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C. Monat

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physics.optics cond-mat.other

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preprint2015arXiv

Optical performance monitoring at 640Gb/s via slow-light in a silicon nanowire

We demonstrate optical performance monitoring of in-band optical signal to noise ratio (OSNR) and residual dispersion, at bit rates of 40Gb/s, 160Gb/s and 640Gb/s, using slow-light enhanced optical third harmonic generation (THG) in a compact (80 micron) dispersion engineered 2D silicon photonic crystal waveguide. We show that there is no intrinsic degradation in the enhancement of the signal processing at 640 Gb/s relative to that at 40Gb/s, and that this device should operate well above 1Tb/s. This work represents a record 16-fold increase in processing speed for a silicon device, and opens the door for slow light to play a key role in ultra-high bandwidth telecommunications systems.

preprint2014arXiv

Amorphous Silicon Nanowires with Low Two-Photon Absorption, High Nonlinearity and Good Stability

We demonstrate optically stable amorphous silicon nanowires with both high nonlinear figure of merit (FOM) of ~5 and high nonlinearity Re(γ) = 1200W-1m-1.

preprint2014arXiv

High Kerr nonlinearity hydrogenated amorphous silicon nanowires with low two photon absorption and high optical stability

We demonstrate optically stable amorphous silicon nanowires with both high nonlinear figure of merit (FOM) of ~5 and high nonlinearity Re(γ) = 1200W-1m-1. We observe no degradation in these parameters over the entire course of our experiments including systematic study under operation at 2 W coupled peak power (i.e. ~2GW/cm2) over timescales of at least an hour.

preprint2006arXiv

Time resolved measurements on low-density single quantum dots at 1300nm

We present time integrated and time resolved measurements on single In/As quantum dots (QD) emitting at 1300nm, at 10K, embedded in a planar microcavity. We clearly identify a standard spectroscopic signature from single QDs and compare the exciton line width and biexciton (BX) binding energy for several QDs. We present this data for QDs spatially selected by etched mesas and metallic apertures. Time resolved photoluminescence (PL) from single electron-hole recombination in the ground state of the QD is investigated as a function of excitation power and temperature. The measurements reveal the presence of a background emission that delays the PL of excitons in the ground state.