BZPEERPapers, people, evidence and research paths
Menu

Discover

SearchFind papers, people, topics, institutions and opportunities from one place.GraphSee how papers, authors, topics and evidence connect.

Research tools

HomeContinue from the papers, people and topics that matter now.CollectionsTurn saved papers into reading lists, evidence maps and shareable context.ResearchReconstruct the path that led you from search to paper to question.CollaborationMove from a paper, topic or expert request into a focused thread.PublishCreate full-text research articles with metadata, formulas and versions.

Network

ExpertsFind specialists whose work and reviews explain why they can help.CommunitiesJoin research groups organized around papers, topics and shared evidence.

Opportunities

ListingsBrowse roles, calls and collaborations connected to real research context.

Account

Log inReturn to your saved papers, graph views and active threads.Create accountStart saving papers, building a research trail and joining teams.
Log inCreate account

Source author record

C. Gallrapp

C. Gallrapp appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record
physics.ins-dethep-ex

Catalog footprint

What is connected

8works
2topics
4close collaborators

Actions

Connect this record

Log in to claim
Open graphBrowse works

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

8 published item(s)

preprint2015arXiv

Recent Technological Developments on LGAD and iLGAD Detectors for Tracking and Timing Applications

This paper reports the last technological development on the Low Gain Avalanche Detector (LGAD) and introduces a new architecture of these detectors called inverse-LGAD (iLGAD). Both approaches are based on the standard Avalanche Photo Diodes (APD) concept, commonly used in optical and X-ray detection applications, including an internal multiplication of the charge generated by radiation. The multiplication is inherent to the basic n++-p+-p structure, where the doping profile of the p+ layer is optimized to achieve high field and high impact ionization at the junction. The LGAD structures are optimized for applications such as tracking or timing detectors for high energy physics experiments or medical applications where time resolution lower than 30 ps is required. Detailed TCAD device simulations together with the electrical and charge collection measurements are presented through this work.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Characterization of proton irradiated 3D-DDTC pixel sensor prototypes fabricated at FBK

In this paper we discuss results relevant to 3D Double-Side Double Type Column (3D-DDTC) pixel sensors fabricated at FBK (Trento, Italy) and oriented to the ATLAS upgrade. Some assemblies of these sensors featuring different columnar electrode configurations (2, 3, or 4 columns per pixel) and coupled to the ATLAS FEI3 read-out chip were irradiated up to large proton fluences and tested in laboratory with radioactive sources. In spite of the non optimized columnar electrode overlap, sensors exhibit reasonably good charge collection properties up to an irradiation fluence of 2 x 10**15 neq/cm2, while requiring bias voltages in the order of 100 V. Sensor operation is further investigated by means of TCAD simulations which can effectively explain the basic mechanisms responsible for charge loss after irradiation.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Novel Silicon n-in-p Pixel Sensors for the future ATLAS Upgrades

In view of the LHC upgrade phases towards HL-LHC the ATLAS experiment plans to upgrade the Inner Detector with an all silicon system. The n-in-p silicon technology is a promising candidate for the pixel upgrade thanks to its radiation hardness and cost effectiveness, that allow for enlarging the area instrumented with pixel detectors. We present the characterization and performance of novel n-in-p planar pixel sensors produced by CiS (Germany) connected by bump bonding to the ATLAS readout chip FE-I3. These results are obtained before and after irradiation up to a fluence of 10^16 1-MeV n_eq/cm^2, and prove the operability of this kind of sensors in the harsh radiation environment foreseen for the pixel system at HL-LHC. We also present an overview of the new pixel production, which is on-going at CiS for sensors compatible with the new ATLAS readout chip FE-I4.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Performance of n-in-p pixel detectors irradiated at fluences up to 5x10**15 neq/cm**2 for the future ATLAS upgrades

We present the results of the characterization of novel n-in-p planar pixel detectors, designed for the future upgrades of the ATLAS pixel system. N-in-p silicon devices are a promising candidate to replace the n-in-n sensors thanks to their radiation hardness and cost effectiveness, that allow for enlarging the area instrumented with pixel detectors. The n-in-p modules presented here are composed of pixel sensors produced by CiS connected by bump-bonding to the ATLAS readout chip FE-I3. The characterization of these devices has been performed with the ATLAS pixel read-out systems, TurboDAQ and USBPIX, before and after irradiation with 25 MeV protons and neutrons up to a fluence of 5x10**15 neq /cm2. The charge collection measurements carried out with radioactive sources have proven the feasibility of employing this kind of detectors up to these particle fluences. The collected charge has been measured to be for any fluence in excess of twice the value of the FE-I3 threshold, tuned to 3200 e. The first results from beam test data with 120 GeV pions at the CERN-SPS are also presented, demonstrating a high tracking efficiency before irradiation and a high collected charge for a device irradiated at 10**15 neq /cm2. This work has been performed within the framework of the RD50 Collaboration.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Performance of novel silicon n-in-p planar Pixel Sensors

The performance of novel n-in-p planar pixel detectors, designed for future upgrades of the ATLAS Pixel system is presented. The n-in-p silicon sensors technology is a promising candidate for the pixel upgrade thanks to its radiation hardness and cost effectiveness, that allow for enlarging the area instrumented with pixel detectors. The n-in-p modules presented here are composed of pixel sensors produced by CiS connected by bump-bonding to the ATLAS readout chip FE-I3. The characterization of these devices has been performed before and after irradiation up to a fluence of 5 x 10**15 1 MeV neq cm-2 . Charge collection measurements carried out with radioactive sources have proven the functioning of this technology up to these particle fluences. First results from beam test data with a 120 GeV/c pion beam at the CERN-SPS are also discussed, demonstrating a high tracking efficiency of (98.6 \pm 0.3)% and a high collected charge of about 10 ke for a device irradiated at the maximum fluence and biased at 1 kV.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Planar Pixel Sensors for the ATLAS Upgrade: Beam Tests results

Results of beam tests with planar silicon pixel sensors aimed towards the ATLAS Insertable B-Layer and High Luminosity LHC (HL-LHC) upgrades are presented. Measurements include spatial resolution, charge collection performance and charge sharing between neighbouring cells as a function of track incidence angle for different bulk materials. Measurements of n-in-n pixel sensors are presented as a function of fluence for different irradiations. Furthermore p-type silicon sensors from several vendors with slightly differing layouts were tested. All tested sensors were connected by bump-bonding to the ATLAS Pixel read-out chip. We show that both n-type and p-type tested planar sensors are able to collect significant charge even after integrated fluences expected at HL-LHC.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Test Beam Results of 3D Silicon Pixel Sensors for the ATLAS upgrade

Results on beam tests of 3D silicon pixel sensors aimed at the ATLAS Insertable-B-Layer and High Luminosity LHC (HL-LHC)) upgrades are presented. Measurements include charge collection, tracking efficiency and charge sharing between pixel cells, as a function of track incident angle, and were performed with and without a 1.6 T magnetic field oriented as the ATLAS Inner Detector solenoid field. Sensors were bump bonded to the front-end chip currently used in the ATLAS pixel detector. Full 3D sensors, with electrodes penetrating through the entire wafer thickness and active edge, and double-sided 3D sensors with partially overlapping bias and read-out electrodes were tested and showed comparable performance.

0 citations0 reviewsNo code linkedOpen access