Researcher profile

Carsten Rohr

Carsten Rohr contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2011arXiv

Predicting patterns for molecular self-organization on surfaces using interaction-site models

Molecular building blocks interacting at the nanoscale organize spontaneously into stable mono- layers that display intriguing long-range ordering motifs on the surface of atomic substrates. The patterning process, if appropriately controlled, represents a viable route to manufacture practical nanodevices. With this goal in mind, we seek to capture the salient features of the self-assembly process by means of an interaction-site model. The geometry of the building blocks, the symmetry of the underlying substrate, and the strength and range of interactions encode the self-assembly pro- cess. By means of Monte Carlo simulations, we have predicted an ample variety of ordering motifs which nicely reproduce the experimental results. Here, we explore in detail the phase behavior of the system in terms of the temperature and the lattice constant of the underlying substrate. Our method is suitable to investigate the stability of the emergent patterns as well as to identify the nature of the melting transition monitoring appropriate order parameters.

preprint2010arXiv

Modelling Multi Quantum Well Solar Cell Efficiency

The spectral response of quantum well solar cells (QWSCs) is well understood. We describe work on QWSC dark current theory which combined with SR theory yields a system efficiency. A methodology published for single quantum well (SQW) systems is extended to MQW systems in the Al(x) Ga(1-x) As and InGa(0.53x) As(x) P systems. The materials considered are dominated by Shockley-Read-Hall (SRH) recombination. The SRH formalism expresses the dark current in terms of carrier recombination through mid-gap traps. The SRH recombination rate depends on the electron and hole densities of states (DOS) in the barriers and wells, which are well known, and of carrier non-radiative lifetimes. These material quality dependent lifetimes are extracted from analysis of suitable bulk control samples. Consistency over a range of AlGaAs controls and QWSCs is examined, and the model is applied to QWSCs in InGaAsP on InP substrates. We find that the dark currents of MQW systems require a reduction of the quasi Fermi level separation between carrier populations in the wells relative to barrier material, in line with previous studies. Consequences for QWSCs are considered suggesting a high efficiency potential.