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Researcher profile

C. Feuillet-Palma

C. Feuillet-Palma contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.supr-concond-mat.str-elcond-mat.mes-hall

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Published work

4 published item(s)

preprint2015arXiv

Field-effect control of superconductivity and Rashba spin-orbit coupling in top-gated LaAlO3/SrTiO3 devices

The recent development in the fabrication of artificial oxide heterostructures opens new avenues in the field of quantum materials by enabling the manipulation of the charge, spin and orbital degrees of freedom. In this context, the discovery of two-dimensional electron gases (2-DEGs) at LAlO3/SrTiO3 interfaces, which exhibit both superconductivity and strong Rashba spin-orbit coupling (SOC), represents a major breakthrough. Here, we report on the realisation of a field-effect LaAlO3/SrTiO3 device, whose physical properties, including superconductivity and SOC, can be tuned over a wide range by a top-gate voltage. We derive a phase diagram, which emphasises a field-effect-induced superconductor-to-insulator quantum phase transition. Magneto-transport measurements indicate that the Rashba coupling constant increases linearly with electrostatic doping. Our results pave the way for the realisation of mesoscopic devices, where these two properties can be manipulated on a local scale by means of top-gates.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Irreversibility and time relaxation in electrostatic doping of oxide interfaces

Two-dimensional electron gas (2DEG) confined in quantum wells at insulating oxide interfaces have attracted much attention as their electronic properties display a rich physics with various electronics orders such as superconductivity and magnetism. A particularly exciting features of these hetero-structures lies in the possibility to control their electronic properties by electrostatic gating, opening up new opportunities for the development of oxide based electronics. However, unexplained gating hysteresis and time relaxation of the 2DEG resistivity have been reported in some bias range, raising the question of the precise role of the gate voltage. Here we show that in LaTiO3/SrTiO3 and LaAlO3/SrTiO3 heterostructures, above a filling threshold, electrons irreversibly escape out of the well. This mechanism, which is directly responsible for the hysteresis and time relaxation, can be entirely described by a simple analytical model derived in this letter. Our results highlight the crucial role of the gate voltage both on the shape and the filling of the quantum well. They also demonstrate that it is possible to achieve a low-carrier density regime in a semiconductor limit, whereas the high-carrier density regime is intrinsically limited.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Multiple Quantum Phase Transitions at the superconducting LaTiO3/SrTiO3 interface

We study the magnetic field driven Quantum Phase Transition (QPT) in electrostatically gated superconducting LaTiO3/SrTiO3 interfaces. Through finite size scaling analysis, we show that it belongs to the (2+1)D XY model universality class. The system can be described as a disordered array of superconducting islands coupled by a two dimensional electron gas (2DEG). Depending on the 2DEG conductance tuned by the gate voltage, the QPT is single (corresponding to the long range phase coherence in the whole array) or double (one related to local phase coherence, the other one to the array). By retrieving the coherence length critical exponent ν, we show that the QPT can be "clean" or "dirty" according to the Harris criteria, depending on whether the phase coherence length is smaller or larger than the island size. The overall behaviour is well described by a theoretical approach of Spivak et al., in the framework of the fermionic scenario of 2D superconducting QPT.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Conserved spin and orbital phase along carbon nanotubes connected with multiple ferromagnetic contacts

We report on spin dependent transport measurements in carbon nanotubes based multi-terminal circuits. We observe a gate-controlled spin signal in non-local voltages and an anomalous conductance spin signal, which reveal that both the spin and the orbital phase can be conserved along carbon nanotubes with multiple ferromagnetic contacts. This paves the way for spintronics devices exploiting both these quantum mechanical degrees of freedom on the same footing.

0 citations0 reviewsNo code linkedOpen access