Ferromagnetism and spin polarized charge carriers in InO thin films
We present evidence for spin polarized charge carriers in InO films. Both InO and Cr doped InO films exhibit room temperature ferromagnetism after vacuum annealing, with a saturation moment of approximately 0.5 emu/cm. We used Point Contact Andreev Reflection measurements to directly determine the spin polarization, which was found to be approximately 505% for both compositions. These results are consistent with suggestions that the ferromagnetism observed in certain oxide semiconductors may be carrier mediated.