Source author record

Cai-Zhen Li

Cai-Zhen Li appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

cond-mat.mes-hall cond-mat.mtrl-sci cond-mat.supr-con

Catalog footprint

What is connected

3works

3topics

4close collaborators

Actions

Connect this record

Open graph Browse works

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

preprint2020arXiv

Reducing electronic transport dimension to topological hinge states by increasing geometry size of Dirac semimetal Josephson junctions

The notion of topological phases has been extended to higher-order and has been generalized to different dimensions. As a paradigm, Cd3As2 is predicted to be a higher-order topological semimetal, possessing three-dimensional (3D) bulk Dirac fermions, two-dimensional (2D) Fermi arcs, and one-dimensional (1D) hinge states. These topological states have different characteristic length scales in electronic transport, allowing to distinguish their properties when changing sample size. Here, we report an anomalous dimensional reduction of supercurrent transport by increasing the size of Dirac semimetal Cd3As2-based Josephson junctions. An evolution of the supercurrent quantum interferences from a standard Fraunhofer pattern to a superconducting quantum interference device (SQUID)-like one is observed when the junction channel length is increased. The SQUID-like interference pattern indicates the supercurrent flowing through the 1D hinges. The identification of 1D hinge states should be valuable for deeper understanding the higher-order topological phase in a 3D Dirac semimetal.

preprint2016arXiv

Aharonov-Bohm oscillations in Dirac semimetal Cd3As2 nanowires

Three-dimensional Dirac semimetals, a three-dimensional analogue of graphene, are unusual quantum materials with massless Dirac fermions, which can be further converted to Weyl fermions by breaking time reversal or inversion symmetry. Topological surface states with Fermi arcs are predicted on the surface and have been observed by angle-resolved photoemission spectroscopy experiments. Although the exotic transport properties of the bulk Dirac cones have been demonstrated, it is still a challenge to reveal the surface states via transport measurements due to the highly conductive bulk states. Here, we show Aharonov-Bohm oscillations in individual single-crystal Cd3As2 nanowires with low carrier concentration and large surface-to-volume ratio, providing transport evidence of the surface state in three-dimensional Dirac semimetals. Moreover, the quantum transport can be modulated by tuning the Fermi level using a gate voltage, enabling a deeper understanding of rich physics residing in Dirac semimetals.

preprint2015arXiv

Giant negative magnetoresistance induced by the chiral anomaly in individual Cd3As2 nanowires

Cd3As2 is a newly booming Dirac semimetal with linear dispersion along all three momentum directions and can be viewed as 3D analog of graphene. As breaking of either time reversal symmetry or spatial inversion symmetry, the Dirac semimetal is believed to transform into Weyl semimetal with exotic chiral anomaly effect, while the experimental evidence of the chiral anomaly is still missing in Cd3As2. Here we report the magneto-transport properties of individual Cd3As2 nanowires. Large negative magnetoresistance (MR) with magnitude of -63% at 60 K and -11% at 300 K are observed when the magnetic field is parallel with the electric field direction, giving the evidence of the chiral magnetic effect in Cd3As2 nanowires. In addition, the critical magnetic field BC, where there is an extremum of the negative MR, increases with increasing temperature. As the first observation of chiral anomaly induced negative MR in Cd3As2 nanowires, it may offer valuable insights for low dimensional physics in Dirac semimetals.