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Chen Si

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cond-mat.mtrl-sci cond-mat.mes-hall cond-mat.supr-con cond-mat.str-el

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preprint2024arXiv

Enhancement of Ising superconductivity in monolayer NbSe$_2$ via surface fluorination

Recently discovered Ising superconductors have garnered considerable interest due to their anomalously large in-plane upper critical fields ($B_{c2}$). However, the requisite strong spin-orbital coupling in the Ising pairing mechanism generally renders these superconductors heavy-element dominant with notably low superconducting transition temperatures ($T_c$). Here, based on the Migdal-Eliashberg theory and the mean-field Bogoliubov-de Gennes Hamiltonian, we demonstrate a significant enhancement of Ising superconductivity in monolayer NbSe$_2$ through surface fluorination, as evidenced by concomitant improvements in $T_c$ and $B_{c2}$. This enhancement arises from three predominant factors. Firstly, fluorine atoms symmetrically and stably adhere to both sides of the monolayer NbSe$_2$, thereby maintaining the out-of-plane mirror symmetry and locking carrier spins out-of-plane. Secondly, fluorination suppresses the charge density wave in monolayer NbSe$_2$ and induces a van Hove singularity in the vicinity of the Fermi level, leading to a marked increase in the number of carriers and, consequently, strengthening the electron-phonon coupling (EPC). Lastly, the appearance of fluorine-related, low-frequency phonon modes further augments the EPC. Our findings suggest a promising avenue to elevate $T_c$ in two-dimensional Ising superconductors without compromising their Ising pairing.

preprint2021arXiv

Stacking effect and Coulomb correlation in layered charge density wave phase of 1T-NbS2

Based on first-principles calculations, we explored the interplay between stacking effect and electron-electron correlation in the layered vdW material of bulk 1T-NbS2 with a 2D charge density wave (CDW) order. Without considering the Coulomb correlation, two energetically favorable out-of-plane stacking configurations are identified: one is a metallic phase with a single-layer stacking pattern, another is a band insulator with a paired-bilayer stacking configuration. Even though the Coulomb correlation is taken into account, the two energetic favorable stacking orders are still far more stable than other stacking orders. Furthermore, increasing the Coulomb interaction, the paired-bilayer stacking configuration transforms from nonmagnetic band insulator to antiferromagnetic insulator, while the single-layer stacking undergoes a Slater-Mott metal-insulator transition, which indicates the non-negligible role of electron-electron correlation interactions. In addition, the electronic structure and magnetic ground state change drastically among different stacking configurations, providing a platform to tune the electronic structures and interlayer magnetic interactions by altering the stacking order. In contrast to the widely accepted scenario of Mott localization as the driving force behind the gap formation in the CDW phase of layered transition metal dichalcogenides, our results not only highlight the crucial role of stacking order in the electronic structures of 1T-NbS2, but also shed fresh light on the distinct effects of Coulomb interaction in different stacking arrangements.

preprint2014arXiv

Functionalized Germanene as a Prototype of Large-Gap Two-Dimensional Topological Insulators

We propose new two-dimensional (2D) topological insulators (TIs) in functionalized germanenes (GeX, X=H, F, Cl, Br or I) using first-principles calculations. We find GeI is a 2D TI with a bulk gap of about 0.3 eV, while GeH, GeF, GeCl and GeBr can be transformed into TIs with sizeable gaps under achievable tensile strains. A unique mechanism is revealed to be responsible for large topologically-nontrivial gap obtained: owing to the functionalization, the $σ$ orbitals with stronger spin-orbit coupling (SOC) dominate the states around the Fermi level, instead of original $π$ orbitals with weaker SOC; thereinto, the coupling of the $p_{xy}$ orbitals of Ge and heavy halogens in forming the $σ$ orbitals also plays a key role in the further enlargement of the gaps in halogenated germanenes. Our results suggest a realistic possibility for the utilization of topological effects at room temperature.

preprint2013arXiv

Superconducting Graphene: the conspiracy of doping and strain

Graphene has exhibited a wealth of fascinating properties, but is also known not to be a superconductor. Remarkably, we show that graphene can be made a conventional Bardeen-Cooper-Schrieffer superconductor by the combined effect of charge doping and tensile strain. While the effect of doping is obvious to enlarge Fermi surface, the effect of strain is profound to greatly increase the electron-phonon coupling. At the experimental accessible doping (4E+14cm-2) and strain (~16%) levels, the superconducting critical temperature Tc reaches as high as ~30 K, the highest for a single-element material above the liquid hydrogen temperature. This significantly makes graphene a commercially viable superconductor.

preprint2012arXiv

Electronic Strengthening of Graphene by Charge Doping

Graphene is known as the strongest 2D material in nature, yet we show that moderate charge doping of either electrons or holes can further enhance its ideal strength by up to ~17%, based on first principles calculations. This unusual electronic enhancement, versus conventional structural enhancement, of material's strength is achieved by an intriguing physical mechanism of charge doping counteracting on strain induced enhancement of Kohn anomaly, which leads to an overall stiffening of zone boundary K1 phonon mode whose softening under strain is responsible for graphene failure. Electrons and holes work in the same way due to the high electron-hole symmetry around the Dirac point of graphene, while over doping may weaken the graphene by softening other phonon modes. Our findings uncover another fascinating property of graphene with broad implications in graphene-based electromechanical devices.