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C. Volk

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Published work

8 published item(s)

preprint2022arXiv

Spin relaxation in a single-electron graphene quantum dot

The relaxation time of a single-electron spin is an important parameter for solid-state spin qubits, as it directly limits the lifetime of the encoded information. Thanks to the low spin-orbit interaction and low hyperfine coupling, graphene and bilayer graphene (BLG) have long been considered promising platforms for spin qubits. Only recently, it has become possible to control single-electrons in BLG quantum dots (QDs) and to understand their spin-valley texture, while the relaxation dynamics have remained mostly unexplored. Here, we report spin relaxation times ($T_1$) of single-electron states in BLG QDs. Using pulsed-gate spectroscopy, we extract relaxation times exceeding 200 $μ$s at a magnetic field of 1.9 T. The $T_1$ values show a strong dependence on the spin splitting, promising even longer $T_1$ at lower magnetic fields, where our measurements are limited by the signal-to-noise ratio. The relaxation times are more than two orders of magnitude larger than those previously reported for carbon-based QDs, suggesting that graphene is a potentially promising host material for scalable spin qubits.

preprint2019arXiv

Insulating state in low-disorder graphene nanoribbons

We report on quantum transport measurements on etched graphene nanoribbons encapsulated in hexagonal boron nitride (hBN). At zero magnetic field our devices behave qualitatively very similar to what has been reported for graphene nanoribbons on $\text{SiO}_2$ or hBN, but exhibit a considerable smaller transport gap. At magnetic fields of around $3~$T the transport behavior changes considerably and is dominated by a much larger energy gap induced by electron-electron interactions completely suppressing transport. This energy gap increases with a slope on the order of $3-4~ $meV/T reaching values of up to $ 30~\mathrm{meV} $ at $ 9~ $T.

preprint2019arXiv

Quantum Dot Arrays in Silicon and Germanium

Electrons and holes confined in quantum dots define an excellent building block for quantum emergence, simulation, and computation. In order for quantum electronics to become practical, large numbers of quantum dots will be required, necessitating the fabrication of scaled structures such as linear and 2D arrays. Group IV semiconductors contain stable isotopes with zero nuclear spin and can thereby serve as excellent host for spins with long quantum coherence. Here we demonstrate group IV quantum dot arrays in silicon metal-oxide-semiconductor (SiMOS), strained silicon (Si/SiGe) and strained germanium (Ge/SiGe). We fabricate using a multi-layer technique to achieve tightly confined quantum dots and compare integration processes. While SiMOS can benefit from a larger temperature budget and Ge/SiGe can make ohmic contact to metals, the overlapping gate structure to define the quantum dots can be based on a nearly identical integration. We realize charge sensing in each platform, for the first time in Ge/SiGe, and demonstrate fully functional linear and two-dimensional arrays where all quantum dots can be depleted to the last charge state. In Si/SiGe, we tune a quintuple quantum dot using the N+1 method to simultaneously reach the few electron regime for each quantum dot. We compare capacitive cross talk and find it to be the smallest in SiMOS, relevant for the tuning of quantum dot arrays. These results constitute an excellent base for quantum computation with quantum dots and provide opportunities for each platform to be integrated with standard semiconductor manufacturing.

preprint2013arXiv

Etched graphene quantum dots on hexagonal boron nitride

We report on the fabrication and characterization of etched graphene quantum dots (QDs) on hexagonal boron nitride (hBN) and SiO2 with different island diameters. We perform a statistical analysis of Coulomb peak spacings over a wide energy range. For graphene QDs on hBN, the standard deviation of the normalized peak spacing distribution decreases with increasing QD diameter, whereas for QDs on SiO2 no diameter dependency is observed. In addition, QDs on hBN are more stable under the influence of perpendicular magnetic fields up to 9T. Both results indicate a substantially reduced substrate induced disorder potential in graphene QDs on hBN.

preprint2013arXiv

Etched graphene single electron transistors on hexagonal boron nitride in high magnetic fields

We report on the fabrication and electrical characterisation of etched graphene single electron transistors (SETs) of various sizes on hexagonal boron nitride (hBN) in high magnetic fields. The electronic transport measurements show a slight improvement compared to graphene SETs on SiO2. In particular, SETs on hBN are more stable under the influence of perpendicular magnetic fields up to 9T in contrast to measurements reported on SETs on SiO2. This result indicates a reduced surface disorder potential in SETs on hBN which might be an important step towards clean and more controllable graphene QDs.

preprint2013arXiv

Graphene-based charge sensors

We discuss graphene nanoribbon-based charge sensors and focus on their functionality in the presence of external magnetic fields and high frequency pulses applied to a nearby gate electrode. The charge detectors work well with in-plane magnetic fields of up to 7 T and pulse frequencies of up to 20 MHz. By analyzing the step height in the charge detector's current at individual charging events in a nearby quantum dot, we determine the ideal operation conditions with respect to the applied charge detector bias. Average charge sensitivities of 1.3*10^-3 e/sqrt{Hz} can be achieved. Additionally, we investigate the back action of the charge detector current on the quantum transport through a nearby quantum dot. By setting the charge detector bias from 0 to 4.5 mV, we can increase the Coulomb peak currents measured at the quantum dot by a factor of around 400. Furthermore, we can completely lift the Coulomb blockade in the quantum dot.

preprint2013arXiv

Transport in coupled graphene-nanotube quantum devices

We report on the fabrication and characterization of all-carbon hybrid quantum devices based on graphene and single-walled carbon nanotubes. We discuss both, carbon nanotube quantum dot devices with graphene charge detectors and nanotube quantum dots with graphene leads. The devices are fabricated by chemical vapor deposition growth of carbon nanotubes and subsequent structuring of mechanically exfoliated graphene. We study the detection of individual charging events in the carbon nanotube quantum dot by a nearby graphene nanoribbon and show that they lead to changes of up to 20% of the conductance maxima in the graphene nanoribbon acting as a good performing charge detector. Moreover, we discuss an electrically coupled graphene-nanotube junction, which exhibits a tunneling barrier with tunneling rates in the low GHz regime. This allows to observe Coulomb blockade on a carbon nanotube quantum dot with graphene source and drain leads.

preprint2011arXiv

Disorder induced Coulomb gaps in graphene constrictions with different aspect ratios

We present electron transport measurements on lithographically defined and etched graphene nanoconstrictions with different aspect ratios including different lengths (L) and widths (W). A roughly length-independent disorder induced effective energy gap can be observed around the charge neutrality point. This energy gap scales inversely with the width even in regimes where the length of the constriction is smaller than its width (L<W). In very short constrictions, we observe both resonances due to localized states or charged islands and an elevated overall conductance level (0.1-1e2/h), which is strongly length-dependent in the gap region. This makes very short graphene constrictions interesting for highly transparent graphene tunneling barriers.