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Christian Ertler

Christian Ertler appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallComputer Visionquant-ph

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Published work

8 published item(s)

preprint2020arXiv

The Mapillary Traffic Sign Dataset for Detection and Classification on a Global Scale

Traffic signs are essential map features globally in the era of autonomous driving and smart cities. To develop accurate and robust algorithms for traffic sign detection and classification, a large-scale and diverse benchmark dataset is required. In this paper, we introduce a traffic sign benchmark dataset of 100K street-level images around the world that encapsulates diverse scenes, wide coverage of geographical locations, and varying weather and lighting conditions and covers more than 300 manually annotated traffic sign classes. The dataset includes 52K images that are fully annotated and 48K images that are partially annotated. This is the largest and the most diverse traffic sign dataset consisting of images from all over world with fine-grained annotations of traffic sign classes. We have run extensive experiments to establish strong baselines for both the detection and the classification tasks. In addition, we have verified that the diversity of this dataset enables effective transfer learning for existing large-scale benchmark datasets on traffic sign detection and classification. The dataset is freely available for academic research: https://www.mapillary.com/dataset/trafficsign.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Electric control of tunneling energy in graphene double dots

We theoretically investigate the spectrum of a single electron double quantum dot, defined by top gates in a graphene with a substrate induced gap. We examine the effects of electric and magnetic fields on the spectrum of localized states, focusing on the tunability of the inter-dot coupling. We find that the substrate induced gap allows for electrostatic control, with some limitations that for a fixed inter-dot distance, the inter-dot coupling can not be made arbitrarily small due to the Klein tunneling. On the other hand, the proximity of the valence band in graphene allows for new regimes, such as an $npn$ double dot, which have no counterparts in GaAs.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Gate-defined coupled quantum dots in topological insulators

We consider electrostatically coupled quantum dots in topological insulators, otherwise confined and gapped by a magnetic texture. By numerically solving the (2+1) Dirac equation for the wave packet dynamics, we extract the energy spectrum of the coupled dots as a function of bias-controlled coupling and an external perpendicular magnetic field. We show that the tunneling energy can be controlled to a large extent by the electrostatic barrier potential. Particularly interesting is the coupling via Klein tunneling through a resonant valence state of the barrier. The effective three-level system nicely maps to a model Hamiltonian, from which we extract the Klein coupling between the confined conduction and valence dots levels. For large enough magnetic fields Klein tunneling can be completely blocked due to the enhanced localization of the degenerate Landau levels formed in the quantum dots.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Surface plasmons in doped topological insulators

We investigate surface plasmons at a planar interface between a normal dielectric and a topological insulator, where the Fermi-energy lies inside the bulk gap of the topological insulator and gives rise to a two-dimensional charge distribution of free Dirac electrons. We develop the methodology for the calculation of plasmon dispersions, using the framework of classical electrodynamics, with modified constituent equations due to Hall currents in the topological insulator, together with a Lindhard-type description for the two-dimensional charge distribution of free Dirac electrons. For a system representative for Bi$_2$X$_3$ binary compounds, we find in agreement with recent related work that the modified constituent equations have practically no impact on the surface plasmon dispersion but lead to a rotation of the magnetic polarization of surface plasmons out of the interface plane.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Dirac fermion wave guide networks on topological insulator surfaces

Magnetic texturing on the surface of a topological insulator allows the design of wave guide networks and beam splitters for domain-wall Dirac fermions. Guided by simple analytic arguments we model a Dirac fermion interferometer consisting of two parallel pathways, whereby a newly developed staggered-grid leap-frog discretization scheme in 2+1 dimensions with absorbing boundary conditions is employed. The net transmission can be tuned between constructive to destructive interference, either by variation of the magnetization (path length) or an applied bias (wave length). Based on this principle, a Dirac fermion transistor is proposed. Extensions to more general networks are discussed.

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preprint2011arXiv

Bias-induced destruction of ferromagnetism and disorder effects in GaMnAs heterostructures

The magneto-electric properties of resonant tunneling double barrier structures using GaMnAs for the quantum well is investigated within a self-consistent Green's function approach and a tight-binding electronic structure model. The magnetic state of the well is determined self-consistently by the tunneling current which controls the hole spin density and, hence, the degree of exchange splitting of the subbands inside the well. Prompted by recent experiments we compare model systems of increasing defect concentration (substitutional disorder) regarding their I-V curve, magnetic state, and spin polarization. We predict that, near resonance, the ferromagnetic order which may be present at zero bias in the GaMnAs well tends to be destroyed. Resonance peaks are found to be more sensitive to disorder than ferromagnetic ordering and spin polarization of the steady-state current.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Electrical control of ferromagnetism in Mn-doped semiconductor heterostructures

The interplay of tunneling transport and carrier-mediated ferromagnetism in narrow semiconductor multi-quantum well structures containing layers of GaMnAs is investigated within a self-consistent Green's function approach, accounting for disorder in the Mn--doped regions and unwanted spin-flips at heterointerfaces on phenomenological ground. We find that the magnetization in GaMnAs layers can be controlled by an external electric bias. The underlying mechanism is identified as spin-selective hole tunneling in and out of the Mn-doped quantum wells, whereby the applied bias determines both hole population and spin polarization in these layers. In particular we predict that, near resonance, ferromagnetic order in the Mn doped quantum wells is destroyed. The interplay of both magnetic and transport properties combined with structural design potentially leads to several interrelated physical phenomena, such as dynamic spin filtering, electrical control of magnetization in individual magnetic layers, and, under specific bias conditions, to self-sustained current and magnetization oscillations (magneticmulti-stability). Relevance to recent experimental results is discussed.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Proposal for a ferromagnetic multiwell spin oscillator

The highly nonlinear coupling of transport and magnetic properties in a multiwell heterostructure, which comprises ferromagnetic quantum wells made of diluted magnetic semiconductors, is theoretically investigated. The interplay of resonant tunneling and carrier-mediated ferromagnetism in the magnetic wells induces very robust, self-sustained current and magnetization oscillations. Over a large window of steady bias voltages the spin polarization of the collector current is oscillating between positive and negative values, realizing a spin oscillator device.

0 citations0 reviewsNo code linkedOpen access