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Christian Scharf

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hep-ex physics.ins-det

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preprint2020arXiv

The ABC130 barrel module prototyping programme for the ATLAS strip tracker

For the Phase-II Upgrade of the ATLAS Detector, its Inner Detector, consisting of silicon pixel, silicon strip and transition radiation sub-detectors, will be replaced with an all new 100 % silicon tracker, composed of a pixel tracker at inner radii and a strip tracker at outer radii. The future ATLAS strip tracker will include 11,000 silicon sensor modules in the central region (barrel) and 7,000 modules in the forward region (end-caps), which are foreseen to be constructed over a period of 3.5 years. The construction of each module consists of a series of assembly and quality control steps, which were engineered to be identical for all production sites. In order to develop the tooling and procedures for assembly and testing of these modules, two series of major prototyping programs were conducted: an early program using readout chips designed using a 250 nm fabrication process (ABCN-25) and a subsequent program using a follow-up chip set made using 130 nm processing (ABC130 and HCC130 chips). This second generation of readout chips was used for an extensive prototyping program that produced around 100 barrel-type modules and contributed significantly to the development of the final module layout. This paper gives an overview of the components used in ABC130 barrel modules, their assembly procedure and findings resulting from their tests.

preprint2015arXiv

Measurement of the drift velocities of electrons and holes in high-ohmic <100> silicon

Measurements of the drift velocities of electrons and holes as functions of electric field and temperature in high-purity n- and p-type silicon with <100> orientation are presented. The measurements cover electric field values between 2.5 and 50 kV/cm and temperatures between 233 and 333 K. For both electrons and holes differences of more than 15 % are found between our <100> results and the <111> drift velocities from literature, which are frequently also used for simulating <100> sensors. For electrons, the <100> results agree with previous <100> measurements, however, for holes differences between 5 to 15 % are observed for fields above 10 kV/cm. Combining our results with published data of low-field mobilities, we derive parametrizations of the drift velocities in high-ohmic <100> silicon for electrons and holes for fields between 0 and 50 kV/cm, and temperatures between 233 and 333 K. In addition, new parametrizations for the drift velocities for electrons and holes are introduced, which provide somewhat better descriptions of existing data for <111> silicon, than the standard parametrization.

preprint2014arXiv

Determination of the electronics transfer function for current transient measurements

We describe a straight-forward method for determining the transfer function of the readout of a sensor for the situation in which the current transient of the sensor can be precisely simulated. The method relies on the convolution theorem of Fourier transforms. The specific example is a planar silicon pad diode connected with a 50 $Ω$ cable to an amplifier followed by a 5 GS/s sampling oscilloscope. The charge carriers in the sensor were produced by picosecond lasers with light of wavelengths of 675 and 1060 nm. The transfer function is determined from the 1060 nm data with the pad diode biased at 1000 V. It is shown that the simulated sensor response convoluted with this transfer function provides an excellent description of the measured transients for the laser light of both wavelengths, at voltages 50 V above the depletion voltage of about 90 V up to the maximum applied voltage of 1000 V. The method has been developed for the precise measurement of the dependence of the drift velocity of electrons and holes in high-ohmic silicon on crystal orientation, electric field and temperature. It can also be applied for the analysis of transient-current measurements of radiation-damaged solid state sensors, as long as sensors properties, like high-frequency capacitance, are not too different.