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Researcher profile

Charles Babin

Charles Babin contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
quant-phphysics.opticscond-mat.mtrl-sciphysics.atom-ph

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Published work

8 published item(s)

preprint2022arXiv

A Quantum Optical Microphone in the Audio Band

The ability to perform high-precision optical measurements is paramount to science and engineering. Laser interferometry enables interaction-free sensing with a precision ultimately limited by shot noise. Quantum optical sensors can surpass this limit, but single- or multi-photon schemes are challenged by low experimental sampling rates, while squeezed-light approaches require complex optical setups and sophisticated time gating. Here, we introduce a simple method that infers optical phase shifts through standard intensity measurements while still maintaining the quantum advantage in the measurement precision. Capitalising on the robustness and high sampling rates of our device, we implement a quantum optical microphone in the audio band. Its performance is benchmarked against a classical laser microphone in a standardised medically-approved speech recognition test on 45 subjects. We find that quantum-recorded words improve the speech recognition threshold by $-0.57\, \text{dB}_{\text{SPL}}$, thus making the quantum advantage audible. Not only do these results open the door towards applications in quantum nonlinear interferometry, but they also show that quantum phenomena can be experienced by humans.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Spin-optical dynamics and quantum efficiency of single V1 center in silicon carbide

Color centers in silicon carbide are emerging candidates for distributed spin-based quantum applications due to the scalability of host materials and the demonstration of integration into nanophotonic resonators. Recently, silicon vacancy centers in silicon carbide have been identified as a promising system with excellent spin and optical properties. Here, we in-depth study the spin-optical dynamics of single silicon vacancy center at hexagonal lattice sites, namely V1, in 4H-polytype silicon carbide. By utilizing resonant and above-resonant sub-lifetime pulsed excitation, we determine spin-dependent excited-state lifetimes and intersystem-crossing rates. Our approach to inferring the intersystem-crossing rates is based on all-optical pulsed initialization and readout scheme, and is applicable to spin-active color centers with similar dynamics models. In addition, the optical transition dipole strength and the quantum efficiency of V1 defect are evaluated based on coherent optical Rabi measurement and local-field calibration employing electric-field simulation. The measured rates well explain the results of spin-state polarization dynamics, and we further discuss the altered photoemission dynamics in resonant enhancement structures such as radiative lifetime shortening and Purcell enhancement. By providing a thorough description of V1 center's spin-optical dynamics, our work provides deep understanding of the system which guides implementations of scalable quantum applications based on silicon vacancy centers in silicon carbide.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Nanofabricated and integrated colour centres in silicon carbide with high-coherence spin-optical properties

Optically addressable spin defects in silicon carbide (SiC) are an emerging platform for quantum information processing. Lending themselves to modern semiconductor nanofabrication, they promise scalable high-efficiency spin-photon interfaces. We demonstrate here nanoscale fabrication of silicon vacancy centres (VSi) in 4H-SiC without deterioration of their intrinsic spin-optical properties. In particular, we show nearly transform limited photon emission and record spin coherence times for single defects generated via ion implantation and in triangular cross section waveguides. For the latter, we show further controlled operations on nearby nuclear spin qubits, which is crucial for fault-tolerant quantum information distribution based on cavity quantum electrodynamics.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Narrow inhomogeneous distribution of spin-active emitters in silicon carbide

Optically active solid-state spin registers have demonstrated their unique potential in quantum computing, communication and sensing. Realizing scalability and increasing application complexity requires entangling multiple individual systems, e.g. via photon interference in an optical network. However, most solid-state emitters show relatively broad spectral distributions, which hinders optical interference experiments. Here, we demonstrate that silicon vacancy centres in semiconductor silicon carbide (SiC) provide a remarkably small natural distribution of their optical absorption/emission lines despite an elevated defect concentration of $\approx 0.43\,\rm μm^{-3}$. In particular, without any external tuning mechanism, we show that only 13 defects have to be investigated until at least two optical lines overlap within the lifetime-limited linewidth. Moreover, we identify emitters with overlapping emission profiles within diffraction limited excitation spots, for which we introduce simplified schemes for generation of computationally-relevant Greenberger-Horne-Zeilinger (GHZ) and cluster states. Our results underline the potential of the CMOS-compatible SiC platform toward realizing networked quantum technology applications.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Spectrally reconfigurable quantum emitters enabled by optimized fast modulation

