Researcher profile

C. L. Yang

C. L. Yang contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hall cond-mat.mtrl-sci cond-mat.other cond-mat.str-el

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preprint2014arXiv

Kondo effect in a novel 5d quasi-skutterudite Yb3Os4Ge13

We report the crystal growth of a new compound, Yb3Os4Ge13, by using a Bi-flux method. X-ray diffraction measurement shows that it crystallizes in the quasi-skutterudite-type caged structure with a cubic space group of Pm-3n (No. 223). Magnetic measurements reveal almost fully localized Yb f-moments above 120 K. The resistivity exhibits a crossover from metallic to insulating behavior with a logarithmic increase below ~ 40 K. The specific heat coefficient shows a rapid upturn below ~5 K and exceeds 2 J mol-1 K-2 at 2 K. Our experimental analysis and electronic band structure calculations demonstrate that Yb3Os4Ge13 exhibits the Kondo effect due to strong hybridization of the localized Yb f-moments with the p-electrons of the surrounding Ge-cages.

preprint2011arXiv

Shubnikov-de Haas oscillations of a single layer graphene under dc current bias

Shubnikov-de Haas (SdH) oscillations under a dc current bias are experimentally studied on a Hall bar sample of single layer graphene. In dc resistance, the bias current shows the common damping effect on the SdH oscillations and the effect can be well accounted for by an elevated electron temperature that is found to be linearly dependent on the current bias. In differential resistance, a novel phase inversion of the SdH oscillations has been observed with increasing dc bias, namely we observe the oscillation maxima develop into minima and vice versa. Moreover, it is found that the onset biasing current, at which a SdH extremum is about to invert, is linearly dependent on the magnetic field of the SdH extrema. These observations are quantitatively explained with the help of a general SdH formula.

preprint2010arXiv

Gate-Voltage Control of Chemical Potential and Weak Anti-localization in Bismuth Selenide

We report that Bi$_2$Se$_3$ thin films can be epitaxially grown on SrTiO$_{3}$ substrates, which allow for very large tunablity in carrier density with a back-gate. The observed low field magnetoconductivity due to weak anti-localization (WAL) has a very weak gate-voltage dependence unless the electron density is reduced to very low values. Such a transition in WAL is correlated with unusual changes in longitudinal and Hall resistivities. Our results suggest much suppressed bulk conductivity at large negative gate-voltages and a possible role of surface states in the WAL phenomena. This work may pave a way for realizing three-dimensional topological insulators at ambient conditions.

preprint2010arXiv

Magneto-electric photocurrent generated by direct inter-band transitions in InGaAs/InAlAs two-dimensional electron gas

We report observation of magneto-electric photocurrent generated via direct inter-band transitions in an InGaAs/InAlAs two-dimensional electron gas excited by a linearly polarized incident light.The electric current is proportional to the in-plane magnetic field which unbalances the velocities of the photoexcited carriers with opposite spins and consequently generates electric current from a spin photocurrent. The observed light polarization dependence of the electric current is explained microscopically by taking into account of the anisotropy of the photoexcited carrier density in wave vector space. The spin photocurrent can be extracted from the measured current and the conversion coefficient of spin photocurrent to electric current is estimated to be $10^{-3}$$\sim$$10^{-2}$ per Tesla.

preprint2009arXiv

Determination of the Sign of g factors for Conduction Electrons Using Time-resolved Kerr Rotation

The knowledge of electron g factor is essential for spin manipulation in the field of spintronics and quantum computing. While there exist technical difficulties in determining the sign of g factor in semiconductors by the established magneto-optical spectroscopic methods. We develop a time resolved Kerr rotation technique to precisely measure the sign and the amplitude of electron g factor in semiconductors.