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Cheng Hu

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Published work

10 published item(s)

preprint2022arXiv

Attention and Prediction Guided Motion Detection for Low-Contrast Small Moving Targets

Small target motion detection within complex natural environments is an extremely challenging task for autonomous robots. Surprisingly, the visual systems of insects have evolved to be highly efficient in detecting mates and tracking prey, even though targets occupy as small as a few degrees of their visual fields. The excellent sensitivity to small target motion relies on a class of specialized neurons called small target motion detectors (STMDs). However, existing STMD-based models are heavily dependent on visual contrast and perform poorly in complex natural environments where small targets generally exhibit extremely low contrast against neighbouring backgrounds. In this paper, we develop an attention and prediction guided visual system to overcome this limitation. The developed visual system comprises three main subsystems, namely, an attention module, an STMD-based neural network, and a prediction module. The attention module searches for potential small targets in the predicted areas of the input image and enhances their contrast against complex background. The STMD-based neural network receives the contrast-enhanced image and discriminates small moving targets from background false positives. The prediction module foresees future positions of the detected targets and generates a prediction map for the attention module. The three subsystems are connected in a recurrent architecture allowing information to be processed sequentially to activate specific areas for small target detection. Extensive experiments on synthetic and real-world datasets demonstrate the effectiveness and superiority of the proposed visual system for detecting small, low-contrast moving targets against complex natural environments.

preprint2022arXiv

Catalytic growth of ultralong graphene nanoribbons on insulating substrates

Graphene nanoribbons (GNRs) with widths of a few nanometres are promising candidates for future nano-electronic applications due to their structurally tunable bandgaps, ultrahigh carrier mobilities, and exceptional stability. However, the direct growth of micrometre-long GNRs on insulating substrates, which is essential for the fabrication of nano-electronic devices, remains an immense challenge. Here, we report the epitaxial growth of GNRs on an insulating hexagonal boron nitride (h-BN) substrate through nanoparticle-catalysed chemical vapor deposition (CVD). Ultra-narrow GNRs with lengths of up to 10 μm are synthesized. Remarkably, the as-grown GNRs are crystallographically aligned with the h-BN substrate, forming one-dimensional (1D) moiré superlattices. Scanning tunnelling microscopy reveals an average width of 2 nm and a typical bandgap of ~1 eV for similar GNRs grown on conducting graphite substrates. Fully atomistic computational simulations support the experimental results and reveal a competition between the formation of GNRs and carbon nanotubes (CNTs) during the nucleation stage, and van der Waals sliding of the GNRs on the h-BN substrate throughout the growth stage. Our study provides a scalable, single-step method for growing micrometre-long narrow GNRs on insulating substrates, thus opening a route to explore the performance of high-quality GNR devices and the fundamental physics of 1D moiré superlattices.

preprint2022arXiv

Tracking the nematicity in cuprate superconductors: a resistivity study under uniaxial pressure

Overshadowing the superconducting dome in hole-doped cuprates, the pseudogap state is still one of the mysteries that no consensus can be achieved. It has been suggested that the rotational symmetry is broken in this state and may result in a nematic phase transition, whose temperature seems to coincide with the onset temperature of the pseudogap state $T^*$ around optimal doping level, raising the question whether the pseudogap results from the establishment of the nematic order. Here we report results of resistivity measurements under uniaxial pressure on several hole-doped cuprates, where the normalized slope of the elastoresistivity $ζ$ can be obtained as illustrated in iron-based superconductors. The temperature dependence of $ζ$ along particular lattice axis exhibits kink feature at $T_{k}$ and shows Curie-Weiss-like behavior above it, which may suggest a spontaneous nematic transition. While $T_{k}$ seems to be the same as $T^*$ around the optimal doping and in the overdoped region, they become very different in underdoped La$_{2-x}$Sr$_{x}$CuO$_4$. Our results suggest that the nematic order, if indeed existing, is an electronic phase within the pseudogap state.

preprint2021arXiv

Momentum-Resolved Visualization of Electronic Evolution in Doping a Mott Insulator

