Researcher profile

C. Magén

C. Magén contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate

Trust snapshot

Quick read

Trust 13 - UnverifiedVerification L1Unclaimed author
2works
0followers
3topics
4close collaborators

Actions

Decide how to stay connected

Follow researcher0

Identity and collaboration

How to connect with this researcher

Claiming links this public author record to a researcher profile and unlocks direct collaboration workflows.

Log in to claim

Direct collaboration

Open a focused conversation when the fit is right

Claim this author entity first to unlock direct invitations.

Research graph

See the researcher in context

Open full explorer

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this graph slice

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

2 published item(s)

preprint2019arXiv

Nanowire magnetic force sensors fabricated by focused electron beam induced deposition

We demonstrate the use of individual magnetic nanowires (NWs), grown by focused electron beam induced deposition (FEBID), as scanning magnetic force sensors. Measurements of their mechanical susceptibility, thermal motion, and magnetic response show that the NWs posses high-quality flexural mechanical modes and a strong remanent magnetization pointing along their long axis. Together, these properties make the NWs excellent sensors of weak magnetic field patterns, as confirmed by calibration measurements on a micron-sized current-carrying wire and magnetic scanning probe images of a permalloy disk. The flexibility of FEBID in terms of the composition, geometry, and growth location of the resulting NWs, makes it ideal for fabricating scanning probes specifically designed for imaging subtle patterns of magnetization or current density.

preprint2014arXiv

Screening of the quantum-confined Stark effect in AlN/GaN nanowire superlattices by Germanium doping

We report on electrostatic screening of polarization-induced internal electric fields in AlN/GaN nanowire heterostructures with Germanium-doped GaN nanodiscs embedded between AlN barriers. The incorporation of Germanium at concentrations above $10^{20}\,\text{cm}^{-3}$ shifts the photoluminescence emission energy of GaN nanodiscs to higher energies accompanied by a decrease of the photoluminescence decay time. At the same time, the thickness-dependent shift in emission energy is significantly reduced. In spite of the high donor concentration a degradation of the photoluminescence properties is not observed.