Source author record

C. R. Staddon

C. R. Staddon appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

cond-mat.mtrl-sci cond-mat.mes-hall

Catalog footprint

What is connected

3works

2topics

4close collaborators

Actions

Connect this record

Open graph Browse works

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

preprint2012arXiv

Non-volatile voltage control of magnetization and magnetic domain walls in magnetostrictive epitaxial thin films

We demonstrate reproducible voltage induced non-volatile switching of the magnetization in an epitaxial thin Fe81Ga19 film. Switching is induced at room temperature and without the aid of an external magnetic field. This is achieved by the modification of the magnetic anisotropy by mechanical strain induced by a piezoelectric transducer attached to the layer. Epitaxial Fe81Ga19 is shown to possess the favourable combination of cubic magnetic anisotropy and large magnetostriction necessary to achieve this functionality with experimentally accessible levels of strain. The switching of the magnetization proceeds by the motion of magnetic domain walls, also controlled by the voltage induced strain.

preprint2010arXiv

Tuning perpendicular magnetic anisotropy in (Ga,Mn)(As,P) by thermal annealing

We have investigated the effects of post growth low temperature annealing on the magnetic, electrical and structural properties of (Ga_0.94,Mn_0.06)(As_0.9,P_0.1) layers grown by molecular beam epitaxy. By controlling the annealing time we are able to tune the magnetic anisotropy between an easy axis in the plane for the as-grown samples, to an easy axis perpendicular to the plane for fully annealed samples. The increase of the carrier density, as a result of annealing, is found to be the primary reason for the change in magnetic anisotropy, in qualitative agreement with theoretical predictions.

preprint2004arXiv

Transport and Magnetism in p-type cubic (Ga,Mn)N

The electrical and magnetic properties of p-type cubic (Ga,Mn)N thin films grown by plasma-assisted molecular beam epitaxy are reported. Hole concentrations in excess of 1018 cm-3 at room temperature are observed. Activated behaviour is observed down to around 150K, characterised by an acceptor ionisation energy of around 45-60meV. The dependence of hole concentration and ionisation energy on Mn concentration indicates that the shallow acceptor level is not simply due to unintentional co-doping. Thermopower measurements on freestanding films, CV profilometry, and the dependence of conductivity on thickness and growth temperature, all show that the conduction is not due to diffusion into the substrate. We therefore associate the p-type conductivity with the presence of the Mn in the cubic GaN films. Magnetometry measurements indicate a small room temperature ferromagnetic phase, and a significantly larger magnetic coupling at low temperatures.