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Chorng Haur Sow

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Published work

4 published item(s)

preprint2022arXiv

Heteromoiré Engineering on Magnetic Bloch Transport in Twisted Graphene Superlattices

Localized electrons subject to applied magnetic fields can restart to propagate freely through the lattice in delocalized magnetic Bloch states (MBSs) when the lattice periodicity is commensurate with the magnetic length. Twisted graphene superlattices with moiré wavelength tunability enable experimental access to the unique delocalization in a controllable fashion. Here we report the observation and characterization of high-temperature Brown-Zak (BZ) oscillations which come in two types, 1/B and B periodicity, originating from the generation of integer and fractional MBSs, in the twisted bilayer and trilayer graphene superlattices, respectively. Coexisting periodic-in-1/B oscillations assigned to different moiré wavelengths, are dramatically observed in small-angle twisted bilayer graphene, which may arise from angle-disorder-induced in-plane heteromoiré superlattices. Moreover, the vertical stacking of heteromoiré supercells in double-twisted trilayer graphene results in a mega-sized superlattice. The exotic superlattice contributes to the periodic-in-B oscillation and dominates the magnetic Bloch transport.

preprint2015arXiv

Synthesis and characterization of vertically oriented hybrid Zn2GeO4-ZnO beaded nanowire arrays and Zn2GeO4 nanotubes

Vertically aligned, beaded zinc germinate (Zn2GeO4)/ zinc oxide (ZnO) hybrid nanowire arrays were successfully synthesized by a vapor-solid process via a catalyst-free approach. The as-synthesized products were characterized using X-ray diffraction, scanning electron microscopy and transmission electron microscopy equipped with an energy-dispersive X-ray spectrometer. TEM studies revealed the beaded microstructures of the Zn2GeO4/ZnO nanowire. Furthermore, Zn2GeO4 nanotubes were synthesized after wet etching treatments on Zn2GeO4/ZnO hybrid nanowires.

preprint2013arXiv

Direct Laser Micropatterning of GeSe2 Nanostructures with Controlled Optoelectrical Properties

We demonstrate that a direct focused laser beam irradiation is able to achieve localized modification on GeSe2 nanostructures (NSs) film. Using scanning focused laser beam setup, micropatterns on GeSe2 NSs film are created directly on the substrate. Controlled structural and chemical changes of the NSs are achieved by varying laser power and treatment environment. The laser modified GeSe2 NSs exhibit distinct optical, electrical and optoelectrical properties. Detailed characterization is carried out and the possible mechanisms for the laser induced changes are discussed. The laser modified NSs film shows superior photoconductivity properties as compared to the pristine nanostructure film. The construction of micropatterns with improved functionality could prove to be useful in miniature optoelectrical devices.

preprint2013arXiv

Photocurrent characteristics of individual GeSe2 nanobelt with Schottky effects

Single crystal GeSe2 nanobelts (NBs) were successfully grown using chemical vapor deposition techniques. The morphology and structure of the nanostructures were characterized using scanning electron microscopy, transmission electron microscopy, X-ray diffractometry, and Raman spectroscopy. Electronic transport properties, photoconductive characteristics, and temperature-dependent electronic characteristics were examined on devices made of individual GeSe2 nanobelt. Localized photoconductivity study shows that the large photoresponse of the device primarily occurs at the metal-NB contact regions. In addition, the electrically Schottky nature of nanobelt-Au contact and p-type conductivity nature of GeSe2 nanobelt are extracted from the current-voltage characteristics and spatially resolved photocurrent measurements. The high sensitivity and quick photoresponse in the visible wavelength range indicate potential applications of individual GeSe2 nanobelt devices in realizing optoelectronic switches.