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Cheng-Wei Lin

Cheng-Wei Lin contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2022arXiv

Search for Axion(-like) Particles in Heavy-Ion Collisions

We propose a novel way to search for axion(-like) particles in heavy-ion collisions using prompt photons as the probe and the property of conversion between photon and axion(-like) particles under a strong magnetic field generated in the non-central collisions. The expected result reveals that a new phase space region of the coupling constant for photon and axion(-like) particles can be covered in the future high energy nuclear colliders.

preprint2016arXiv

Temperature-dependent permittivity of annealed and unannealed gold films

Due to local field enhancement and subwavelength confinements, nano-plasmonics provide numerous novel applications. Simultaneously, as an efficient nanoscale heat generator from inherent absorption, thermo-plasmonics is emerging as an important branch. However, although significant temperature increase is involved in applications, detailed characterization of metal permittivity at different temperatures and corresponding thermo-derivative are lacking. In this work, we extract the permittivity of gold from 300K to the annealing temperature of 570K. By comparing annealed and unannealed films, more than one-order difference in thermo-derivative of permittivity is revealed, resulting in unexpectedly large variation of plasmonic properties. Our result is valuable not only for characterizing extensively used unannealed nanoparticles, but also for designing future thermo-nano-plasmonic systems.

preprint2015arXiv

Schmitt-Trigger-based Recycling Sensor and Robust and High-Quality PUFs for Counterfeit IC Detection

We propose Schmitt-Trigger (ST) based recycling sensor that are tailored to amplify the aging mechanisms and detect fine grained recycling (minutes to seconds). We exploit the susceptibility of ST to process variations to realize high-quality arbiter PUF. Conventional SRAM PUF suffer from environmental fluctuation-induced bit flipping. We propose 8T SRAM PUF with a back-to-back PMOS latch to improve robustness by 4X. We also propose a low-power 7T SRAM with embedded Magnetic Tunnel Junction (MTJ) devices to enhance the robustness (2.3X to 20X).