High temperature superconductivity in cuprates arises from doping a parent Mott insulator by electrons or holes. A central issue is how the Mott gap evolves and the low-energy states emerge with doping. Here we report angle-resolved photoemission spectroscopy measurements on a cuprate parent compound by sequential in situ electron doping. The chemical potential jumps to the bottom of the upper Hubbard band upon a slight electron doping, making it possible to directly visualize the charge transfer band and the full Mott gap region. With increasing doping, the Mott gap rapidly collapses due to the spectral weight transfer from the charge transfer band to the gapped region and the induced low-energy states emerge in a wide energy range inside the Mott gap. These results provide key information on the electronic evolution in doping a Mott insulator and establish a basis for developing microscopic theories for cuprate superconductivity.

preprint2020arXiv

Electronic Evolution from the Parent Mott Insulator to a Superconductor in Lightly Hole-Doped Bi2Sr2CaCu2O8+delta

High temperature superconductivity in cuprates is realized by doping the Mott insulator with charge carriers. A central issue is how such an insulating state can evolve into a conducting or superconducting state when charge carriers are introduced. Here, by in situ vacuum annealing and Rb deposition on the Bi2Sr2Ca0.6Dy0.4Cu2O8+delta (Bi2212) sample surface to push its doping level continuously from deeply underdoped (Tc=25 K, doping level p-0.066) to the near zero doping parent Mott insulator, angle-resolved photoemission spectroscopy measurements are carried out to observe the detailed electronic structure evolution in lightly hole-doped region for the first time. Our results indicate that the chemical potential lies at about 1 eV above the charge transfer band for the parent state at zero doping which is quite close to the upper Hubbard band. With increasing hole doping, the chemical potential moves continuously towards the charge transfer band and the band structure evolution exhibits a rigid band shift-like behavior. When the chemical potential approaches the charge transfer band at a doping level of -0.05, the nodal spectral weight near the Fermi level increases, followed by the emergence of the coherent quasiparticle peak and the insulator-superconductor transition. Our observations provide key insights in understanding the insulator-superconductor transition in doping the parent cuprate compound and for establishing related theories.

preprint2019arXiv

Reflection Phase Shift of One-dimensional Plasmon Polaritons in Carbon Nanotubes

We investigated, both experimentally and theoretically, the reflection phase shift (RPS) of one-dimensional plasmon polaritons. We launched 1D plasmon polaritons in carbon nanotube and probed the plasmon interference pattern using scanning near-field optical microscopy (SNOM) technique, through which a non-zero phase shift was observed. We further developed a theory to understand the nonzero phase shift of 1D polaritons, and found that the RPS can be understood by considering the evanescent field beyond the nanotube end. Interesting, our theory shows a strong dependence of RPS on polaritons wavelength and nanotube diameter, which is in stark contrast to 2D plasmon polaritons in graphene where the RPS is a constant. In short wave region, the RPS of 1D polaritons only depends on a dimensionless variable -- the ratio between polaritons wavelength and nanotube diameter. These results provide fundamental insights into the reflection of polaritons in 1D system, and could facilitate the design of ultrasmall 1D polaritonic devices, such as resonators, interferometers.

preprint2019arXiv

Selective Hybridization between Main Band and Superstructure Band in Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$ Superconductor

High-resolution laser-based angle-resolved photoemission measurements have been carried out on Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$ (Bi2212) and Bi$_2$Sr$_{2-x}$La$_x$CuO$_{6+δ}$ (Bi2201) superconductors. Unexpected hybridization between the main band and the superstructure band in Bi2212 is clearly revealed. In the momentum space where one main Fermi surface intersects with one superstructure Fermi surface, four bands are observed instead of two. The hybridization exists in both superconducting state and normal state, and in Bi2212 samples with different doping levels. Such a hybridization is not observed in Bi2201. This phenomenon can be understood by considering the bilayer splitting in Bi2212, the selective hybridization of two bands with peculiar combinations, and the altered matrix element effects of the hybridized bands. These observations provide strong evidence on the origin of the superstructure band which is intrinsic to the CuO$_2$ planes. Therefore, understanding physical properties and superconductivity mechanism in Bi2212 should consider the complete Fermi surface topology which involves the main bands, the superstructure bands and their interactions.

