Researcher profile

Christian Heyn

Christian Heyn contributes to research discovery and scholarly infrastructure.

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Published work

7 published item(s)

preprint2016arXiv

Three-Terminal Energy Harvester with Coupled Quantum Dots

Rectification of thermal fluctuations in mesoscopic conductors is the key idea of today's attempts to build nanoscale thermoelectric energy harvesters in order to convert heat into a useful electric power. So far, most concepts make use of the Seebeck effect in a two-terminal geometry where heat and charge are both carried by the same particles. Here, we experimentally demonstrate the working principle of a new kind of energy harvester, proposed recently using two capacitively coupled quantum dots. We show that due to its novel three-terminal design which spatially separates the heat reservoir from the conductor circuit, the directions of charge and heat flow become decoupled in our device. This enables us to manipulate the direction of the generated charge current by means of external gate voltages while leaving the direction of heat flow unaffected. Our results pave the way for a new generation of multi-terminal, highly efficient nanoscale heat engines.

preprint2015arXiv

Thermal Gating of Charge Currents with Coulomb Coupled Quantum Dots

We have observed thermal gating, i.e. electrostatic gating induced by hot electrons. The effect occurs in a device consisting of two capacitively coupled quantum dots. The double dot system is coupled to a hot electron reservoir on one side (QD1), whilst the conductance of the second dot (QD2) is monitored. When a bias across QD2 is applied we observe a current which is strongly dependent on the temperature of the heat reservoir. This current can be either enhanced or suppressed, depending on the relative energetic alignment of the QD levels. Thus, the system can be used to control a charge current by hot electrons.

preprint2013arXiv

Guided Neuronal Growth on Arrays of Biofunctionalized GaAs/InGaAs Semiconductor Microtubes

We demonstrate embedded growth of cortical mouse neurons in dense arrays of semiconductor microtubes. The microtubes, fabricated from a strained GaAs/InGaAs heterostructure, guide axon growth through them and enable electrical and optical probing of propagating action potentials. The coaxial nature of the microtubes -- similar to myelin -- is expected to enhance the signal transduction along the axon. We present a technique of suppressing arsenic toxicity and prove the success of this technique by overgrowing neuronal mouse cells.

preprint2011arXiv

Gain in Three-Dimensional Metamaterials utilizing Semiconductor Quantum Structures

We demonstrate gain in a three-dimensional metal/semiconductor metamaterial by the integration of optically active semiconductor quantum structures. The rolling-up of a metallic structure on top of strained semiconductor layers containing a quantum well allows us to achieve a three-dimensional superlattice consisting of alternating layers of lossy metallic and amplifying gain material. We show that the transmission through the superlattice can be enhanced by exciting the quantum well optically under both pulsed or continuous wave excitation. This points out that our structures can be used as a starting point for arbitrary three-dimensional metamaterials including gain.

preprint2011arXiv

Thermal Conductance of Ballistic Point Contacts

We study the thermal conductance of ballistic point contacts. These contacts are realized as few nanometer long pillars in so called air-gap heterostructures (AGHs). The pillar length being much smaller that the mean free path of the phonons up to room temperature. Due to the small dimension and the low density of the pillars the thermal conductance of the AGHs is several orders of magnitude reduced in comparison to bulk structures. The measurement results are in quantitative agreement with a simple model that based on the Boltzmann transport equation.

preprint2010arXiv

Elementary excitations in charge-tunable InGaAs quantum dots studied by resonant Raman and resonant photoluminescence spectroscopy

We report on resonant optical spectroscopy of self-assembled InGaAs quantum dots in which the number of electrons can accurately be tuned to N=0,1,2 by an external gate voltage. Polarization, wave vector and magnetic field dependent measurements enable us to clearly distinguish between resonant Raman and resonant photoluminescence processes. The Raman spectra for N=1 and 2 electrons considerably differ from each other. In particular, for N=2, the quantum-dot He, the spectra exhibit both singlet and triplet transitions reflecting the elementary many-particle interaction. Also the resonant photoluminescence spectra are significantly changing by varying the number of electrons in the QDs. For N=1 we observe strong polaronic effects which are suppressed for N=2.