines in the near-infrared (NIR) spectral region, mostly between 820 nm and 840 nm, in addition to the well known zero-phonon-line (ZPL) at approx. 738 nm [E. Neu et al., Phys. Rev. B 84, 205211 (2011)]. We here exemplarily prove for a single SiV center that this NIR PL is due to an additional purely electronic transition (ZPL). For the NIR line at 822.7 nm, we find a room temperature linewidth of 1.4 nm (2.6 meV). The line saturates at similar excitation power as the ZPL. ZPL and NIR line exhibit identical polarization properties. Cross-correlation measurements between the ZPL and the NIR line reveal anti-correlated emission and prove that the lines originate from a single SiV center, furthermore indicating a fast switching between the transitions (0.7 ns). g(2) auto-correlation measurements exclude that the NIR line is a vibronic sideband or that it arises due to a transition from/to a meta-stable (shelving) state.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Photophysics of single silicon vacancy centers in diamond: implications for single photon emission

Single silicon vacancy (SiV) color centers in diamond have recently shown the ability for high brightness, narrow bandwidth, room temperature single photon emission. This work develops a model describing the three level population dynamics of single SiV centers in diamond nanocrystals on iridium surfaces including an intensity dependent de-shelving process. Furthermore, we investigate the brightness and photostability of single centers and find maximum single photon rates of 6.2 Mcps under continuous excitation. We investigate the collection efficiency of the fluorescence and estimate quantum efficiencies of the SiV centers.

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preprint2012arXiv

Visible-to-telecom quantum frequency conversion of light from a single quantum emitter

Quantum frequency conversion (QFC), a nonlinear optical process in which the frequency of a quantum light field is altered while conserving its non-classical correlations, was first demonstrated 20 years ago. Meanwhile, it is considered an essential tool for the implementation of quantum repeaters since it allows for interfacing quantum memories with telecom-wavelength photons as quantum information carriers. Here we demonstrate efficient (>30%) QFC of visible single photons (711 nm) emitted by a quantum dot (QD) to a telecom wavelength (1,313 nm). Analysis of the first and second-order coherence before and after wavelength conversion clearly proves that important properties, such as the coherence time and photon antibunching, are fully conserved during the frequency translation process. Our findings underline the great potential of single photon sources on demand in combination with QFC as a promising technique for quantum repeater schemes.

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preprint2011arXiv

Fluorescence and polarization spectroscopy of single silicon vacancy centers in heteroepitaxial nanodiamonds on iridium

We introduce an advanced material system for the production and spectroscopy of single silicon vacancy (SiV) color centers in diamond. We use microwave plasma chemical vapor deposition to synthesize heteroepitaxial nanodiamonds of approx. 160 nm in lateral size with a thickness of approx. 75 nm. These oriented 'nanoislands' combine the enhanced fluorescence extraction from subwavelength sized nanodiamonds with defined crystal orientation. The investigated SiV centers display narrow zero-phonon-lines down to 0.7 nm in the wavelength range 730-750 nm. We investigate in detail the phonon-coupling and vibronic sidebands of single SiV centers, revealing significant inhomogeneous effects. Polarization measurements reveal polarized luminescence and preferential absorption of linearly polarized light.

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preprint2011arXiv

Narrowband fluorescent nanodiamonds produced from chemical vapor deposition films

We report on the production of nanodiamonds (NDs) with 70-80 nm size via bead assisted sonic disintegration (BASD) of a polycrystalline chemical vapor deposition (CVD) film. The NDs display high crystalline quality as well as intense narrowband (7 nm) room temperature luminescence at 738 nm due to in situ incorporated silicon vacancy (SiV) centers. The fluorescence properties at room and cryogenic temperatures indicate that the NDs are, depending on preparation, applicable as single photon sources or as fluorescence labels.

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preprint2011arXiv

One- and two-dimensional photonic crystal micro-cavities in single crystal diamond

The development of solid-state photonic quantum technologies is of great interest for fundamental studies of light-matter interactions and quantum information science. Diamond has turned out to be an attractive material for integrated quantum information processing due to the extraordinary properties of its colour centres enabling e.g. bright single photon emission and spin quantum bits. To control emitted photons and to interconnect distant quantum bits, micro-cavities directly fabricated in the diamond material are desired. However, the production of photonic devices in high-quality diamond has been a challenge so far. Here we present a method to fabricate one- and two-dimensional photonic crystal micro-cavities in single-crystal diamond, yielding quality factors up to 700. Using a post-processing etching technique, we tune the cavity modes into resonance with the zero phonon line of an ensemble of silicon-vacancy centres and measure an intensity enhancement by a factor of 2.8. The controlled coupling to small mode volume photonic crystal cavities paves the way to larger scale photonic quantum devices based on single-crystal diamond.

