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Cheng Dai

Cheng Dai contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2026arXiv

HADAR-Based Thermal Infrared Hyperspectral Image Restoration

Thermal-infrared (TIR) hyperspectral imagery (HSI) provides critical scene information for various applications. However, its practical utility is severely limited by unique sensor degradations beyond the capabilities of existing restoration methods, which are ignorant of underlying thermal physics. Here, we propose HAIR (HADAR-based Image Restoration) as a physics-driven framework for ground-based TIR-HSI restoration. HAIR utilizes the HADAR rendering equation (HRE) and combines it with the atmospheric downwelling radiative transfer equation (RTE) to model TIR-HSI using temperature, emissivity, and texture (TeX) physical triplets. This physical model leads to a TeX decompose-synthesize strategy that guarantees physical consistency and spatio-spectral noise resilience, in stark contrast to existing approaches. Moreover, our framework uses a forward-modeled atmospheric downwelling reference, along with spectral smoothness of emissivity and blackbody radiation, to enable spectral calibration and generation that would otherwise be elusive. Our extensive experiments on the outdoor DARPA Invisible Headlights dataset and in-lab FTIR measurements show that HAIR consistently outperforms state-of-the-art methods across denoising, inpainting, spectral calibration, and spectral super-resolution, establishing a benchmark in objective accuracy and visual quality.

preprint2022arXiv

Nonvolatile Electric-Field Control of Inversion Symmetry

In condensed-matter systems, competition between ground states at phase boundaries can lead to significant changes in material properties under external stimuli, particularly when these ground states have different crystal symmetries. A key scientific and technological challenge is to stabilize and control coexistence of symmetry-distinct phases with external stimuli. Using BiFeO3 (BFO) layers confined between layers of the dielectric TbScO3 as a model system, we stabilize the mixed-phase coexistence of centrosymmetric and non-centrosymmetric BFO phases with antipolar, insulating and polar, semiconducting behavior, respectively at room temperature. Application of in-plane electric (polar) fields can both remove and introduce centrosymmetry from the system resulting in reversible, nonvolatile interconversion between the two phases. This interconversion between the centrosymmetric insulating and non-centrosymmetric semiconducting phases coincides with simultaneous changes in the non-linear optical response of over three orders of magnitude, a change in resistivity of over five orders of magnitude, and a change in the polar order. Our work establishes a materials platform allowing for novel cross-functional devices which take advantage of changes in optical, electrical, and ferroic responses.

preprint2021arXiv

Order-disorder transitions in a polar vortex lattice

Order-disorder transitions are widely explored in various vortex structures in condensed matter physics, i.e., in the type-II superconductors and Bose-Einstein condensates. In this study, we have investigated the ordering of the polar vortex phase in the (PZT)n/(STO)n superlattice systems through phase-field simulations. An antiorder state is discovered for short periodicity superlattice on an SSO substrate, owing to the huge interfacial coupling between PZT and STO as well as the giant in-plane polarization in STO layers due to the large tensile strain. Increasing the periodicity leads to the anti-order to disorder transition, resulting from the loss of interfacial coupling and disappearance of the polarization in STO layers. On the other hand, for short periodicity superlattices, order-disorder-antiorder transition can be engineered by mediating the substrate strain, due to the delicate competition between the depoling effect, interfacial coupling, and strain effect. We envision this study to spur further interest towards the understanding of order-disorder transition in ferroelectric topological structures.