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Researcher profile

Chenjiang Qian

Chenjiang Qian contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallphysics.optics

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Published work

4 published item(s)

preprint2022arXiv

Unveiling the Zero-Phonon Line of the Boron Vacancy Center by Cavity Enhanced Emission

Negatively charged boron vacancies ($V_B^-$) in hexagonal boron nitride (hBN) exhibit a broad emission spectrum due to strong electron-phonon coupling and Jahn-Teller mixing of electronic states. As such, the direct measurement of zero-phonon line (ZPL) of $V_B^-$ has remained elusive. Here, we measure the room-temperature ZPL wavelength to be $773\pm2$ nm by coupling the hBN layer to the high-Q nanobeam cavity. As the wavelength of cavity mode is tuned, we observe a pronounced intensity resonance, indicating the coupling to $V_B^-$. Our observations are consistent with the spatial redistribution of $V_B^-$ emission. Spatially resolved measurements show a clear Purcell effect maximum at the midpoint of the nanobeam, in accord with the optical field distribution of the cavity mode. Our results are in good agreement with theoretical calculations, opening the way to using $V_B^-$ as cavity spin-photon interfaces.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Diabolical Points in Coupled Active Cavities with Quantum Emitters

In single microdisks, embedded active emitters intrinsically affect the cavity mode of microdisks, which results in a trivial symmetric backscattering and a low controllability. Here we propose a macroscopical control of the backscattering direction by optimizing the cavity size. The signature of positive and negative backscattering directions in each single microdisk is confirmed with two strongly coupled microdisks. Furthermore, the diabolical points are achieved at the resonance of two microdisks, which agrees well with the theoretical calculations considering backscattering directions. The diabolical points in active optical structures pave a way to implement quantum information processing with geometric phase in quantum photonic networks.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Identifying defect-related quantum emitters in monolayer WSe$_2$

Monolayer transition metal dichalcogenides have recently attracted great interests because the quantum dots embedded in monolayer can serve as optically active single photon emitters. Here, we provide an interpretation of the recombination mechanisms of these quantum emitters through polarization-resolved and magneto-optical spectroscopy at low temperature. Three types of defect-related quantum emitters in monolayer tungsten diselenide (WSe$_2$) are observed, with different exciton g factors of 2.02, 9.36 and unobservable Zeeman shift, respectively. The various magnetic response of the spatially localized excitons strongly indicate that the radiative recombination stems from the different transitions between defect-induced energy levels, valance and conduction bands. Furthermore, the different g factors and zero-field splittings of the three types of emitters strongly show that quantum dots embedded in monolayer have various types of confining potentials for localized excitons, resulting in electron-hole exchange interaction with a range of values in the presence of anisotropy. Our work further sheds light on the recombination mechanisms of defect-related quantum emitters and paves a way toward understanding the role of defects in single photon emitters in atomically thin semiconductors.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Large photoluminescence enhancement by an out-of-plane magnetic field in exfoliated WS$_2$ flakes

We report an out-of-plane magnetic field induced large photoluminescence enhancement in WS${}_2$ flakes at $4$ K, in contrast to the photoluminescence enhancement provided by in-plane field in general. Two mechanisms for the enhancement are proposed. One is a larger overlap of electron and hole caused by the magnetic field induced confinement. The other is that the energy difference between $Λ$ and K valleys is reduced by magnetic field, and thus enhancing the corresponding indirect-transition trions. Meanwhile, the Landé g factor of the trion is measured as $-0.8$, whose absolute value is much smaller than normal exciton, which is around $|-4|$. A model for the trion g factor is presented, confirming that the smaller absolute value of Landé g factor is a behavior of this $Λ$-K trion. By extending the valley space, we believe this work provides a further understanding of the valleytronics in monolayer transition metal dichalcogenides.

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