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Researcher profile

Carlos Diaz-Pinto

Carlos Diaz-Pinto contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-scicond-mat.str-elcond-mat.supr-con

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Published work

4 published item(s)

preprint2012arXiv

AB-Stacked Multilayer Graphene Synthesized via Chemical Vapor Deposition: A Characterization by Hot Carrier Transport

We report the synthesis of AB-stacked multilayer graphene via ambient pressure chemical vapor deposition on Cu foils, and demonstrate a method to construct suspended multilayer graphene devices. In four-terminal geometry, such devices were characterized by hot carrier transport at temperatures down to 240 mK and in magnetic fields up to 14 T. The differential conductance (dI/dV) shows a characteristic dip at longitudinal voltage bias V=0 at low temperatures, indicating the presence of hot electron effect due to a weak electron-phonon coupling. Under magnetic fields, the magnitude of the dI/dV dip diminishes through the enhanced intra-Landau level cyclotron phonon scattering. Our results provide new perspectives in obtaining and understanding AB-stacked multilayer graphene, important for future graphene-based applications.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Observation of multiple superconducting gaps in Fe1+yTe1-xSex via a nano-scale approach to point-contact spectroscopy

We report a distinct experimental approach to point-contact Andreev reflection spectroscopy with diagnostic capability via a unique design of nano-scale normal metal/superconductor devices with excellent thermo-mechanical stability, and have employed this method to unveil the existence of two superconducting energy gaps in iron chalcogenide Fe1+yTe1-xSex which is crucial for understanding its pairing mechanism. This work opens up new opportunities to study gap structures in superconductors and elemental excitations in solids.

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preprint2011arXiv

Tunable magnetoresistance behavior in suspended graphitic multilayers through ion implantation

We report a tunable magnetoresistance (MR) behavior in suspended graphitic multilayers through point defect engineering by ion implantation. We find that ion implantation drastically changes the MR behavior: the linear positive MR in pure graphitic multilayers transforms into a negative MR after introducing significant short-range disorders (implanted boron or carbon atoms), consistent with recent non-Markovian transport theory. Our experiments suggest the important role of the non-Markovian process in the intriguing MR behavior for graphitic systems, and open a new window for understanding transport phenomena beyond the Drude-Boltzmann approach and tailoring the electronic properties of graphitic layers.

0 citations0 reviewsNo code linkedOpen access