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C. W. Rischau

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cond-mat.mes-hall cond-mat.mtrl-sci cond-mat.str-el cond-mat.supr-con

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preprint2021arXiv

Isotope tuning of the superconducting dome of strontium titanate

Doped strontium titanate SrTiO $_3$ (STO) is one of the most dilute superconductors known today. The fact that superconductivity occurs at very low carrier concentrations is one of the two reasons that the pairing mechanism is not yet understood, the other is the role played by the proximity to a ferroelectric instability. In undoped STO, ferroelectric order can in fact be stabilized by substituting $^{16}$ O with its heavier isotope $^{18}$ O. Here we explore the superconducting properties of doped and isotope-substituted SrTi $(^{18}$ O $_{y}^{16}$ O $_{1-y})_{3-δ}$ for $0\le y \le 0.81$ and carrier concentrations between $6\times 10^{17}$ and $2\times 10^{20}$ cm $^{-3}$ ( $δ<0.02$ ). We show that the superconducting $T_c$ increases when the $^{18}$ O concentration is increased. For carrier concentrations around $5\times 10^{19}$ ~cm $^{-3}$ this $T_c$ increase amounts to almost a factor $3$ , with $T_c$ as high as 580~mK for $y=0.74$ . When approaching SrTi $^{18}$ O $_3$ the maximum $T_c$ occurs at a much smaller carrier densities than for pure SrTi $^{16}$ O $_3$ . Our observations agree qualitatively with a scenario where superconducting pairing is mediated by fluctuations of the ferroelectric soft mode.

preprint2020arXiv

A possible mechanism for superconductivity in doped SrTiO3

The soft ferro-electric phonon in SrTiO3 observed with optical spectroscopy has an extraordinary strong spectral weight which is much stronger than expected in the limit of a perfectly ionic compound. The "charged phonon" in SrTiO3 is caused by the close-to-covalent character of the Ti-O ionic bond and implies a strong coupling between the soft ferro-electric phonon and the inter band transitions across the 3 eV gap of SrTiO3. We demonstrate that this coupling leads, in addition to the charged phonon effect, to a pairing interaction involving the exchange of two transverse optical phonons. This process owes its relevance to the strong electron-phonon coupling and to the fact that the interaction mediated by a single transverse optical phonon vanishes at low electron density. We use the experimental soft phonon spectral weight to calculate the strength of the bi-phonon mediated pairing interaction in the electron doped material and show that it is of the correct magnitude when compared to the experimental value of the superconducting critical temperature.

preprint2016arXiv

Charge puddles in a completely compensated topological insulator

Compensation of intrinsic charges is widely used to reduce the bulk conductivity of 3D topological insulators (TIs). Here we use low temperature electron irradiation-induced defects paired with in-situ electrical transport measurements to fine-tune the degree of compensation in Bi2Te3. The coexistence of electrons and holes at the point of optimal compensation can only be explained by bulk carriers forming charge puddles. These need to be considered to understand the electric transport in compensated TI samples, irrespective of the method of compensation.

preprint2013arXiv

Doping of Bi2Te3 using electron irradiation

Electron irradiation is investigated as a way to dope the topological insulator Bi2Te3. For this, p-type Bi2Te3 single crystals have been irradiated with 2.5 MeV electrons at room temperature and electrical measurements have been performed in-situ as well as ex-situ in magnetic fields up to 14 T. The defects created by irradiation act as electron donors allowing the compensation of the initial hole-type conductivity of the material as well as the conversion of the conductivity from p- to n-type. The changes in carrier concentration are investigated using Hall effect and Shubnikov-de Haas (SdH) oscillations, clearly observable in the p-type samples before irradiation, but also after the irradiation-induced conversion of the conductivity to n-type. The SdH patterns observed for the magnetic field along the trigonal axis can be entirely explained assuming the contribution of only one valence and conduction band, respectively, and Zeeman-splitting of the orbital levels.

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