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C. -M. Cheng

C. -M. Cheng appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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Published work

3 published item(s)

preprint2020arXiv

Surface-state Coulomb repulsion accelerates a metal-insulator transition in topological semimetal nanofilms

The emergence of quantization at the nanoscale, the quantum size effect (QSE), allows flexible control of matter and is a rich source of advanced functionalities. A QSE-induced transition into an insulating phase in semimetallic nanofilms was predicted for bismuth a half-century ago and has regained new interest with regard to its surface states exhibiting nontrivial electronic topology. Here, we reveal an unexpected mechanism of the transition by high-resolution angle-resolved photoelectron spectroscopy combined with theoretical calculations. Anomalous evolution and degeneracy of quantized energy levels indicate that increased Coulomb repulsion from the surface states deforms a quantum confinement potential with decreasing thickness. The potential deformation drastically modulates spatial distributions of quantized wave functions, which leads to acceleration of the transition even beyond the original QSE picture. This discovery establishes a complete picture of the long-discussed problem in bismuth and highlights the new class of size effects dominating nanoscale transport in systems with metallic surface states.

preprint2016arXiv

Proving Nontrivial Topology of Pure Bismuth by Quantum Confinement

The topology of pure Bi is controversial because of its very small ($\sim$10 meV) band gap. Here we perform high-resolution angle-resolved photoelectron spectroscopy measurements systematically on 14$-$202 bilayers Bi films. Using high-quality films, we succeed in observing quantized bulk bands with energy separations down to $\sim$10 meV. Detailed analyses on the phase shift of the confined wave functions precisely determine the surface and bulk electronic structures, which unambiguously show nontrivial topology. The present results not only prove the fundamental property of Bi but also introduce a capability of the quantum-confinement approach.

preprint2013arXiv

THz Generation and Detection on Dirac Fermions in Topological Insulators

This study shows that a terahertz (THz) wave can be generated from the (001) surface of cleaved Bi$_{\textrm{2}}$Se$_{\textrm{3}}$ and Cu-doped Bi$_{\textrm{2}}$Se$_{\textrm{3}}$ single crystals using 800 nm femtosecond pulses. The generated THz power is strongly dependent on the carrier concentration of the crystals. An examination of the dependence reveals the two-channel free carrier absorption to which Dirac fermions are indispensable. Dirac fermions in Bi$_{\textrm{2}}$Se$_{\textrm{3}}$ are significantly better absorbers of THz radiation than bulk carriers at room temperature. Moreover, the characteristics of THz emission confirm the existence of a recently proposed surface phonon branch that is normalized by Dirac fermions.