preprint2016arXiv

Electronic Evidence for Type II Weyl Semimetal State in MoTe2

Topological quantum materials, including topological insulators and superconductors, Dirac semimetals and Weyl semimetals, have attracted much attention recently for their unique electronic structure, spin texture and physical properties. Very lately, a new type of Weyl semimetals has been proposed where the Weyl Fermions emerge at the boundary between electron and hole pockets in a new phase of matter, which is distinct from the standard type I Weyl semimetals with a point-like Fermi surface. The Weyl cone in this type II semimetals is strongly tilted and the related Fermi surface undergos a Lifshitz transition, giving rise to a new kind of chiral anomaly and other new physics. MoTe2 is proposed to be a candidate of a type II Weyl semimetal; the sensitivity of its topological state to lattice constants and correlation also makes it an ideal platform to explore possible topological phase transitions. By performing laser-based angle-resolved photoemission (ARPES) measurements with unprecedentedly high resolution, we have uncovered electronic evidence of type II semimetal state in MoTe2. We have established a full picture of the bulk electronic states and surface state for MoTe2 that are consistent with the band structure calculations. A single branch of surface state is identified that connects bulk hole pockets and bulk electron pockets. Detailed temperature-dependent ARPES measurements show high intensity spot-like features that is ~40 meV above the Fermi level and is close to the momentum space consistent with the theoretical expectation of the type II Weyl points. Our results constitute electronic evidence on the nature of the Weyl semimetal state that favors the presence of two sets of type II Weyl points in MoTe2.

preprint2015arXiv

Electronic Structure of Transition Metal Dichalcogenides PdTe2 and Cu0.05PdTe2 Superconductors Obtained by Angle-Resolved Photoemission Spectroscopy

The layered transition metal chalcogenides have been a fertile land in solid state physics for many decades. Various MX2-type transition metal dichalcogenides, such as WTe2, IrTe2, and MoS2, have triggered great attention recently, either for the discovery of novel phenomena or some extreme or exotic physical properties, or for their potential applications. PdTe2 is a superconductor in the class of transition metal dichalcogenides, and superconductivity is enhanced in its Cu-intercalated form, Cu0.05PdTe2. It is important to study the electronic structures of PdTe2 and its intercalated form in order to explore for new phenomena and physical properties and understand the related superconductivity enhancement mechanism. Here we report systematic high resolution angle-resolved photoemission (ARPES) studies on PdTe2 and Cu0.05$PdTe2 single crystals, combined with the band structure calculations. We present for the first time in detail the complex multi-band Fermi surface topology and densely-arranged band structure of these compounds. By carefully examining the electronic structures of the two systems, we find that Cu-intercalation in PdTe2 results in electron-doping, which causes the band structure to shift downwards by nearly 16 meV in Cu0.05PdTe2. Our results lay a foundation for further exploration and investigation on PdTe2 and related superconductors.

preprint2015arXiv

Identification of Topological Surface State in PdTe2 Superconductor by Angle-Resolved Photoemission Spectroscopy

High resolution angle-resolved photoemission measurements have been carried out on transition metal dichalcogenide PdTe2 that is a superconductor with a Tc at 1.7 K. Combined with theoretical calculations, we have discovered for the first time the existence of topologically nontrivial surface state with Dirac cone in PbTe2 superconductor. It is located at the Brillouin zone center and possesses helical spin texture. Distinct from the usual three-dimensional topological insulators where the Dirac cone of the surface state lies at the Fermi level, the Dirac point of the surface state in PdTe2 lies deep below the Fermi level at ~1.75 eV binding energy and is well separated from the bulk states. The identification of topological surface state in PdTe2 superconductor deep below the Fermi level provides a unique system to explore for new phenomena and properties and opens a door for finding new topological materials in transition metal chalcogenides.