Researcher profile

Christiano J. S. de Matos

Christiano J. S. de Matos contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2022arXiv

Exploring the structural and optoelectronic properties of natural insulating phlogopite in van der Waals heterostructures

Naturally occurring van der Waals crystals have brought unprecedented interest to nanomaterial researchers in recent years. So far, more than 1800 layered materials (LMs) have been identified but only a few insulating and naturally occurring LMs were deeply investigated. Phyllosilicate minerals, which are a class of natural and abundant LMs, have been recently considered as a low-cost source of insulating nanomaterials. Within this family an almost barely explored material emerges: phlogopite [KMg3(AlSi3)O10(OH)2]. Here we carry out a high throughput characterization of this LM by employing several experimental techniques, corroborating the major findings with first-principles calculations. We show that monolayers (1L) and few-layers of this material are air and temperature stable, as well as easily obtained by the standard mechanical exfoliation technique, have an atomically flat surface, and lower bandgap than its bulk counterpart, an unusual trend in LMs. We also systematically study the basic properties of ultrathin phlogopite and demonstrate that natural phlogopite presents iron impurities in its crystal lattice, which decreases its bandgap from about 7 eV to 3.6 eV. Finally, we combine phlogopite crystals with 1L-WS2 in ultrathin van der Waals heterostructures and present a photoluminescence study, revealing a significant enhancement on the 1L-WS2 optical quality (i.e., higher recombination efficiency through neutral excitons) similarly to that obtained on 1L-WS2/hBN heterostructures. Our proof-of-concept study shows that phlogopite should be regarded as a good and promising candidate for LM-based applications as a low-cost layered nanomaterial.

preprint2022arXiv

Relaxing graphene plasmon excitation constraints through the use of an epsilon-near-zero substrate

Graphene plasmons have attracted significant attention due to their tunability, potentially long propagation lengths and ultracompact wavelengths. However, the latter characteristic imposes challenges to light-plasmon coupling in practical applications, generally requiring sophisticated coupling setups, extremely high doping levels and/or graphene nanostructuting close to the resolution limit of current lithography techniques. Here, we propose and theoretically demonstrate a method for alleviating such a technological strain through the use of a practical substrate whose low and negative dielectric function naturally enlarges the graphene polariton wavelength to more manageable levels. We consider silicon carbide (SiC), as it exhibits a dielectric function whose real part is between -1 and 0, while its imaginary part remains lower than 0.05, in the 951 to 970 cm$^{-1}$ mid-infrared spectral range. Our calculations show hybridization with the substrate's phonon polariton, resulting in a polariton wavelenth that is an order of magnitude longer than obtained with a silicon dioxide substrate, while the propagation length increases by the same amount.

preprint2015arXiv

Graphene Based Waveguide Polarizers: In-Depth Physical Analysis and Relevant Parameters

Optical polarizing devices exploiting graphene embedded in waveguides have been demonstrated in the literature recently and both the TE- and TM-pass behaviors were reported. The determination of the passing polarization is usually attributed to graphene's Fermi level (and, therefore, doping level), with, however, no direct confirmation of this assumption provided. Here we show, through numerical simulation, that rather than graphene's Fermi level, the passing polarization is determined by waveguide parameters, such as the superstrate refractive index and the waveguide's height. The results provide a consistent explanation for experimental results reported in the literature. In addition, we show that with an accurate graphene modeling, a waveguide cannot be switched between TE pass and TM pass via Fermi level tuning. Therefore, the usually overlooked contribution of the waveguide design is shown to be essential for the development of optimized TE- or TM-pass polarizers, which we show to be due to the control it provides on the fraction of the electric field that is tangential to graphene.