Researcher profile

C. Hopfmann

C. Hopfmann contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2015arXiv

Generating single photons at GHz modulation-speed using electrically controlled quantum dot microlenses

We report on the generation of single-photon pulse trains at a repetition rate of up to 1 GHz. We achieve this high speed by modulating the external voltage applied on an electrically contacted quantum dot microlens, which is optically excited by a continuous-wave laser. By modulating the photoluminescence of the quantum dot microlens using a square-wave voltage, single-photon emission is triggered with a response time as short as 270 ps being 6.5 times faster than the radiative lifetime of 1.75 ns. This large reduction in the characteristic emission time is enabled by a rapid capacitive gating of emission from the quantum dot placed in the intrinsic region of a p-i-n-junction biased below the onset of electroluminescence. Here, the rising edge of the applied voltage pulses triggers the emission of single photons from the optically excited quantum dot. The non-classical nature of the photon pulse train generated at GHz-speed is proven by intensity autocorrelation measurements. Our results combine optical excitation with fast electrical gating and thus show promise for the generation of indistinguishable single photons at high rates, exceeding the limitations set by the intrinsic radiative lifetime.

preprint2013arXiv

Intensity fluctuations in bimodal micropillar lasers enhanced by quantum-dot gain competition

We investigate correlations between orthogonally polarized cavity modes of a bimodal micropillar laser with a single layer of self-assembled quantum dots in the active region. While one emission mode of the microlaser demonstrates a characteristic s-shaped input-output curve, the output intensity of the second mode saturates and even decreases with increasing injection current above threshold. Measuring the photon auto-correlation function g^{(2)}(τ) of the light emission confirms the onset of lasing in the first mode with g^{(2)}(0) approaching unity above threshold. In contrast, strong photon bunching associated with super-thermal values of g^{(2)}(0) is detected for the other mode for currents above threshold. This behavior is attributed to gain competition of the two modes induced by the common gain material, which is confirmed by photon crosscorrelation measurements revealing a clear anti-correlation between emission events of the two modes. The experimental studies are in excellent qualitative agreement with theoretical studies based on a microscopic semiconductor theory, which we extend to the case of two modes interacting with the common gain medium. Moreover, we treat the problem by an extended birth-death model for two interacting modes, which reveals, that the photon probability distribution of each mode has a double peak structure, indicating switching behavior of the modes for the pump rates around threshold.