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Christian Bernhard

Christian Bernhard contributes to research discovery and scholarly infrastructure.

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Published work

4 published item(s)

preprint2026arXiv

Assessment of RAG and Fine-Tuning for Industrial Question-Answering-Applications

Large Language Models (LLMs) are increasingly employed in enterprise question-answering (QA) systems, requiring adaptation to domain-specific knowledge. Among the most prevalent methods for incorporating such knowledge are Retrieval-Augmented Generation (RAG) and fine-tuning (FT). Yet, from a cost-accuracy trade-off perspective, it remains unclear which approach best suits industry scenarios. This study examines the impact of RAG and FT on two closed datasets specific to the automotive industry, assessing answer quality and operational costs. We extend the Cost-of-Pass framework proposed by Erol et al. (arXiv:2504.13359) to jointly assess output quality, generation cost, and user interaction cost. Our findings reveal that while premium models perform best out of the box, open-source models can achieve comparable quality when enhanced with RAG. Overall, RAG emerges as the most effective and cost-efficient adaptation method for both closed- and open-source models.

preprint2021arXiv

Non-collinear and strongly asymmetric polar moments at back-gated SrTiO3 interfaces

The highly mobile electrons at the interface of SrTiO3 with other oxide insulators, such as LaAlO3 or AlOx, are of great current interest. A vertical gate voltage allows controlling a metal/superconductor-to-insulator transition, as well as electrical modulation of the spin-orbit Rashba coupling for spin-charge conversion. These findings raise important questions about the origin of the confined electrons as well as the mechanisms that govern the interfacial electric field. Here we use infrared ellipsometry and confocal Raman spectroscopy to show that an anomalous polar moment is induced at the interface that is non-collinear, highly asymmetric and hysteretic with respect to the vertical gate electric field. Our data indicate that an important role is played by the electromigration of oxygen vacancies and their clustering at the antiferrodistortive domain boundaries of SrTiO3, which generates local electric and possibly also flexoelectric fields and subsequent polar moments with a large lateral component. Our results open new perspectives for the defect engineering of lateral devices with strongly enhanced and hysteretic local electric fields that can be manipulated with various other parameters, like strain, temperature, or photons.

preprint2020arXiv

Electron-Phonon-Driven Three-Dimensional Metallicity in an Insulating Cuprate

The role of the crystal lattice for the electronic properties of cuprates and other high-temperature superconductors remains controversial despite decades of theoretical and experimental efforts. While the paradigm of strong electronic correlations suggests a purely electronic mechanism behind the insulator-to-metal transition, recently the mutual enhancement of the electron-electron and the electron-phonon interaction and its relevance to the formation of the ordered phases have also been emphasized. Here, we combine polarization-resolved ultrafast optical spectroscopy and state-of-the-art dynamical mean-field theory to show the importance of the crystal lattice in the breakdown of the correlated insulating state in an archetypal undoped cuprate. We identify signatures of electron-phonon coupling to specific fully-symmetric optical modes during the build-up of a three-dimensional metallic state that follows charge photodoping. Calculations for coherently displaced crystal structures along the relevant phonon coordinates indicate that the insulating state is remarkably unstable toward metallization despite the seemingly large charge-transfer energy scale. This hitherto unobserved insulator-to-metal transition mediated by fully-symmetric lattice modes can find extensive application in a plethora of correlated solids.

preprint2020arXiv

Infrared study of the multiband low-energy excitations of the topological antiferromagnet MnBi$_2$Te$_4$

With infrared spectroscopy we studied the bulk electronic properties of the topological antiferromagnet MnBi$_2$Te$_4$ with $T_N \simeq 25~\mathrm{K}$. With the support of band structure calculations, we assign the intra- and interband excitations and determine the band gap of $E_g \approx$ 0.17 eV. We also obtain evidence for two types of conduction bands with light and very heavy carriers. The multiband free carrier response gives rise to an unusually strong increase of the combined plasma frequency, $ω_{\mathrm{pl}}$, below 300 K. The band reconstruction below $T_N$, yields an additional increase of $ω_{\mathrm{pl}}$ and a splitting of the transition between the two conduction bands by about 54 meV. Our study thus reveals a complex and strongly temperature dependent multi-band low-energy response that has important implications for the study of the surface states and device applications.