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Christian Bernhard

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Published work

9 published item(s)

preprint2026arXiv

Assessment of RAG and Fine-Tuning for Industrial Question-Answering-Applications

Large Language Models (LLMs) are increasingly employed in enterprise question-answering (QA) systems, requiring adaptation to domain-specific knowledge. Among the most prevalent methods for incorporating such knowledge are Retrieval-Augmented Generation (RAG) and fine-tuning (FT). Yet, from a cost-accuracy trade-off perspective, it remains unclear which approach best suits industry scenarios. This study examines the impact of RAG and FT on two closed datasets specific to the automotive industry, assessing answer quality and operational costs. We extend the Cost-of-Pass framework proposed by Erol et al. (arXiv:2504.13359) to jointly assess output quality, generation cost, and user interaction cost. Our findings reveal that while premium models perform best out of the box, open-source models can achieve comparable quality when enhanced with RAG. Overall, RAG emerges as the most effective and cost-efficient adaptation method for both closed- and open-source models.

preprint2021arXiv

Non-collinear and strongly asymmetric polar moments at back-gated SrTiO3 interfaces

The highly mobile electrons at the interface of SrTiO3 with other oxide insulators, such as LaAlO3 or AlOx, are of great current interest. A vertical gate voltage allows controlling a metal/superconductor-to-insulator transition, as well as electrical modulation of the spin-orbit Rashba coupling for spin-charge conversion. These findings raise important questions about the origin of the confined electrons as well as the mechanisms that govern the interfacial electric field. Here we use infrared ellipsometry and confocal Raman spectroscopy to show that an anomalous polar moment is induced at the interface that is non-collinear, highly asymmetric and hysteretic with respect to the vertical gate electric field. Our data indicate that an important role is played by the electromigration of oxygen vacancies and their clustering at the antiferrodistortive domain boundaries of SrTiO3, which generates local electric and possibly also flexoelectric fields and subsequent polar moments with a large lateral component. Our results open new perspectives for the defect engineering of lateral devices with strongly enhanced and hysteretic local electric fields that can be manipulated with various other parameters, like strain, temperature, or photons.

preprint2020arXiv

Electron-Phonon-Driven Three-Dimensional Metallicity in an Insulating Cuprate

The role of the crystal lattice for the electronic properties of cuprates and other high-temperature superconductors remains controversial despite decades of theoretical and experimental efforts. While the paradigm of strong electronic correlations suggests a purely electronic mechanism behind the insulator-to-metal transition, recently the mutual enhancement of the electron-electron and the electron-phonon interaction and its relevance to the formation of the ordered phases have also been emphasized. Here, we combine polarization-resolved ultrafast optical spectroscopy and state-of-the-art dynamical mean-field theory to show the importance of the crystal lattice in the breakdown of the correlated insulating state in an archetypal undoped cuprate. We identify signatures of electron-phonon coupling to specific fully-symmetric optical modes during the build-up of a three-dimensional metallic state that follows charge photodoping. Calculations for coherently displaced crystal structures along the relevant phonon coordinates indicate that the insulating state is remarkably unstable toward metallization despite the seemingly large charge-transfer energy scale. This hitherto unobserved insulator-to-metal transition mediated by fully-symmetric lattice modes can find extensive application in a plethora of correlated solids.

preprint2020arXiv

Infrared study of the multiband low-energy excitations of the topological antiferromagnet MnBi$_2$Te$_4$

With infrared spectroscopy we studied the bulk electronic properties of the topological antiferromagnet MnBi$_2$Te$_4$ with $T_N \simeq 25~\mathrm{K}$. With the support of band structure calculations, we assign the intra- and interband excitations and determine the band gap of $E_g \approx$ 0.17 eV. We also obtain evidence for two types of conduction bands with light and very heavy carriers. The multiband free carrier response gives rise to an unusually strong increase of the combined plasma frequency, $ω_{\mathrm{pl}}$, below 300 K. The band reconstruction below $T_N$, yields an additional increase of $ω_{\mathrm{pl}}$ and a splitting of the transition between the two conduction bands by about 54 meV. Our study thus reveals a complex and strongly temperature dependent multi-band low-energy response that has important implications for the study of the surface states and device applications.

preprint2015arXiv

Infrared ellipsometry study of the confined electrons in a high-mobility $γ$-Al$_2$O$_3$/SrTiO$_3$ heterostructure

