Researcher profile

Carlos A. F. Vaz

Carlos A. F. Vaz contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2022arXiv

Role of Dy on the magnetic properties of orthorhombic DyFeO3

Orthoferrites are a class of magnetic materials with a magnetic ordering temperature above 600 K, predominant G-type antiferromagnetic ordering of the Fe-spin system and, depending on the rare-earth ion, a spin reorientation of the Fe spin taking place at lower temperatures. DyFeO3 is of particular interest since the spin reorientation is classified as a Morin transition with the transition temperature depending strongly on the Dy-Fe interaction. Here, we report a detailed study of the magnetic and structural properties of microcrystalline DyFeO3 powder and bulk single crystal using neutron diffraction and magnetometry between 1.5 and 450 K. We find that, while the magnetic properties of the single crystal are largely as expected, the powder shows strongly modified magnetic properties, including a modified spin reorientation and a smaller Dy-Fe interaction energy of the order of 10 μeV. Subtle structural differences between powder and single crystal show that they belong to distinct magnetic space groups. In addition, the Dy ordering at 2 K in the powder is incommensurate, with a modulation vector of 0.0173(5) c*, corresponding to a periodicity of ~58 unit cells.

preprint2021arXiv

Scalable transparent conductive thin films with electronically passive interfaces for direct chemical vapor deposition of 2D materials

We present a novel transparent conductive support structure for two-dimensional (2D) materials that provides an electronically passive 2D/3D interface while also enabling facile interfacial charge transport. This structure, which comprises an evaporated nanocrystalline carbon (nc-C) film beneath an atomic layer deposited alumina (ALD AlOx) layer, is thermally stable and allows direct chemical vapor deposition (CVD) of 2D materials onto the surface. When the nc-C/AlOx is deposited onto a 270 nm SiO2 layer on Si, strong optical contrast for monolayer flakes is retained. Raman spectroscopy reveals good crystal quality for MoS2 and we observe a ten-fold photoluminescence intensity enhancement compared to flakes on conventional Si/SiO2. Tunneling across the ultrathin AlOx enables interfacial charge injection, which we demonstrate by artifact-free scanning electron microscopy and photoemission electron microscopy. Thus, this combination of scalable fabrication and electronic conductivity across a weakly interacting 2D/3D interface opens up new application and characterization opportunities for 2D materials.