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Christine Hu-Guo

Christine Hu-Guo contributes to research discovery and scholarly infrastructure.

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physics.ins-det hep-ex

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preprint2013arXiv

Charged particle detection performances of CMOS pixel sensors produced in a 0.18 um process with a high resistivity epitaxial layer

The apparatus of the ALICE experiment at CERN will be upgraded in 2017/18 during the second long shutdown of the LHC (LS2). A major motivation for this upgrade is to extend the physics reach for charmed and beauty particles down to low transverse momenta. This requires a substantial improvement of the spatial resolution and the data rate capability of the ALICE Inner Tracking System (ITS). To achieve this goal, the new ITS will be equipped with 50 um thin CMOS Pixel Sensors (CPS) covering either the 3 innermost layers or all the 7 layers of the detector. The CPS being developed for the ITS upgrade at IPHC (Strasbourg) is derived from the MIMOSA 28 sensor realised for the STAR-PXL at RHIC in a 0.35 um CMOS process. In order to satisfy the ITS upgrade requirements in terms of readout speed and radiation tolerance, a CMOS process with a reduced feature size and a high resistivity epitaxial layer should be exploited. In this respect, the charged particle detection performance and radiation hardness of the TowerJazz 0.18 um CMOS process were studied with the help of the first prototype chip MIMOSA 32. The beam tests performed with negative pions of 120 GeV/c at the CERN-SPS allowed to measure a signal-to-noise ratio (SNR) for the non-irradiated chip in the range between 22 and 32 depending on the pixel design. The chip irradiated with the combined dose of 1 MRad and 10^13 n_eq/cm^2 was observed to yield a SNR ranging between 11 and 23 for coolant temperatures varying from 15 C to 30 C. These SNR values were measured to result in particle detection efficiencies above 99.5% and 98% before and after irradiation respectively. These satisfactory results allow to validate the TowerJazz 0.18 um CMOS process for the ALICE ITS upgrade.

preprint2013arXiv

Optimisation of CMOS pixel sensors for high performance vertexing and tracking

CMOS Pixel Sensors tend to become relevant for a growing spectrum of charged particle detection instruments. This comes mainly from their high granularity and low material budget. However, several potential applications require a higher read-out speed and radiation tolerance than those achieved with available devices based on a 0.35 micrometers feature size technology. This paper shows preliminary test results of new prototype sensors manufactured in a 0.18 micrometers process based on a high resistivity epitaxial layer of sizeable thickness. Grounded on these observed performances, we discuss a development strategy over the coming years to reach a full scale sensor matching the specifications of the upgraded version of the Inner Tracking System (ITS) of the ALICE experiment at CERN, for which a sensitive area of up to about 10 square meters may be equipped with pixel sensors.

preprint2012arXiv

Development of CMOS Pixel Sensors fully adapted to the ILD Vertex Detector Requirements

CMOS Pixel Sensors are making steady progress towards the specifications of the ILD vertex detector. Recent developments are summarised, which show that these devices are close to comply with all major requirements, in particular the read-out speed needed to cope with the beam related background. This achievement is grounded on the double- sided ladder concept, which allows combining signals generated by a single particle in two different sensors, one devoted to spatial resolution and the other to time stamp, both assembled on the same mechanical support. The status of the development is overviewed as well as the plans to finalise it using an advanced CMOS process.

preprint2012arXiv

Development of Single- and Double-sided Ladders for the ILD Vertex Detectors

We discuss two projects exploring the integration of thin CMOS pixel sensors in order to prototype ladders matching the geometry needed for the ILD vertex detector. The PLUME project has designed and fabricated full-size and fully functional double- sided layers which currently reach 0.6 % X0 and aim for 0.3 % X0 in mid-2012. Another approach, SERNWIETE, consists in wrapping the sensors in a polyimide-based micro-cable to obtain a supportless single-sided ladder with a material budget around 0.15 % X0. First promising samples have been produced and the full-size prototype is expected in spring 2012.

preprint2010arXiv

Development of Fast and High Precision CMOS Pixel Sensors for an ILC Vertex Detector

The development of CMOS pixel sensors with column parallel read-out and integrated zero-suppression has resulted in a full size, nearly 1 Megapixel, prototype with ~100 μs read-out time. Its performances are quite close to the ILD vertex detector specifications, showing that the sensor architecture can presumably be evolved to meet these specifications exactly. Starting from the existing architecture and achieved performances, the paper will expose the details of how the sensor will be evolved in the coming 2-3 years in perspective of the ILD Detector Baseline Document, to be delivered in 2012. Two different devices are foreseen for this objective, one being optimized for the inner layers and their fast read-out requirement, while the other exploits the dimmed background in the outer layers to reduce the power consumption. The sensor evolution relies on a high resistivity epitaxial layer, on the use of an advanced CMOS process and on the combination of column-level ADCs with a pixel array. The paper will present how these aspects can be exploited to match the ILD VTX specifications. A status of the development of 3D CMOS devices will be mentioned for completeness.