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ChiYung Yam

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Published work

8 published item(s)

preprint2023arXiv

Predictions of photophysical properties of phosphorescent platinum(II) complexes based on ensemble machine learning approach

Phosphorescent metal complexes have been under intense investigations as emissive dopants for energy efficient organic light emitting diodes (OLEDs). Among them, cyclometalated Pt(II) complexes are widespread triplet emitters with color-tunable emissions. To render their practical applications as OLED emitters, it is in great need to develop Pt(II) complexes with high radiative decay rate constant ($k_r$) and photoluminescence (PL) quantum yield. Thus, an efficient and accurate prediction tool is highly desirable. Here, we develop a general protocol for accurate predictions of emission wavelength, radiative decay rate constant, and PL quantum yield for phosphorescent Pt(II) emitters based on the combination of first-principles quantum mechanical method, machine learning (ML) and experimental calibration. A new dataset concerning phosphorescent Pt(II) emitters is constructed, with more than two hundred samples collected from the literature. Features containing pertinent electronic properties of the complexes are chosen. Our results demonstrate that ensemble learning models combined with stacking-based approaches exhibit the best performance, where the values of squared correlation coefficients ($R^2$), mean absolute error (MAE), and root mean square error (RMSE) are 0.96, 7.21 nm and 13.00 nm for emission wavelength prediction, and 0.81, 0.11 and 0.15 for PL quantum yield prediction. For radiative decay rate constant ($k_r$), the obtained value of $R^2$ is 0.67 while MAE and RMSE are 0.21 and 0.25 (both in log scale), respectively. The accuracy of the protocol is further confirmed using 24 recently reported Pt(II) complexes, which demonstrates its reliability for a broad palette of Pt(II) emitters.We expect this protocol will become a valuable tool, accelerating the rational design of novel OLED materials with desired properties.

preprint2015arXiv

Dissipative quantum transport at arbitrary parameter regime: a variational method

Recent development of theoretical method for dissipative quantum transport have achieved notable progresses in the weak or strong electron-phonon coupling regime. However, a generalized theory for dissipative quantum transport at arbitrary parameter regime is not figured out until now. In this work, a variational method for dissipative quantum transport at arbitrary electron-phonon coupling regime is developed by employing variational polaron theory. The optimal polaron transformation is determined by the optimization of the Feynman-Bogoliubov upper bound of free energy. % which is variational in nature. The free energy minimization ends up with an optimal mean-field Hamiltonian and a minimal interaction Hamiltonian. Hence, second-order perturbation can be applied to the transformed system, resulting an accurate and efficient method for the treatment of dissipative quantum transport with arbitrary electron-phonon coupling strength. Numerical benchmark calculation on an single site model with coupling to one phonon mode is also presented.

preprint2015arXiv

Dissipative time-dependent quantum transport theory: quantum interference and phonon induced decoherence dynamics

A time-dependent inelastic electron transport theory for strong electron-phonon interaction is established via the equations of motion method combined with the small polaron transformation. In this work, the dissipation via electron-phonon coupling is taken into account in the strong coupling regime, which validates the small polaron transformation. The corresponding equations of motion are developed, which are used to study the quantum interference effect and phonon-induced decoherence dynamics in molecular junctions. Numerical studies show clearly quantum interference effect of the transport electrons through two quasi-degenerate states with different coupling to the leads. We also found that the quantum interference can be suppressed by the electron-phonon interaction where the phase coherence is destroyed by phonon scattering. This indicates the importance of electron-phonon interaction in systems with prominent quantum interference effect.

preprint2015arXiv

Quantum Mechanical Modeling of Nanoscale Light Emitting Diodes

Understanding of the electroluminescence (EL) mechanism in optoelectronic devices is important for further optimization of their efficiency and effectiveness. Here, a quantum mechanical approach is formulated for modeling EL processes in nanoscale light emitting diodes (LED). Based on nonequilibrium Green's function quantum transport equations, interactions with electromagnetic vacuum environment is included to describe electrically driven light emission in the devices. Numerical studies of a silicon nanowire LED device are presented. EL spectra of the nanowire device under different bias voltages are simulated and, more importantly, propagation and polarization of emitted photon can be determined using the current approach.

preprint2014arXiv

An Approximate Framework for Quantum Transport Calculation with Model Order Reduction

A new approximate computational framework is proposed for computing the non-equilibrium charge density in the context of the non-equilibrium Green's function (NEGF) method for quantum mechanical transport problems. The framework consists of a new formulation, called the X-formulation, for single-energy density calculation based on the solution of sparse linear systems, and a projection-based nonlinear model order reduction (MOR) approach to address the large number of energy points required for large applied biases. The advantages of the new methods are confirmed by numerical experiments.

preprint2013arXiv

A gauge-invariant and current-continuous microscopic ac quantum transport theory

There had been consensus on what the accurate ac quantum transport theory was until some recent works challenged the conventional wisdom. Basing on the non-equilibrium Green's function formalism for time-dependent quantum transport, we derive an expression for the dynamic admittance that satisfies gauge invariance and current continuity, and clarify the key concept in the field. The validity of our now formalism is verified by first-principles calculation of the transient current through a carbon-nanotube-based device under the time-dependent bias voltage. Moreover, the previously well-accepted expression for dynamic admittance is recovered only when the device is a perfect conductor at a specific potential.

preprint2011arXiv

Time-dependent versus static quantum transport simulations beyond linear response

To explore whether the density-functional theory non-equilibrium Green's function formalism (DFT-NEGF) provides a rigorous framework for quantum transport, we carried out time-dependent density functional theory (TDDFT) calculations of the transient current through two realistic molecular devices, a carbon chain and a benzenediol molecule inbetween two aluminum electrodes. The TDDFT simulations for the steady state current exactly reproduce the results of fully self-consistent DFT-NEGF calculations even beyond linear response. In contrast, sizable differences are found with respect to an equilibrium, non-self-consistent treatment which are related here to differences in the Kohn-Sham and fully interacting susceptibility of the device region. Moreover, earlier analytical conjectures on the equivalence of static and time-dependent approaches in the low bias regime are confirmed with high numerical precision.

preprint2010arXiv

Time-dependent density functional theory for quantum transport

Based on our earlier works [Phys. Rev. B 75, 195127 (2007) & J. Chem. Phys. 128, 234703 (2008)], we propose a formally exact and numerically convenient approach to simulate time-dependent quantum transport from first-principles. The proposed approach combines time-dependent density functional theory with quantum dissipation theory, and results in a useful tool for studying transient dynamics of electronic systems. Within the proposed exact theoretical framework, we construct a number of practical schemes for simulating realistic systems such as nanoscopic electronic devices. Computational cost of each scheme is analyzed, with the expected level of accuracy discussed. As a demonstration, a simulation based on the adiabatic wide-band limit approximation scheme is carried out to characterize the transient current response of a carbon nanotube based electronic device under time-dependent external voltages.