Source author record

C. DeVault

C. DeVault appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

physics.optics

Catalog footprint

What is connected

2works

1topics

4close collaborators

Actions

Connect this record

Open graph Browse works

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

preprint2019arXiv

Negative refraction in time-varying, strongly-coupled plasmonic antenna-ENZ systems

Time-varying metasurfaces are emerging as a powerful instrument for the dynamical control of the electromagnetic properties of a propagating wave. Here we demonstrate an efficient time-varying metasurface based on plasmonic nano-antennas strongly coupled to an epsilon-near-zero (ENZ) deeply sub-wavelength film. The plasmonic resonance of the metal resonators strongly interacts with the optical ENZ modes, providing a Rabi level spitting of ~30%. Optical pumping at frequency ω induces a nonlinear polarisation oscillating at 2ω responsible for an efficient generation of a phase conjugate and a negative refracted beam with a conversion efficiency that is more than four orders of magnitude greater compared to the bare ENZ film. The introduction of a strongly coupled plasmonic system therefore provides a simple and effective route towards the implementation of ENZ physics at the nanoscale

preprint2015arXiv

Epsilon-Near-Zero Al-Doped ZnO for Ultrafast Switching at Telecom Wavelengths: Outpacing the Traditional Amplitude-Bandwidth Trade-Off

Transparent conducting oxides have recently gained great attention as CMOS-compatible materials for applications in nanophotonics due to their low optical loss, metal-like behavior, versatile/tailorable optical properties, and established fabrication procedures. In particular, aluminum doped zinc oxide (AZO) is very attractive because its dielectric permittivity can be engineered over a broad range in the near infrared and infrared. However, despite all these beneficial features, the slow (> 100 ps) electron-hole recombination time typical of these compounds still represents a fundamental limitation impeding ultrafast optical modulation. Here we report the first epsilon-near-zero AZO thin films which simultaneously exhibit ultra-fast carrier dynamics (excitation and recombination time below 1 ps) and an outstanding reflectance modulation up to 40% for very low pump fluence levels (< 4 mJ/cm2) at the telecom wavelength of 1.3 μm. The unique properties of the demonstrated AZO thin films are the result of a low temperature fabrication procedure promoting oxygen vacancies and an ultra-high carrier concentration. As a proof-of-concept, an all-optical AZO-based plasmonic modulator achieving 3 dB modulation in 7.5 μm and operating at THz frequencies is numerically demonstrated. Our results overcome the traditional "modulation depth vs. speed" trade-off by at least an order of magnitude, placing AZO among the most promising compounds for tunable/switchable nanophotonics.