Researcher profile

Chin Shen Ong

Chin Shen Ong contributes to research discovery and scholarly infrastructure.

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Published work

5 published item(s)

preprint2022arXiv

Nature of novel moiré exciton states in WSe$_2$/WS$_2$ heterobilayers

Moiré patterns of transition metal dichalcogenide (TMD) heterobilayers have proven to be an ideal platform to host unusual correlated electronic phases, emerging magnetism, and correlated exciton physics. While the existence of novel moiré excitonic states is established through optical measurements, the microscopic nature of these states is still poorly understood, often relying on empirically fit models. Here, combining large-scale first-principles GW-BSE calculations and micro-reflection spectroscopy, we identify the nature of the exciton resonances in WSe$_2$/WS$_2$ moiré superlattices, discovering a surprisingly rich set of moiré excitons that cannot be even qualitatively captured by prevailing continuum models. Our calculations reveal moiré excitons with distinct characters, including modulated Wannier excitons and previously unindentified intralayer charge-transfer excitons. Signatures of these distinct excitonic characters are confirmed experimentally via the unique carrier-density and magnetic-field dependences of different moiré exciton resonances. Our study highlights the highly non-trivial exciton states that can emerge in TMD moiré superlattices, and suggests novel ways of tuning many-body physics in moiré systems by engineering excited-states with specific spatial characters.

preprint2022arXiv

Photo-induced Hidden Phase of 1T-TaS2 with Tunable Lifetime

Phase transitions are ubiquitous, appearing at every length scale from atoms to galaxies. In condensed matter, ultrafast laser pulses drive materials to highly non-equilibrium conditions allowing transitions to new phases of matter not attainable under thermal excitation. Despite the intense scrutiny these hidden phases have received, the details of the dynamics of transition and reestablishment of the ground state remain largely unexplored. Here, we show the transition to a hidden phase of 1T-TaS2 driven by the screening of Coulombic repulsive interaction by photoexcited electrons. The temporal evolution of the coherent lattice dynamics highlights the existence of a novel phase with a laser fluence-dependent lifetime. The modeling of the dynamics reveals that the transition is caused by photo-excited carriers and it disappears at the rate of electron-phonon scattering. Our results demonstrate how femtosecond laser absorption leads to a decoupling of the electronic and lattice sub-systems, opening the way to novel states of matter, which can be controlled with light. We expect our investigation to be a starting point towards the development of novel ultrafast photonics devices, such as switches and modulators, taking advantage of fast and tunable phase transitions.

preprint2022arXiv

sp$^{2}$/sp$^{3}$ bonding controlling mechanism at the $α$-Al$_{2}$O$_{3}|$graphene interface

First-principles calculations reported here illuminate the effects of the interfacial properties of $α$-Al$_{2}$O$_{3}$ and graphene, with emphasis on the structural and electronic properties. Various contact interfaces and different $α$-Al$_{2}$O$_{3}$ surface terminations are considered with on and slightly-off stoichiometric aluminium oxide. We show that depending on whether aluminium or oxygen is in contact with graphene, an $sp^{3}$ structural deformation and spontaneous spin-polarization may occur next to the interface contact. Interestingly, some cases cause a $p$-type doping in the graphene band structure, depending on the initial $α$-Al$_{2}$O$_{3}$ geometry placed on graphene. The importance of leaving the surface dangling bonds of alumina saturated or not is also highlighted, and we show that it might be a control mechanism for opening a gap in graphene by the influence of the $sp^{3}$ bond between oxygen and carbon atoms at the interface. We discuss the potential of utilizing this sensitivity for practical applications.

preprint2022arXiv

Unconventional Excitonic States with Phonon Sidebands in Layered Silicon Diphosphide

Many-body interactions between quasiparticles (electrons, excitons, and phonons) have led to the emergence of new complex correlated states and are at the core of condensed matter physics and material science. In low-dimensional materials, unique electronic properties for these correlated states could significantly affect their optical properties. Herein, combining photoluminescence, optical reflection measurements and theoretical calculations, we demonstrate an unconventional excitonic state and its bound phonon sideband in layered silicon diphosphide (SiP$_2$), in which the bound electron-hole pair is composed of electrons confined within one-dimensional phosphorus$-$phosphorus chains and holes extended in two-dimensional SiP$_2$ layers. The excitonic state and the emergent phonon sideband show linear dichroism and large energy redshifts with increasing temperature. Within the $GW$ plus Bethe$-$Salpeter equation calculations and solving the generalized Holstein model non-perturbatively, we confirm that the observed sideband feature results from the correlated interaction between excitons and optical phonons. Such a layered material provides a new platform to study excitonic physics and many-particle effects.

preprint2021arXiv

\textit{In-situ} pseudopotentials for electronic structure theory

We present a general method of constructing \textit{in-situ} pseodopotentials from first principles, all-electron, full-potential electronic structure calculations of a solid. The method is applied to bcc Na, at equilibrium volume. The essential steps of the method involve (i) calculating an all-electron Kohn-Sham eigenstate. (ii) Replacing the oscillating part of the wavefunction (inside the muffin-tin spheres) of this state, with a smooth function. (iii) Representing the smooth wavefunction in a Fourier series, and (iv) inverting the Kohn-Sham equation, to extract the pseudopotential that produces the state generated in steps (i)-(iii). It is shown that an \textit{in-situ} pseudopotential can reproduce an all-electron, full-potential eigenvalue up to the sixth significant digit. A comparison of the all-electron theory, \textit{in-situ} pseudopotential theory and the standard nonlocal pseudopotential theory demonstrates good agreement, e.g., in the energy dispersion of the 3$s$ band state of bcc Na.