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Source author record

C. J. Wellard

C. J. Wellard appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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quant-phcond-mat.mes-hallcond-mat.other

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Published work

3 published item(s)

preprint2005arXiv

Spin transport and quasi 2D architectures for donor-based quantum computing

Through the introduction of a new electron spin transport mechanism, a 2D donor electron spin quantum computer architecture is proposed. This design addresses major technical issues in the original Kane design, including spatial oscillations in the exchange coupling strength and cross-talk in gate control. It is also expected that the introduction of a degree of non-locality in qubit gates will significantly improve the scaling fault-tolerant threshold over the nearest-neighbour linear array.

0 citations0 reviewsNo code linkedOpen access
preprint2004arXiv

Global control and fast solid-state donor electron spin quantum computing

We propose a scheme for quantum information processing based on donor electron spins in semiconductors, with an architecture complementary to the original Kane proposal. We show that a naive implementation of electron spin qubits provides only modest improvement over the Kane scheme, however through the introduction of global gate control we are able to take full advantage of the fast electron evolution timescales. We estimate that the latent clock speed is 100-1000 times that of the nuclear spin quantum computer with the ratio $T_{2}/T_{ops}$ approaching the $10^{6}$ level.

0 citations0 reviewsNo code linkedOpen access
preprint2004arXiv

Single-spin readout for buried dopant semiconductor qubits

In the design of quantum computer architectures that take advantage of the long coherence times of dopant nuclear and electron spins in the solid-state, single-spin detection for readout remains a crucial unsolved problem. Schemes based on adiabatically induced spin-dependent electron tunnelling between individual donor atoms, detected using a single electron transistor (SET) as an ultra-sensitive electrometer, are thought to be problematic because of the low ionisaton energy of the final D- state. In this paper we analyse the adiabatic scheme in detail. We find that despite significant stabilization due to the presence of the D+, the field strengths required for the transition lead to a shortened dwell-time placing severe constraints on the SET measurement time. We therefore investigate a new method based on resonant electron transfer, which operates with much reduced field strengths. Various issues in the implementation of this method are also discussed.

0 citations0 reviewsNo code linkedOpen access