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Cheng Ge

Cheng Ge contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2022arXiv

DePS: An improved deep learning model for de novo peptide sequencing

De novo peptide sequencing from mass spectrometry data is an important method for protein identification. Recently, various deep learning approaches were applied for de novo peptide sequencing and DeepNovoV2 is one of the represetative models. In this study, we proposed an enhanced model, DePS, which can improve the accuracy of de novo peptide sequencing even with missing signal peaks or large number of noisy peaks in tandem mass spectrometry data. It is showed that, for the same test set of DeepNovoV2, the DePS model achieved excellent results of 74.22%, 74.21% and 41.68% for amino acid recall, amino acid precision and peptide recall respectively. Furthermore, the results suggested that DePS outperforms DeepNovoV2 on the cross species dataset.

preprint2020arXiv

2.5-kV AlGaN/GaN Schottky Barrier Diode on Silicon Substrate with Recessed-anode Structure

In this letter, we demonstrate high-performance lateral AlGaN/GaN Schottky barrier diodes (SBD) on Si substrate with a recessed-anode structure. The optimized rapid etch process provides results in improving etching quality with a 0.26-nm roughness of the anode recessed surface. By using the high work function metal Pt as the Schottky electrode, a low Von of 0.71 V is obtained with a high uniformity of 0.023 V for 40 devices. Supported by the flat anode recess surface and related field plate design, the SBD device with the anode-cathode spacing of 15 um show the Ron,sp of 1.53 mOhm.cm2 only, the breakdown voltage can reach 1592 V with a high power FOM (Figure-of-Merit) of 1656 MW/cm2. For the SBD device with the anode-cathode spacing of 30 um, the breakdown voltage can be as high as 2521 V and the power FOM is 1244 MW/cm2.