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Researcher profile

C. T. Foxon

C. T. Foxon contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-sci

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Published work

5 published item(s)

preprint2013arXiv

High Curie temperatures at low compensation in the ferromagnetic semiconductor (Ga,Mn)As

We investigate the relationship between the Curie temperature TC and the carrier density p in the ferromagnetic semiconductor (Ga,Mn)As. Carrier densities are extracted from analysis of the Hall resistance at low temperatures and high magnetic fields. Results are found to be consistent with ion channeling measurements when performed on the same samples. We find that both TC and the electrical conductivity increase monotonically with increasing p, and take their largest values when p is comparable to the concentration of substitutional Mn acceptors. This is inconsistent with models in which the Fermi level is located within a narrow isolated impurity band.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Correspondence on "Controlling the Curie temperature in (Ga,Mn)As through location of the Fermi level within the impurity band" by M. Dobrowolska et al

Comment on the recent Nature Materials article by M. Dobrowolska et al., arXiv:1203.1852. We present experimental data showing that the Curie temperature and conductivity of high quality (Ga,Mn)As samples are maximized at low compensation, and thus the magnetic order in (Ga,Mn)As is not consistent with the isolated impurity band scenario.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Antiferromagnetic I-Mn-V semiconductors

After decades of research, the low Curie temperature of ferromagnetic semiconductors remains the key problem in the development of magnetic semiconductor spintronic technologies. Removing this roadblock might require a change of the field's basic materials paradigm by looking beyond ferromagnets. Recent studies of relativistic magnetic and magnetotransport anisotropy effects, which in principle are equally well present in materials with ferromagnetically and antiferromagnetically ordered spins, have inspired our search for antiferromagnetic semiconductors suitable for high-temperature spintronics. Since these are not found among the magnetic counterparts of common III-V or II-VI semi- conductors, we turn the attention in this paper to high N éel temperature I-II-V magnetic compounds whose electronic structure has not been previously identified. Our combined experimental and theoretical work on LiMnAs provides basic prerequisite for the systematic research of this class of materials by demonstrating the feasibility to grow single crystals of group-I alkali metal compounds by molecular beam epitaxy, by demonstrating the semiconducting band structure of the I-Mn-V's, and by analyzing their spin-orbit coupling characteristics favorable for spintronics.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Exchange bias of a ferromagnetic semiconductor by a ferromagnetic metal

We demonstrate an exchange bias in (Ga,Mn)As induced by antiferromagnetic coupling to a thin overlayer of Fe. Bias fields of up to 240 Oe are observed. Using element-specific x-ray magnetic circular dichroism measurements, we distinguish a strongly exchange coupled (Ga,Mn)As interface layer in addition to the biassed bulk of the (Ga,Mn)As film. The interface layer remains polarized at room temperature.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Simulating multiple quantum well solar cells

The quantum well solar cell (QWSC) has been proposed as a route to higher efficiency than that attainable by homojunction devices. Previous studies have established that carriers escape the quantum wells with high efficiency in forward bias and contribute to the photocurrent. Progress in resolving the efficiency limits of these cells has been dogged by the lack of a theoretical model reproducing both the enhanced carrier gen- eration and enhanced recombination due to the quantum wells. Here we present a model which calculates the incremental generation and recombination due to the QWs and is verified by modelling the experimental light and dark current-voltage characteristics of a range of III-V quantum well structures. We find that predicted dark currents are significantly greater than experiment if we use lifetimes derived from homostructure devices. Successful simulation of light and dark currents can be obtained only by introducing a parameter which represents a reduction in the quasi-Fermi level separation.

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