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Chiara Trovatello

Chiara Trovatello contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2025arXiv

Tracking the photoinduced dynamics of a dark excitonic state in single-layer WS$_2$ via resonant Autler-Townes splitting

Excitons in a monolayer transition metal dichalcogenide (1L-TMD) are highly bound states characterized by a Rydberg-like spectrum of discrete energy levels. Among these, states with odd-parity are known as dark excitons due to selection rules, which make their stationary and transient characterization challenging using linear optical techniques. Here, we demonstrate that the dynamics of a 2p dark excitonic state in 1L-WS$_2$ can be directly retrieved by measuring the Autler-Townes splitting of bright states in a three-pulse experiment. The splitting of the bright 1s excitonic state, observed by detuning a mid-infrared control field across the 1s-2p transition, provides an accurate characterization of the 2p state. Following carrier photoinjection, we observe a qualitatively different dynamics of the 1s and 2p levels, which is indicative of symmetry-dependent screening and exciton-exciton interactions. These findings provide new insights into many-body effects in TMDs, offering potential avenues for advancing the next generation optoelectronics.

preprint2021arXiv

Hot-Carrier Cooling in High-Quality Graphene is Intrinsically Limited by Optical Phonons

Many promising optoelectronic devices, such as broadband photodetectors, nonlinear frequency converters, and building blocks for data communication systems, exploit photoexcited charge carriers in graphene. For these systems, it is essential to understand, and eventually control, the cooling dynamics of the photoinduced hot-carrier distribution. There is, however, still an active debate on the different mechanisms that contribute to hot-carrier cooling. In particular, the intrinsic cooling mechanism that ultimately limits the cooling dynamics remains an open question. Here, we address this question by studying two technologically relevant systems, consisting of high-quality graphene with a mobility >10,000 cm$^2$V$^{-1}$s$^{-1}$ and environments that do not efficiently take up electronic heat from graphene: WSe$_2$-encapsulated graphene and suspended graphene. We study the cooling dynamics of these two high-quality graphene systems using ultrafast pump-probe spectroscopy at room temperature. Cooling via disorder-assisted acoustic phonon scattering and out-of-plane heat transfer to the environment is relatively inefficient in these systems, predicting a cooling time of tens of picoseconds. However, we observe much faster cooling, on a timescale of a few picoseconds. We attribute this to an intrinsic cooling mechanism, where carriers in the hot-carrier distribution with enough kinetic energy emit optical phonons. During phonon emission, the electronic system continuously re-thermalizes, re-creating carriers with enough energy to emit optical phonons. We develop an analytical model that explains the observed dynamics, where cooling is eventually limited by optical-to-acoustic phonon coupling. These fundamental insights into the intrinsic cooling mechanism of hot carriers in graphene will play a key role in guiding the development of graphene-based optoelectronic devices.

preprint2019arXiv

Broadband optical parametric amplification by two-dimensional semiconductors

Optical parametric amplification is a second-order nonlinear process whereby an optical signal is amplified by a pump via the generation of an idler field. It is the key ingredient of tunable sources of radiation that play an important role in several photonic applications. This mechanism is inherently related to spontaneous parametric down-conversion that currently constitutes the building block for entangled photon pair generation, which has been exploited in modern quantum technologies ranging from computing to communications and cryptography. Here we demonstrate single-pass optical parametric amplification at the ultimate thickness limit; using semiconducting transition-metal dichalcogenides, we show that amplification can be attained over a propagation through a single atomic layer. Such a second-order nonlinear interaction at the 2D limit bypasses phase-matching requirements and achieves ultrabroad amplification bandwidths. The amplification process is independent on the in-plane polarization of the impinging signal and pump fields. First-principle calculations confirm the observed polarization invariance and linear relationship between idler and pump powers. Our results pave the way for the development of atom-sized tunable sources of radiation with applications in nanophotonics and quantum information technology.