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C. Rossler

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Published work

4 published item(s)

preprint2014arXiv

Resonant electron tunneling in a tip-controlled potential landscape

By placing the biased tip of an atomic force microscope at a specific position above a semiconductor surface we can locally shape the potential landscape. Inducing a local repulsive potential in a two dimensional electron gas near a quantum point contact one obtains a potential minimum which exhibits a remarkable behavior in transport experiments at high magnetic fields and low temperatures. In such an experiment we observe distinct and reproducible oscillations in the measured conductance as a function of magnetic field, voltages and tip position. They follow a systematic behavior consistent with a resonant tunneling mechanism. From the periodicity in magnetic field we can find the characteristic width of this minimum to be of the order of 100 nm. Surprisingly, this value remains almost the same for different values of the bulk filling factors, although the tip position has to be adjusted by distances of the order of one micron.

preprint2010arXiv

Gating of high-mobility two-dimensional electron gases in GaAs/AlGaAs heterostructures

We investigate high-mobility two-dimensional electron gases in AlGaAs heterostructures by employing Schottky-gate-dependent measurements of the samples' electron density and mobility. Surprisingly, we find that two different sample configurations can be set in situ with mobilities diering by a factor of more than two in a wide range of densities. This observation is discussed in view of charge redistributions between the doping layers and is relevant for the design of future gateable high-mobility electron gases.

preprint2009arXiv

Magneto-electrical subbands of freely suspended quantum point contacts

We present a versatile design of freely suspended quantum point contacts with particular large one-dimensional subband quantization energies of up to 10meV. The nanoscale bridges embedding a two-dimensional electron system are fabricated from AlGaAs/GaAs heterostructures by electron-beam lithography and etching techniques. Narrow constrictions define quantum point contacts that are capacitively controlled via local in-plane side gates. Employing transport spectroscopy, we investigate the transition from electrostatic subbands to Landau-quantization in a perpendicular magnetic field. The large subband quantization energies allow us to utilize a wide magnetic field range and thereby observe a large exchange splitted spin-gap of the two lowest Landau-levels.

preprint2008arXiv

Optically induced transport properties of freely suspended semiconductor submicron channels

We report on optically induced transport phenomena in freely suspended channels containing a two-dimensional electron gas (2DEG). The submicron devices are fabricated in AlGaAs/GaAs heterostructures by etching techniques. The photoresponse of the devices can be understood in terms of the combination of photogating and a photodoping effect. The hereby enhanced electronic conductance exhibits a time constant in the range of one to ten milliseconds.