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preprint2010arXiv

Design of microcavities in diamond-based photonic crystals by Fourier- and real-space analysis of cavity fields

We present the design of two-dimensional photonic crystal microcavities in thin diamond membranes well suited for coupling of color centers in diamond. By comparing simulated and ideal field distributions in Fourier and real space and by according modification of air hole positions and size, we optimize the cavity structure yielding high quality factors up to Q = 320000 with a modal volume of V = 0.35 (lambda/n)^3. Using the very same approach we also improve previous designs of a small modal volume microcavity in silicon, gaining a factor of 3 in cavity Q. In view of practical realization of photonic crystals in synthetic diamond films, it is necessary to investigate the influence of material absorption on the quality factor. We show that this influence can be predicted by a simple model, replacing time consuming simulations.

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preprint2010arXiv

Quantum to Classical Transition in a Single-Ion Laser

Stimulated emission of photons from a large number of atoms into the mode of a strong light field is the principle mechanism for lasing in "classical" lasers. The onset of lasing is marked by a threshold which can be characterised by a sharp increase in photon flux as a function of external pumping strength. The same is not necessarily true for the fundamental building block of a laser: a single trapped atom interacting with a single optical radiation mode. It has been shown that such a "quantum" laser can exhibit thresholdless lasing in the regime of strong coupling between atom and radiation field. However, although theoretically predicted, a threshold at the single-atom level could not be experimentally observed so far. Here, we demonstrate and characterise a single-atom laser with and without threshold behaviour by changing the strength of atom-light field coupling. We observe the establishment of a laser threshold through the accumulation of photons in the optical mode even for a mean photon number substantially lower than for the classical case. Furthermore, self-quenching occurs for very strong external pumping and constitutes an intrinsic limitation of single-atom lasers. Moreover, we find that the statistical properties of the emitted light can be adjusted for weak external pumping, from the quantum to the classical domain. Our observations mark an important step towards fundamental understanding of laser operation in the few-atom limit including systems based on semiconductor quantum dots or molecules.

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preprint2010arXiv

Single photon emission from silicon-vacancy centres in CVD-nano-diamonds on iridium

We introduce a process for the fabrication of high quality, spatially isolated nano-diamonds on iridium via microwave plasma assisted CVD-growth. We perform spectroscopy of single silicon-vacancy (SiV)-centres produced during the growth of the nano-diamonds. The colour centres exhibit extraordinary narrow zero-phonon-lines down to 0.7 nm at room temperature. Single photon count rates up to 4.8 Mcps at saturation make these SiV-centres the brightest diamond based single photon sources to date. We measure for the first time the fine structure of a single SiV-centre thus confirming the atomic composition of the investigated colour centres.

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preprint2010arXiv

Single photon emitters based on Ni/Si related defects in single crystalline diamond

We present investigations on single Ni/Si related color centers produced via ion implantation into single crystalline type IIa CVD diamond. Testing different ion dose combinations we show that there is an upper limit for both the Ni and the Si dose 10^12/cm^2 and 10^10/cm^2 resp.) due to creation of excess fluorescent background. We demonstrate creation of Ni/Si related centers showing emission in the spectral range between 767nm and 775nm and narrow line-widths of 2nm FWHM at room temperature. Measurements of the intensity auto-correlation functions prove single-photon emission. The investigated color centers can be coarsely divided into two groups: Drawing from photon statistics and the degree of polarization in excitation and emission we find that some color centers behave as two-level, single-dipole systems whereas other centers exhibit three levels and contributions from two orthogonal dipoles. In addition, some color centers feature stable and bright emission with saturation count rates up to 78kcounts/s whereas others show fluctuating count rates and three-level blinking.

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preprint2010arXiv

Single-photon emission from Ni-related color centers in CVD diamond

Color centers in diamond are very promising candidates among the possible realizations for practical single-photon sources because of their long-time stable emission at room temperature. The popular nitrogen-vacancy center shows single-photon emission, but within a large, phonon-broadened spectrum (~100nm), which strongly limits its applicability for quantum communication. By contrast, Ni-related centers exhibit narrow emission lines at room temperature. We present investigations on single color centers consisting of Ni and Si created by ion implantation into single crystalline IIa diamond. We use systematic variations of ion doses between 10^8/cm^2 and 10^14/cm^2 and energies between 30keV and 1.8MeV. The Ni-related centers show emission in the near infrared spectral range (~770nm to 787nm) with a small line-width (~3nm FWHM). A measurement of the intensity correlation function proves single-photon emission. Saturation measurements yield a rather high saturation count rate of 77.9 kcounts/s. Polarization dependent measurements indicate the presence of two orthogonal dipoles.

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