The ability to shape photon emission facilitates strong photon-mediated interactions between disparate physical systems, thereby enabling applications in quantum information processing, simulation and communication. Spectral control in solid state platforms such as color centers, rare earth ions, and quantum dots is particularly attractive for realizing such applications on-chip. Here we propose the use of frequency-modulated optical transitions for spectral engineering of single photon emission. Using a scattering-matrix formalism, we find that a two-level system, when modulated faster than its optical lifetime, can be treated as a single-photon source with a widely reconfigurable photon spectrum that is amenable to standard numerical optimization techniques. To enable the experimental demonstration of this spectral control scheme, we investigate the Stark tuning properties of the silicon vacancy in silicon carbide, a color center with promise for optical quantum information processing technologies. We find that the silicon vacancy possesses excellent spectral stability and tuning characteristics, allowing us to probe its fast modulation regime, observe the theoretically-predicted two-photon correlations, and demonstrate spectral engineering. Our results suggest that frequency modulation is a powerful technique for the generation of new light states with unprecedented control over the spectral and temporal properties of single photons.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Spin-controlled generation of indistinguishable and distinguishable photons from silicon vacancy centres in silicon carbide

Quantum systems combining indistinguishable photon generation and spin-based quantum information processing are essential for remote quantum applications and networking. However, identification of suitable systems in scalable platforms remains a challenge. Here, we investigate the silicon vacancy centre in silicon carbide and demonstrate controlled emission of indistinguishable and distinguishable photons via coherent spin manipulation. Using strong off-resonant excitation and collecting photons from the ultra-stable zero-phonon line optical transitions, we show a two-photon interference contrast close to 90% in Hong-Ou-Mandel type experiments. Further, we exploit the system's intimate spin-photon relation to spin-control the colour and indistinguishability of consecutively emitted photons. Our results provide a deep insight into the system's spin-phonon-photon physics and underline the potential of the industrially compatible silicon carbide platform for measurement-based entanglement distribution and photonic cluster state generation. Additional coupling to quantum registers based on recently demonstrated coupled individual nuclear spins would further allow for high-level network-relevant quantum information processing, such as error correction and entanglement purification.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Two-photon phase-sensing with single-photon detection

Path-entangled multi-photon states allow optical phase-sensing beyond the shot-noise limit, provided that an efficient parity measurement can be implemented. Realising this experimentally is technologically demanding, as it requires coincident single-photon detection proportional to the number of photons involved, which represents a severe challenge for achieving a practical quantum advantage over classical methods. Here, we exploit advanced quantum state engineering based on superposing two photon-pair creation events to realise a new approach that bypasses this issue. In particular, optical phase shifts are probed with a two-photon quantum state whose information is subsequently effectively transferred to a single-photon state. Notably, without any multiphoton detection, we infer phase shifts by measuring the average intensity of the single-photon beam on a photodiode, in analogy to standard classical measurements. Importantly, our approach maintains the quantum advantage: twice as many interference fringes are observed for the same phase shift, corresponding to N=2 path-entangled photons. Our results demonstrate that the advantages of quantum-enhanced phase-sensing can be fully exploited in standard intensity measurements, paving the way towards resource-efficient and practical quantum optical metrology.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Vibronic states and their effect on the temperature and strain dependence of silicon-vacancy qubits in 4H silicon carbide

Silicon-vacancy qubits in silicon carbide (SiC) are emerging tools in quantum technology applications due to their excellent optical and spin properties. In this paper, we explore the effect of temperature and strain on these properties by focusing on the two silicon-vacancy qubits, V1 and V2, in 4H SiC. We apply density functional theory beyond the Born-Oppenheimer approximation to describe the temperature dependent mixing of electronic excited states assisted by phonons. We obtain polaronic gap around 5 and 22~meV for V1 and V2 centers, respectively, that results in significant difference in the temperature dependent dephasing and zero-field splitting of the excited states, which explains recent experimental findings. We also compute how crystal deformations affect the zero-phonon-line of these emitters. Our predictions are important ingredients in any quantum applications of these qubits sensitive to these effects.

0 citations0 reviewsNo code linkedOpen access