With infrared ellipsometry we studied the response of the confined electrons in a $γ$-Al$_2$O$_3$/SrTiO$_3$ heterostructures in which they originate predominantly from oxygen vacancies. From the analysis of a so-called Berreman mode, that develops near the highest longitudinal optical phonon mode of SrTiO$_3$, we derive the sheet carrier density, ${N_{s}}$, the mobility, $μ$, and also the depth profile of the carrier concentration. Notably, we find that ${N_{s}}$ and the shape of the depth profile are similar as in LaAlO$_3$/SrTiO$_3$ heterostructures for which the itinerant carriers are believed to arise from a polar discontinuity. The main differences concern the higher mobility and a relatively stronger confinement of the electrons in $γ$-Al$_2$O$_3$/SrTiO$_3$

preprint2015arXiv

Infrared study of the spin reorientation transition and its reversal in the superconducting state in underdoped Ba$ _{1-x} $K$ _{x} $Fe$ _{2} $As$ _{2} $

With infrared spectroscopy we investigated the spin-reorientation transition from an orthorhombic antiferromagnetic (o-AF) to a tetragonal AF (t-AF) phase and the reentrance of the o-AF phase in the superconducting state of underdoped Ba$ _{1-x} $K$ _{x} $Fe$ _{2} $As$ _{2} $. In agreement with the predicted transition from a single-$\mathbf{Q}$ to a double-$\mathbf{Q}$ AF structure, we found that a distinct spin density wave (SDW) develops in the t-AF phase. The pair breaking peak of this SDW acquires much more low-energy spectral weight than the one in the o-AF state which indicates that it competes more strongly with superconductivity. We also observed additional phonon modes in the t-AF phase which likely arise from a Brillouin-zone folding that is induced by the double-$\mathbf{Q}$ magnetic structure with two Fe sublattices exhibiting different magnitudes of the magnetic moment.

preprint2015arXiv

Terahertz ellipsometry study of the soft mode behavior in ultrathin SrTiO3 films

We present a combined study with conventional far-infrared and time-domain terahertz ellipsometry of the temperature dependent optical response of SrTiO3 thin films (85 and 8.5 nm) that are grown by pulsed-laser deposition on LSAT substrates. We demonstrate that terahertz ellipsometry is very sensitive to the optical response of these thin films, in particular, to the soft mode of SrTiO3. We show that for the 85 nm film the eigenfrequency of the soft mode is strongly reduced by annealing at 1200 C, whereas for the 8.5 nm film it is hardy affected. For the latter, after annealing the mode remains at 125 cm-1 at 300 K and exhibits only a weak softening to about 90 cm-1 at 10 K. This suggests that this ultrathin film undergoes hardly any relaxation of the compressive strain due to the LSAT substrate.

preprint2014arXiv

Influence of La and Mn vacancies on the electronic and magnetic properties of LaMnO$_{3}$ thin films grown by pulsed laser deposition

With pulsed laser deposition we have grown c-axis oriented thin films of the nominal composition LaMnO$_{3}$ (LMO) on LSAT(001) substrates. We find that, depending on the oxygen background pressure during growth, the LMO films contain sizeable amounts of La and/or Mn vacancies that strongly influence their electronic and magnetic properties. Specifically, we show that the Mn/La ratio can be systematically varied from 0.92 at 0.11 mbar to 1.09 at 0.30 mbar of oxygen. These cationic vacancies lead to markedly different disorder effects that become most pronounced once the samples are fully oxygenated and thus strongly hole doped. All as-grown and thus slightly oxygen deficient LMO films are ferromagnetic insulators with saturation moments in excess of 2.5 μ$_{B}$ per Mn ion, their transport and optical properties that can be understood in terms of trapped ferromagnetic polarons. Upon oxygen annealing, the most La-deficient films develop a metallic response with an even larger ferromagnetic saturation moment of 3.8 μ$_{B}$ per Mn ion. In contrast, in the oxygenated Mn-deficient films the ferromagnetic order is almost completely suppressed to less than 0.5 μ$_{B}$ per Mn ion and the transport remains insulator-like. We compare our results with the ones that were previously obtained on bulk samples and present an interpretation in terms of the much stronger disorder potential of the Mn vacancies as compared to the La vacancies. We also discuss the implications for the growth of LMO thin films with well-defined physical properties that, for example, are a prerequisite for the study of interface effects in multilayers.

preprint2010arXiv

Electron spin relaxation in organic semiconductors probed through muSR

Muon spin spectroscopy and in particular the avoided level crossing technique is introduced, with the aim of showing it as a very sensitive local probe for electron spin relaxation in organic semiconductors. Avoided level crossing data on TMS-pentacene at different temperatures are presented, and they are analysed to extract the electron spin relaxation rate, that is shown to increase on increasing the temperature from 0.02 MHz to 0.33 MHz at 3 K and 300 K respectively.